DOE PAGES title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: The high pressure phase transformation behavior of silicon nanowires

Abstract

Si nanowires of 80–150 nm and 200–250 nm diameter are pressurized up to 22 GPa using a diamond anvil cell. Raman and x-ray diffraction data were collected during both compression and decompression. Electron microscopy images reveal that the nanowires retain a nanowire-like morphology (after high pressure treatment). On compression, dc-Si was observed to persist at pressures up to 19 GPa compared to ~11 GPa for bulk-Si. On decompression, the metallic β-Sn phase was found to be more stable for Si nanowires compared with bulk-Si when lowering the pressure and was observed as low as 6 GPa. For the smallest nanowires studied (80–150 nm), predominately a-Si was obtained on decompression, whereas for larger nanowires (200–250 nm), clear evidence for the r8/bc8-Si phase was obtained. We suggest that the small volume of the individual Si nanowires compared with bulk-Si inhibits the nucleation of the r8-Si phase on decompression. This study shows that there is a size dependence in the high pressure behavior of Si nanowires during both compression and decompression.

Authors:
ORCiD logo [1]; ORCiD logo [2];  [1]; ORCiD logo [1]
  1. Australian National Univ., Canberra, ACT (Australia). Research School of Physics and Engineering
  2. Vienna Univ. of Technology (Austria). Inst. for Solid State Electronics
Publication Date:
Research Org.:
Argonne National Laboratory (ANL), Argonne, IL (United States). Advanced Photon Source (APS)
Sponsoring Org.:
USDOE Office of Science (SC)
OSTI Identifier:
1474160
Grant/Contract Number:  
AC02-06CH11357; FG02-99ER45775; NA0001974; EAR-1606856; EAR-1634415; FG02-94ER14466
Resource Type:
Accepted Manuscript
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 113; Journal Issue: 12; Journal ID: ISSN 0003-6951
Publisher:
American Institute of Physics (AIP)
Country of Publication:
United States
Language:
ENGLISH
Subject:
36 MATERIALS SCIENCE; Electron microscopy; Diamond anvil cells; Nanomaterials; Silicon; X-ray diffraction; Nanowires; Raman spectroscopy; Phase transitions

Citation Formats

Huston, L. Q., Lugstein, A., Williams, J. S., and Bradby, J. E. The high pressure phase transformation behavior of silicon nanowires. United States: N. p., 2018. Web. doi:10.1063/1.5048033.
Huston, L. Q., Lugstein, A., Williams, J. S., & Bradby, J. E. The high pressure phase transformation behavior of silicon nanowires. United States. https://doi.org/10.1063/1.5048033
Huston, L. Q., Lugstein, A., Williams, J. S., and Bradby, J. E. Wed . "The high pressure phase transformation behavior of silicon nanowires". United States. https://doi.org/10.1063/1.5048033. https://www.osti.gov/servlets/purl/1474160.
@article{osti_1474160,
title = {The high pressure phase transformation behavior of silicon nanowires},
author = {Huston, L. Q. and Lugstein, A. and Williams, J. S. and Bradby, J. E.},
abstractNote = {Si nanowires of 80–150 nm and 200–250 nm diameter are pressurized up to 22 GPa using a diamond anvil cell. Raman and x-ray diffraction data were collected during both compression and decompression. Electron microscopy images reveal that the nanowires retain a nanowire-like morphology (after high pressure treatment). On compression, dc-Si was observed to persist at pressures up to 19 GPa compared to ~11 GPa for bulk-Si. On decompression, the metallic β-Sn phase was found to be more stable for Si nanowires compared with bulk-Si when lowering the pressure and was observed as low as 6 GPa. For the smallest nanowires studied (80–150 nm), predominately a-Si was obtained on decompression, whereas for larger nanowires (200–250 nm), clear evidence for the r8/bc8-Si phase was obtained. We suggest that the small volume of the individual Si nanowires compared with bulk-Si inhibits the nucleation of the r8-Si phase on decompression. This study shows that there is a size dependence in the high pressure behavior of Si nanowires during both compression and decompression.},
doi = {10.1063/1.5048033},
journal = {Applied Physics Letters},
number = 12,
volume = 113,
place = {United States},
year = {Wed Sep 19 00:00:00 EDT 2018},
month = {Wed Sep 19 00:00:00 EDT 2018}
}

Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record

Citation Metrics:
Cited by: 8 works
Citation information provided by
Web of Science

Save / Share:

Works referenced in this record:

High pressure Raman scattering of silicon nanowires
journal, March 2011


Size-Dependent Amorphization of Nanoscale Y 2 O 3 at High Pressure
journal, August 2010


