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Title: Study of silicon photomultiplier performance in external electric fields

Abstract

In this paper, we report on the performance of silicon photomultiplier (SiPM) light sensors operating in electric field strength up to 30 kV/cm and at a temperature of 149 K, relative to their performance in the absence of an external electric field. The SiPM devices used in this study show stable gain, photon detection efficiency, and rates of correlated pulses, when exposed to external fields, within the estimated uncertainties. No visible damage to the surface of the devices was caused by the exposure.

Authors:
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Publication Date:
Research Org.:
SLAC National Accelerator Lab., Menlo Park, CA (United States); Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States)
Sponsoring Org.:
USDOE
Contributing Org.:
nEXO collaboration
OSTI Identifier:
1475419
Alternate Identifier(s):
OSTI ID: 1525722
Report Number(s):
LLNL-JRNL-759457
Journal ID: ISSN 1748-0221
Grant/Contract Number:  
AC02-76SF00515; AC52-07NA27344
Resource Type:
Accepted Manuscript
Journal Name:
Journal of Instrumentation
Additional Journal Information:
Journal Volume: 13; Journal Issue: 09; Journal ID: ISSN 1748-0221
Publisher:
Institute of Physics (IOP)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; Cryogenic detectors; Photon detectors for UV; visible and IR photons (solid-state) (PIN diodes; APDs; Si-PMTs; G-APDs; CCDs; EBCCDs; EMCCDs etc); Double-beta decay detectors; Noble liquid detectors (scintillation, ionization, double-phase)

