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Title: Accurate Quantification of Si/SiGe Interface Profiles via Atom Probe Tomography

Abstract

Pulsed laser atom probe tomography (APT) has enabled the investigation of semiconducting materials at sub-nm length scales and 10 ppm chemical sensitivity. This has enabled APT to be the best technique for nanoscale detection of dopant distributions and low levels of chemical segregation at interfaces, which are both important for semiconductor processing; however, the accuracy of measured interfacial profiles is typically compromised by aberrations. Interfacial profiles in APT data will vary with respect to different interfacial combinations, especially when the evaporation field between two materials is drastically different. Here, the ability of APT to measure SiGe/Si/SiGe interfacial profiles is tested with an 8 nm Si well embedded in SiGe. The APT measurements are compared to those measured using scanning transmission electron microscopy (STEM) to evaluate reconstruction and post-reconstruction processing methods to appropriately measure interfacial profiles using APT. Without post-APT reconstruction processing, the measured Si/SiGe interfacial widths between APT and STEM match poorly, but after applying the z-redistribution algorithm, the interfacial profiles are in good agreement. These results indicate that APT can be used to accurately identify SiGe/Si/SiGe interfacial profiles after application of the z-redistribution algorithm, which will greatly impact the synergy between growth and characterization of semiconductor devices using Si/SiGemore » interfaces.« less

Authors:
ORCiD logo [1]; ORCiD logo [1];  [2];  [2];  [2];  [2]; ORCiD logo [1]
  1. Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
  2. HRL Laboratories, LLC, Malibu, CA (United States)
Publication Date:
Research Org.:
Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1474844
Grant/Contract Number:  
AC05-00OR22725
Resource Type:
Accepted Manuscript
Journal Name:
Advanced Materials Interfaces
Additional Journal Information:
Journal Volume: 4; Journal Issue: 21; Journal ID: ISSN 2196-7350
Publisher:
Wiley-VCH
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; Si/SiGe; atom probe tomography; z-redistribution; scanning transmission electron microscopy; interfacial measurements

Citation Formats

Dyck, Ondrej E., Leonard, Donovan N., Edge, Lisa, Jackson, Clayton, Pritchett, Emily J., Deelman, Peter W., and Poplawsky, Jonathan D. Accurate Quantification of Si/SiGe Interface Profiles via Atom Probe Tomography. United States: N. p., 2017. Web. doi:10.1002/admi.201700622.
Dyck, Ondrej E., Leonard, Donovan N., Edge, Lisa, Jackson, Clayton, Pritchett, Emily J., Deelman, Peter W., & Poplawsky, Jonathan D. Accurate Quantification of Si/SiGe Interface Profiles via Atom Probe Tomography. United States. doi:10.1002/admi.201700622.
Dyck, Ondrej E., Leonard, Donovan N., Edge, Lisa, Jackson, Clayton, Pritchett, Emily J., Deelman, Peter W., and Poplawsky, Jonathan D. Fri . "Accurate Quantification of Si/SiGe Interface Profiles via Atom Probe Tomography". United States. doi:10.1002/admi.201700622. https://www.osti.gov/servlets/purl/1474844.
@article{osti_1474844,
title = {Accurate Quantification of Si/SiGe Interface Profiles via Atom Probe Tomography},
author = {Dyck, Ondrej E. and Leonard, Donovan N. and Edge, Lisa and Jackson, Clayton and Pritchett, Emily J. and Deelman, Peter W. and Poplawsky, Jonathan D.},
abstractNote = {Pulsed laser atom probe tomography (APT) has enabled the investigation of semiconducting materials at sub-nm length scales and 10 ppm chemical sensitivity. This has enabled APT to be the best technique for nanoscale detection of dopant distributions and low levels of chemical segregation at interfaces, which are both important for semiconductor processing; however, the accuracy of measured interfacial profiles is typically compromised by aberrations. Interfacial profiles in APT data will vary with respect to different interfacial combinations, especially when the evaporation field between two materials is drastically different. Here, the ability of APT to measure SiGe/Si/SiGe interfacial profiles is tested with an 8 nm Si well embedded in SiGe. The APT measurements are compared to those measured using scanning transmission electron microscopy (STEM) to evaluate reconstruction and post-reconstruction processing methods to appropriately measure interfacial profiles using APT. Without post-APT reconstruction processing, the measured Si/SiGe interfacial widths between APT and STEM match poorly, but after applying the z-redistribution algorithm, the interfacial profiles are in good agreement. These results indicate that APT can be used to accurately identify SiGe/Si/SiGe interfacial profiles after application of the z-redistribution algorithm, which will greatly impact the synergy between growth and characterization of semiconductor devices using Si/SiGe interfaces.},
doi = {10.1002/admi.201700622},
journal = {Advanced Materials Interfaces},
number = 21,
volume = 4,
place = {United States},
year = {2017},
month = {9}
}

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