Temperature-dependent mechanical deformation of silicon at the nanoscale: Phase transformation versus defect propagation
journal, May 2015

  • Kiran, M. S. R. N.; Tran, T. T.; Smillie, L. A.
  • Journal of Applied Physics, Vol. 117, Issue 20
  • DOI: 10.1063/1.4921534

Vapor-liquid-solid mechanism of single crystal growth
journal, March 1964

  • Wagner, R. S.; Ellis, W. C.
  • Applied Physics Letters, Vol. 4, Issue 5, p. 89-90
  • DOI: 10.1063/1.1753975

Semiconductor nanowires
journal, October 2006


New high-pressure phase of Si
journal, April 1993


An Optical Fluorescence System for Quantitative Pressure Measurement in the Diamond‐Anvil Cell
journal, January 1973

  • Barnett, J. D.; Block, S.; Piermarini, G. J.
  • Review of Scientific Instruments, Vol. 44, Issue 1
  • DOI: 10.1063/1.1685943

Crystal data for high-pressure phases of silicon
journal, October 1986


Raman scattering in metallic Si and Ge up to 50 GPa
journal, April 1992


The wurtzite to rock salt structural transformation in CdSe nanocrystals under high pressure
journal, March 1995

  • Tolbert, Sarah H.; Alivisatos, A. P.
  • The Journal of Chemical Physics, Vol. 102, Issue 11
  • DOI: 10.1063/1.469512

Room temperature writing of electrically conductive and insulating zones in silicon by nanoindentation
journal, January 2011

  • Ruffell, S.; Sears, K.; Bradby, J. E.
  • Applied Physics Letters, Vol. 98, Issue 5
  • DOI: 10.1063/1.3549191

Cubic to Tetragonal Phase Transformation in Cold-Compressed Pd Nanocubes
journal, March 2008

  • Guo, Qixun; Zhao, Yusheng; Mao, Wendy L.
  • Nano Letters, Vol. 8, Issue 3
  • DOI: 10.1021/nl0731217

Mechanical deformation in silicon by micro-indentation
journal, May 2001

  • Bradby, J. E.; Williams, J. S.; Wong-Leung, J.
  • Journal of Materials Research, Vol. 16, Issue 5
  • DOI: 10.1557/JMR.2001.0209

High-pressure phases of group-IV, III–V, and II–VI compounds
journal, July 2003


Two New Forms of Silicon
journal, January 1963


Structure and properties of silicon XII: A complex tetrahedrally bonded phase
journal, August 1995


Effect of phase transformations on the shape of the unloading curve in the nanoindentation of silicon
journal, April 2000

  • Domnich, Vladislav; Gogotsi, Yury; Dub, Sergey
  • Applied Physics Letters, Vol. 76, Issue 16
  • DOI: 10.1063/1.126300

BC8 Silicon (Si-III) is a Narrow-Gap Semiconductor
journal, April 2017


Theoretical study of high-pressure orthorhombic silicon
journal, December 1993


Electronic Properties of Complex Crystalline and Amorphous Phases of Ge and Si. I. Density of States and Band Structures
journal, March 1973


Pressure dependence of the Imma phase of silicon
journal, July 1994


The crystal structures of new forms of silicon and germanium
journal, June 1964


Raman scattering in hydrogenated amorphous silicon under high pressure
journal, April 1982


Pressure-Induced Structural Transformations in Si Nanocrystals: Surface and Shape Effects
journal, June 1996


Pressure-Induced Structural Phase Transformations in Silicon Nanowires
journal, May 2005

  • Poswal, H. K.; Garg, Nandini; Sharma, Surinder M.
  • Journal of Nanoscience and Nanotechnology, Vol. 5, Issue 5
  • DOI: 10.1166/jnn.2005.109

Anomalous Piezoresistance Effect in Ultrastrained Silicon Nanowires
journal, August 2010

  • Lugstein, A.; Steinmair, M.; Steiger, A.
  • Nano Letters, Vol. 10, Issue 8
  • DOI: 10.1021/nl102179c

Ab initio study of the optical properties of Si-XII
journal, October 2008


Phase Transition and Compressibility in Silicon Nanowires
journal, September 2008

  • Wang, Yuejian; Zhang, Jianzhong; Wu, Ji
  • Nano Letters, Vol. 8, Issue 9, p. 2891-2895
  • DOI: 10.1021/nl8016576

Reversible pressure-induced structural transitions between metastable phases of silicon
journal, November 1994


Springer Handbook of Nanomaterials
book, January 2013


Crystal Structures at High Pressures of Metallic Modifications of Silicon and Germanium
journal, February 1963


Two New Forms of Silicon
journal, January 1963


Semiconductor Nanowires
journal, May 2007