Citation Formats

Sun, X. L., Tolba, T., Cao, G. F., Lv, P., Wen, L. J., Odian, A., Vachon, F., Alamre, A., Albert, J. B., Anton, G., Arnquist, I. J., Badhrees, I., Barbeau, P. S., Beck, D., Belov, V., Bhatta, T., Bourque, F., Brodsky, J. P., Brown, E., Brunner, T., Burenkov, A., Cao, L., Cen, W. R., Chambers, C., Charlebois, S. A., Chiu, M., Cleveland, B., Coon, M., Côté, M., Craycraft, A., Cree, W., Dalmasson, J., Daniels, T., Darroch, L., Daugherty, S. J., Daughhetee, J., Delaquis, S., Mesrobian-Kabakian, A. Der, DeVoe, R., Dilling, J., Ding, Y. Y., Dolinski, M. J., Dragone, A., Echevers, J., Fabris, L., Fairbank, D., Fairbank, W., Farine, J., Feyzbakhsh, S., Fierlinger, P., Fontaine, R., Fudenberg, D., Gallina, G., Giacomini, G., Gornea, R., Gratta, G., Hansen, E. V., Harris, D., Heffner, M., Hoppe, E. W., Hößl, J., House, A., Hufschmidt, P., Hughes, M., Ito, Y., Iverson, A., Jamil, A., Jessiman, C., Jewell, M. J., Jiang, X. S., Karelin, A., Kaufman, L. J., Kodroff, D., Koffas, T., Kravitz, S., Krücken, R., Kuchenkov, A., Kumar, K. S., Lan, Y., Larson, A., Leonard, D. S., Li, G., Li, S., Li, Z., Licciardi, C., Lin, Y. H., MacLellan, R., Michel, T., Moe, M., Mong, B., Moore, D. C., Murray, K., Newby, R. J., Ning, Z., Njoya, O., Nolet, F., Nusair, O., Odgers, K., Oriunno, M., Orrell, J. L., Ortega, G. S., Ostrovskiy, I., Overman, C. T., Parent, S., Piepke, A., Pocar, A., Pratte, J. -F., Qiu, D., Radeka, V., Raguzin, E., Rao, T., Rescia, S., Retière, F., Robinson, A., Rossignol, T., Rowson, P. C., Roy, N., Saldanha, R., Sangiorgio, S., Schmidt, S., Schneider, J., Sinclair, D., VIII, K. Skarpaas, Soma, A. K., St-Hilaire, G., Stekhanov, V., Stiegler, T., Tarka, M., Todd, J., Totev, T. I., Tsang, R., Tsang, T., Veenstra, B., Veeraraghavan, V., Visser, G., Vuilleumier, J. -L., Wagenpfeil, M., Wang, Q., Watkins, J., Weber, M., Wei, W., Wichoski, U., Wrede, G., Wu, S. X., Wu, W. H., Xia, Q., Yang, L., Yen, Y. -R., Zeldovich, O., Zhao, J., Zhou, Y., and Ziegler, T. Study of silicon photomultiplier performance in external electric fields. United States: N. p., 2018. Web. doi:10.1088/1748-0221/13/09/t09006.
Sun, X. L., Tolba, T., Cao, G. F., Lv, P., Wen, L. J., Odian, A., Vachon, F., Alamre, A., Albert, J. B., Anton, G., Arnquist, I. J., Badhrees, I., Barbeau, P. S., Beck, D., Belov, V., Bhatta, T., Bourque, F., Brodsky, J. P., Brown, E., Brunner, T., Burenkov, A., Cao, L., Cen, W. R., Chambers, C., Charlebois, S. A., Chiu, M., Cleveland, B., Coon, M., Côté, M., Craycraft, A., Cree, W., Dalmasson, J., Daniels, T., Darroch, L., Daugherty, S. J., Daughhetee, J., Delaquis, S., Mesrobian-Kabakian, A. Der, DeVoe, R., Dilling, J., Ding, Y. Y., Dolinski, M. J., Dragone, A., Echevers, J., Fabris, L., Fairbank, D., Fairbank, W., Farine, J., Feyzbakhsh, S., Fierlinger, P., Fontaine, R., Fudenberg, D., Gallina, G., Giacomini, G., Gornea, R., Gratta, G., Hansen, E. V., Harris, D., Heffner, M., Hoppe, E. W., Hößl, J., House, A., Hufschmidt, P., Hughes, M., Ito, Y., Iverson, A., Jamil, A., Jessiman, C., Jewell, M. J., Jiang, X. S., Karelin, A., Kaufman, L. J., Kodroff, D., Koffas, T., Kravitz, S., Krücken, R., Kuchenkov, A., Kumar, K. S., Lan, Y., Larson, A., Leonard, D. S., Li, G., Li, S., Li, Z., Licciardi, C., Lin, Y. H., MacLellan, R., Michel, T., Moe, M., Mong, B., Moore, D. C., Murray, K., Newby, R. J., Ning, Z., Njoya, O., Nolet, F., Nusair, O., Odgers, K., Oriunno, M., Orrell, J. L., Ortega, G. S., Ostrovskiy, I., Overman, C. T., Parent, S., Piepke, A., Pocar, A., Pratte, J. -F., Qiu, D., Radeka, V., Raguzin, E., Rao, T., Rescia, S., Retière, F., Robinson, A., Rossignol, T., Rowson, P. C., Roy, N., Saldanha, R., Sangiorgio, S., Schmidt, S., Schneider, J., Sinclair, D., VIII, K. Skarpaas, Soma, A. K., St-Hilaire, G., Stekhanov, V., Stiegler, T., Tarka, M., Todd, J., Totev, T. I., Tsang, R., Tsang, T., Veenstra, B., Veeraraghavan, V., Visser, G., Vuilleumier, J. -L., Wagenpfeil, M., Wang, Q., Watkins, J., Weber, M., Wei, W., Wichoski, U., Wrede, G., Wu, S. X., Wu, W. H., Xia, Q., Yang, L., Yen, Y. -R., Zeldovich, O., Zhao, J., Zhou, Y., & Ziegler, T. Study of silicon photomultiplier performance in external electric fields. United States. doi:10.1088/1748-0221/13/09/t09006.
