Systematic Study on Aluminum Composition Nonuniformity in Aluminum Gallium Nitride Metal–Semiconductor–Metal Photodetectors

Zhao, Yiming; Donaldson, William Raymond

doi:10.1109/TED.2018.2862901

Title: Systematic Study on Aluminum Composition Nonuniformity in Aluminum Gallium Nitride Metal–Semiconductor–Metal Photodetectors

Abstract

Here, the influence of aluminum composition (Al%) nonuniformity on AlGaN metal–semiconductor–metal photodetectors was thoroughly studied on a device level. The Al% fluctuation was precisely measured by x-ray photoelectron spectroscopy and mapped by energy dispersive spectrometry; the dislocation density was investigated by x-ray diffraction rocking curve. Both theoretical simulation and experimental testing showed a significant difference in the responsivity, dark current, and decay time in the device with different Al%. The Al% fluctuation is also a likely cause of the long decay time of the device.

Authors:

^[1]; Donaldson, William Raymond ^[1]

Univ. of Rochester, Rochester, NY (United States). Lab. for Laser Energetics

Publication Date:: Thu Aug 16 00:00:00 EDT 2018

Research Org.:: Univ. of Rochester, NY (United States). Lab. for Laser Energetics

Sponsoring Org.:: USDOE National Nuclear Security Administration (NNSA)

Contributing Org.:: Laboratory for Laser Energetics, University of Rochester

OSTI Identifier:: 1474855

Report Number(s):: 2018-228, 1432
Journal ID: ISSN 0018-9383; 2017-228, 2390, 1432

Grant/Contract Number:: NA0001944

Resource Type:: Accepted Manuscript

Journal Name:: IEEE Transactions on Electron Devices

Additional Journal Information:: Journal Volume: 65; Journal Issue: 10; Journal ID: ISSN 0018-9383

Publisher:: IEEE

Country of Publication:: United States

Language:: English

Subject:: 36 MATERIALS SCIENCE; photodetector; compositional nonuniformity; aluminum gallium nitride; photoresponse

Citation Formats


                    Zhao, Yiming, and Donaldson, William Raymond. Systematic Study on Aluminum Composition Nonuniformity in Aluminum Gallium Nitride Metal–Semiconductor–Metal Photodetectors.  United States: N. p., 2018. 
Web.  doi:10.1109/TED.2018.2862901.

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                    Zhao, Yiming, & Donaldson, William Raymond. Systematic Study on Aluminum Composition Nonuniformity in Aluminum Gallium Nitride Metal–Semiconductor–Metal Photodetectors.  United States.  https://doi.org/10.1109/TED.2018.2862901

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                    Zhao, Yiming, and Donaldson, William Raymond. Thu .  
"Systematic Study on Aluminum Composition Nonuniformity in Aluminum Gallium Nitride Metal–Semiconductor–Metal Photodetectors".  United States.  https://doi.org/10.1109/TED.2018.2862901.  https://www.osti.gov/servlets/purl/1474855.

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@article{osti_1474855,

  title        = {Systematic Study on Aluminum Composition Nonuniformity in Aluminum Gallium Nitride Metal–Semiconductor–Metal Photodetectors},

  author       = {Zhao, Yiming and Donaldson, William Raymond},

  abstractNote = {Here, the influence of aluminum composition (Al%) nonuniformity on AlGaN metal–semiconductor–metal photodetectors was thoroughly studied on a device level. The Al% fluctuation was precisely measured by x-ray photoelectron spectroscopy and mapped by energy dispersive spectrometry; the dislocation density was investigated by x-ray diffraction rocking curve. Both theoretical simulation and experimental testing showed a significant difference in the responsivity, dark current, and decay time in the device with different Al%. The Al% fluctuation is also a likely cause of the long decay time of the device.},

  doi          = {10.1109/TED.2018.2862901},

  journal      = {IEEE Transactions on Electron Devices},

  number       = 10,

  volume       = 65,

  place        = {United States},

  year         = {Thu Aug 16 00:00:00 EDT 2018},

  month        = {Thu Aug 16 00:00:00 EDT 2018}

}

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Works referencing / citing this record:

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Response analysis on AlGaN metal–semiconductor–metal photodetectors in a perspective of experiment and theory and the persistent photoconductivity effect
journal, August 2018

Zhao, Yiming; Donaldson, William R.
Journal of Materials Research, Vol. 33, Issue 17
DOI: 10.1557/jmr.2018.297

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Title: Systematic Study on Aluminum Composition Nonuniformity in Aluminum Gallium Nitride Metal–Semiconductor–Metal Photodetectors

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