Study of silicon photomultiplier performance in external electric fields

Journal Article · 17 September 2018 · Journal of Instrumentation

DOI: https://doi.org/10.1088/1748-0221/13/09/t09006 · OSTI ID:1475419

Sun, X. L.; Tolba, T.; Cao, G. F.; Lv, P.; Wen, L. J.; Odian, A.; Vachon, F.; Alamre, A.; Albert, J. B.; Anton, G.; Arnquist, I. J.; Badhrees, I.; Barbeau, P. S.; Beck, D.; Belov, V.; Bhatta, T.; Bourque, F.; Brodsky, J. P.; Brown, E.; Brunner, T. ; Burenkov, A.; Cao, L.; Cen, W. R.; Chambers, C.; Charlebois, S. A.; Chiu, M.; Cleveland, B.; Coon, M.; Côté, M.; Craycraft, A.; Cree, W.; Dalmasson, J.; Daniels, T.; Darroch, L.; Daugherty, S. J.; Daughhetee, J.; Delaquis, S.; Mesrobian-Kabakian, A. Der; DeVoe, R.; Dilling, J.; Ding, Y. Y.; Dolinski, M. J.; Dragone, A.; Echevers, J.; Fabris, L.; Fairbank, D.; Fairbank, W.; Farine, J.; Feyzbakhsh, S.; Fierlinger, P.; Fontaine, R.; Fudenberg, D.; Gallina, G.; Giacomini, G.; Gornea, R.; Gratta, G.; Hansen, E. V.; Harris, D.; Heffner, M.; Hoppe, E. W.; Hößl, J.; House, A.; Hufschmidt, P.; Hughes, M.; Ito, Y.; Iverson, A.; Jamil, A.; Jessiman, C.; Jewell, M. J.; Jiang, X. S.; Karelin, A.; Kaufman, L. J.; Kodroff, D.; Koffas, T.; Kravitz, S.; Krücken, R.; Kuchenkov, A.; Kumar, K. S.; Lan, Y.; Larson, A.; Leonard, D. S.; Li, G.; Li, S.; Li, Z.; Licciardi, C.; Lin, Y. H.; MacLellan, R.; Michel, T.; Moe, M.; Mong, B.; Moore, D. C.; Murray, K.; Newby, R. J.; Ning, Z.; Njoya, O.; Nolet, F.; Nusair, O.; Odgers, K.; Oriunno, M.; Orrell, J. L.; Ortega, G. S.; Ostrovskiy, I.; Overman, C. T.; Parent, S.; Piepke, A.; Pocar, A.; Pratte, J. -F.; Qiu, D.; Radeka, V.; Raguzin, E.; Rao, T.; Rescia, S.; Retière, F.; Robinson, A.; Rossignol, T.; Rowson, P. C.; Roy, N.; Saldanha, R.; Sangiorgio, S.; Schmidt, S.; Schneider, J.; Sinclair, D.; VIII, K. Skarpaas; Soma, A. K.; St-Hilaire, G.; Stekhanov, V.; Stiegler, T.; Tarka, M.; Todd, J.; Totev, T. I.; Tsang, R.; Tsang, T.; Veenstra, B.; Veeraraghavan, V.; Visser, G.; Vuilleumier, J. -L.; Wagenpfeil, M.; Wang, Q.; Watkins, J.; Weber, M.; Wei, W.; Wichoski, U.; Wrede, G.; Wu, S. X.; Wu, W. H.; Xia, Q.; Yang, L.; Yen, Y. -R.; Zeldovich, O.; Zhao, J.; Zhou, Y.; Ziegler, T.

In this paper, we report on the performance of silicon photomultiplier (SiPM) light sensors operating in electric field strength up to 30 kV/cm and at a temperature of 149 K, relative to their performance in the absence of an external electric field. The SiPM devices used in this study show stable gain, photon detection efficiency, and rates of correlated pulses, when exposed to external fields, within the estimated uncertainties. No visible damage to the surface of the devices was caused by the exposure.

• Research Organization: SLAC National Accelerator Laboratory (SLAC), Menlo Park, CA (United States); Lawrence Livermore National Laboratory (LLNL), Livermore, CA (United States)
• Sponsoring Organization: USDOE
• Contributing Organization: nEXO collaboration
• Grant/Contract Number: AC02-76SF00515; AC52-07NA27344
• OSTI ID: 1475419
• Alternate ID(s): OSTI ID: 1525722
• Report Number(s): LLNL-JRNL-759457
• Journal Information: Journal of Instrumentation, Vol. 13, Issue 09; ISSN 1748-0221
• Publisher: Institute of Physics (IOP)Copyright Statement
• Country of Publication: United States
• Language: English