Sun, X. L., Tolba, T., Cao, G. F., Lv, P., Wen, L. J., Odian, A., Vachon, F., Alamre, A., Albert, J. B., Anton, G., Arnquist, I. J., Badhrees, I., Barbeau, P. S., Beck, D., Belov, V., Bhatta, T., Bourque, F., Brodsky, J. P., Brown, E., Brunner, T., Burenkov, A., Cao, L., Cen, W. R., Chambers, C., Charlebois, S. A., Chiu, M., Cleveland, B., Coon, M., Côté, M., Craycraft, A., Cree, W., Dalmasson, J., Daniels, T., Darroch, L., Daugherty, S. J., Daughhetee, J., Delaquis, S., Mesrobian-Kabakian, A. Der, DeVoe, R., Dilling, J., Ding, Y. Y., Dolinski, M. J., Dragone, A., Echevers, J., Fabris, L., Fairbank, D., Fairbank, W., Farine, J., Feyzbakhsh, S., Fierlinger, P., Fontaine, R., Fudenberg, D., Gallina, G., Giacomini, G., Gornea, R., Gratta, G., Hansen, E. V., Harris, D., Heffner, M., Hoppe, E. W., Hößl, J., House, A., Hufschmidt, P., Hughes, M., Ito, Y., Iverson, A., Jamil, A., Jessiman, C., Jewell, M. J., Jiang, X. S., Karelin, A., Kaufman, L. J., Kodroff, D., Koffas, T., Kravitz, S., Krücken, R., Kuchenkov, A., Kumar, K. S., Lan, Y., Larson, A., Leonard, D. S., Li, G., Li, S., Li, Z., Licciardi, C., Lin, Y. H., MacLellan, R., Michel, T., Moe, M., Mong, B., Moore, D. C., Murray, K., Newby, R. J., Ning, Z., Njoya, O., Nolet, F., Nusair, O., Odgers, K., Oriunno, M., Orrell, J. L., Ortega, G. S., Ostrovskiy, I., Overman, C. T., Parent, S., Piepke, A., Pocar, A., Pratte, J. -F., Qiu, D., Radeka, V., Raguzin, E., Rao, T., Rescia, S., Retière, F., Robinson, A., Rossignol, T., Rowson, P. C., Roy, N., Saldanha, R., Sangiorgio, S., Schmidt, S., Schneider, J., Sinclair, D., VIII, K. Skarpaas, Soma, A. K., St-Hilaire, G., Stekhanov, V., Stiegler, T., Tarka, M., Todd, J., Totev, T. I., Tsang, R., Tsang, T., Veenstra, B., Veeraraghavan, V., Visser, G., Vuilleumier, J. -L., Wagenpfeil, M., Wang, Q., Watkins, J., Weber, M., Wei, W., Wichoski, U., Wrede, G., Wu, S. X., Wu, W. H., Xia, Q., Yang, L., Yen, Y. -R., Zeldovich, O., Zhao, J., Zhou, Y., and Ziegler, T. Mon . "Study of silicon photomultiplier performance in external electric fields". United States. doi:10.1088/1748-0221/13/09/t09006. https://www.osti.gov/servlets/purl/1475419.
@article{osti_1475419,
title = {Study of silicon photomultiplier performance in external electric fields},
author = {Sun, X. L. and Tolba, T. and Cao, G. F. and Lv, P. and Wen, L. J. and Odian, A. and Vachon, F. and Alamre, A. and Albert, J. B. and Anton, G. and Arnquist, I. J. and Badhrees, I. and Barbeau, P. S. and Beck, D. and Belov, V. and Bhatta, T. and Bourque, F. and Brodsky, J. P. and Brown, E. and Brunner, T. and Burenkov, A. and Cao, L. and Cen, W. R. and Chambers, C. and Charlebois, S. A. and Chiu, M. and Cleveland, B. and Coon, M. and Côté, M. and Craycraft, A. and Cree, W. and Dalmasson, J. and Daniels, T. and Darroch, L. and Daugherty, S. J. and Daughhetee, J. and Delaquis, S. and Mesrobian-Kabakian, A. Der and DeVoe, R. and Dilling, J. and Ding, Y. Y. and Dolinski, M. J. and Dragone, A. and Echevers, J. and Fabris, L. and Fairbank, D. and Fairbank, W. and Farine, J. and Feyzbakhsh, S. and Fierlinger, P. and Fontaine, R. and Fudenberg, D. and Gallina, G. and Giacomini, G. and Gornea, R. and Gratta, G. and Hansen, E. V. and Harris, D. and Heffner, M. and Hoppe, E. W. and Hößl, J. and House, A. and Hufschmidt, P. and Hughes, M. and Ito, Y. and Iverson, A. and Jamil, A. and Jessiman, C. and Jewell, M. J. and Jiang, X. S. and Karelin, A. and Kaufman, L. J. and Kodroff, D. and Koffas, T. and Kravitz, S. and Krücken, R. and Kuchenkov, A. and Kumar, K. S. and Lan, Y. and Larson, A. and Leonard, D. S. and Li, G. and Li, S. and Li, Z. and Licciardi, C. and Lin, Y. H. and MacLellan, R. and Michel, T. and Moe, M. and Mong, B. and Moore, D. C. and Murray, K. and Newby, R. J. and Ning, Z. and Njoya, O. and Nolet, F. and Nusair, O. and Odgers, K. and Oriunno, M. and Orrell, J. L. and Ortega, G. S. and Ostrovskiy, I. and Overman, C. T. and Parent, S. and Piepke, A. and Pocar, A. and Pratte, J. -F. and Qiu, D. and Radeka, V. and Raguzin, E. and Rao, T. and Rescia, S. and Retière, F. and Robinson, A. and Rossignol, T. and Rowson, P. C. and Roy, N. and Saldanha, R. and Sangiorgio, S. and Schmidt, S. and Schneider, J. and Sinclair, D. and VIII, K. Skarpaas and Soma, A. K. and St-Hilaire, G. and Stekhanov, V. and Stiegler, T. and Tarka, M. and Todd, J. and Totev, T. I. and Tsang, R. and Tsang, T. and Veenstra, B. and Veeraraghavan, V. and Visser, G. and Vuilleumier, J. -L. and Wagenpfeil, M. and Wang, Q. and Watkins, J. and Weber, M. and Wei, W. and Wichoski, U. and Wrede, G. and Wu, S. X. and Wu, W. H. and Xia, Q. and Yang, L. and Yen, Y. -R. and Zeldovich, O. and Zhao, J. and Zhou, Y. and Ziegler, T.},
abstractNote = {In this paper, we report on the performance of silicon photomultiplier (SiPM) light sensors operating in electric field strength up to 30 kV/cm and at a temperature of 149 K, relative to their performance in the absence of an external electric field. The SiPM devices used in this study show stable gain, photon detection efficiency, and rates of correlated pulses, when exposed to external fields, within the estimated uncertainties. No visible damage to the surface of the devices was caused by the exposure.},
doi = {10.1088/1748-0221/13/09/t09006},
journal = {Journal of Instrumentation},
number = 09,
volume = 13,
place = {United States},
year = {2018},
month = {9}
}

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