High thermoelectricpower factor in graphene/hBN devices
Abstract
Fast and controllable cooling at nanoscales requires a combination of highly efficient passive cooling and active cooling. Although passive cooling in graphene-based devices is quite effective due to graphene’s extraordinary heat conduction, active cooling has not been considered feasible due to graphene’s low thermoelectric power factor. Here in this paper, we show that the thermoelectric performance of graphene can be significantly improved by using hexagonal boron nitride (hBN) substrates instead of SiO2. We find the room temperature efficiency of active cooling in the device, as gauged by the power factor times temperature, reaches values as high as 10.35 W·m-1·K-1, corresponding to more than doubling the highest reported room temperature bulk power factors, 5 W·m-1·K-1, in YbAl3, and quadrupling the best 2D power factor, 2.5W·m-1·K-1, in MoS2. We further show that the Seebeck coefficient provides a direct measure of substrate-induced random potential fluctuations and that their significant reduction for hBN substrates enables fast gate-controlled switching of the Seebeck coefficient polarity for applications in integrated active cooling devices.
- Authors:
- Publication Date:
- Research Org.:
- Rutgers Univ., New Brunswick, NJ (United States)
- Sponsoring Org.:
- USDOE; National Science Foundation (NSF)
- OSTI Identifier:
- 1333424
- Alternate Identifier(s):
- OSTI ID: 1474326
- Grant/Contract Number:
- FG02-99ER45742.; FG02-99ER45742; FA9550-14-1-0316; DMR 1207108
- Resource Type:
- Published Article
- Journal Name:
- Proceedings of the National Academy of Sciences of the United States of America
- Additional Journal Information:
- Journal Name: Proceedings of the National Academy of Sciences of the United States of America Journal Volume: 113 Journal Issue: 50; Journal ID: ISSN 0027-8424
- Publisher:
- National Academy of Sciences, Washington, DC (United States)
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE; graphene; Seebeck coefficient; thermoelectric power factor; electron–hole puddles; screened Coulomb scattering
Citation Formats
Duan, Junxi, Wang, Xiaoming, Lai, Xinyuan, Li, Guohong, Watanabe, Kenji, Taniguchi, Takashi, Zebarjadi, Mona, and Andrei, Eva Y. High thermoelectricpower factor in graphene/hBN devices. United States: N. p., 2016.
Web. doi:10.1073/pnas.1615913113.
Duan, Junxi, Wang, Xiaoming, Lai, Xinyuan, Li, Guohong, Watanabe, Kenji, Taniguchi, Takashi, Zebarjadi, Mona, & Andrei, Eva Y. High thermoelectricpower factor in graphene/hBN devices. United States. https://doi.org/10.1073/pnas.1615913113
Duan, Junxi, Wang, Xiaoming, Lai, Xinyuan, Li, Guohong, Watanabe, Kenji, Taniguchi, Takashi, Zebarjadi, Mona, and Andrei, Eva Y. Wed .
"High thermoelectricpower factor in graphene/hBN devices". United States. https://doi.org/10.1073/pnas.1615913113.
@article{osti_1333424,
title = {High thermoelectricpower factor in graphene/hBN devices},
author = {Duan, Junxi and Wang, Xiaoming and Lai, Xinyuan and Li, Guohong and Watanabe, Kenji and Taniguchi, Takashi and Zebarjadi, Mona and Andrei, Eva Y.},
abstractNote = {Fast and controllable cooling at nanoscales requires a combination of highly efficient passive cooling and active cooling. Although passive cooling in graphene-based devices is quite effective due to graphene’s extraordinary heat conduction, active cooling has not been considered feasible due to graphene’s low thermoelectric power factor. Here in this paper, we show that the thermoelectric performance of graphene can be significantly improved by using hexagonal boron nitride (hBN) substrates instead of SiO2. We find the room temperature efficiency of active cooling in the device, as gauged by the power factor times temperature, reaches values as high as 10.35 W·m-1·K-1, corresponding to more than doubling the highest reported room temperature bulk power factors, 5 W·m-1·K-1, in YbAl3, and quadrupling the best 2D power factor, 2.5W·m-1·K-1, in MoS2. We further show that the Seebeck coefficient provides a direct measure of substrate-induced random potential fluctuations and that their significant reduction for hBN substrates enables fast gate-controlled switching of the Seebeck coefficient polarity for applications in integrated active cooling devices.},
doi = {10.1073/pnas.1615913113},
journal = {Proceedings of the National Academy of Sciences of the United States of America},
number = 50,
volume = 113,
place = {United States},
year = {Wed Nov 23 00:00:00 EST 2016},
month = {Wed Nov 23 00:00:00 EST 2016}
}
https://doi.org/10.1073/pnas.1615913113
Web of Science
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