The high pressure phase transformation behavior of silicon nanowires
Abstract
Si nanowires of 80–150 nm and 200–250 nm diameter are pressurized up to 22 GPa using a diamond anvil cell. Raman and x-ray diffraction data were collected during both compression and decompression. Electron microscopy images reveal that the nanowires retain a nanowire-like morphology (after high pressure treatment). On compression, dc-Si was observed to persist at pressures up to 19 GPa compared to ~11 GPa for bulk-Si. On decompression, the metallic β-Sn phase was found to be more stable for Si nanowires compared with bulk-Si when lowering the pressure and was observed as low as 6 GPa. For the smallest nanowires studied (80–150 nm), predominately a-Si was obtained on decompression, whereas for larger nanowires (200–250 nm), clear evidence for the r8/bc8-Si phase was obtained. We suggest that the small volume of the individual Si nanowires compared with bulk-Si inhibits the nucleation of the r8-Si phase on decompression. This study shows that there is a size dependence in the high pressure behavior of Si nanowires during both compression and decompression.
- Authors:
-
- Australian National Univ., Canberra, ACT (Australia). Research School of Physics and Engineering
- Vienna Univ. of Technology (Austria). Inst. for Solid State Electronics
- Publication Date:
- Research Org.:
- Argonne National Laboratory (ANL), Argonne, IL (United States). Advanced Photon Source (APS)
- Sponsoring Org.:
- USDOE Office of Science (SC)
- OSTI Identifier:
- 1474160
- Grant/Contract Number:
- AC02-06CH11357; FG02-99ER45775; NA0001974; EAR-1606856; EAR-1634415; FG02-94ER14466
- Resource Type:
- Accepted Manuscript
- Journal Name:
- Applied Physics Letters
- Additional Journal Information:
- Journal Volume: 113; Journal Issue: 12; Journal ID: ISSN 0003-6951
- Publisher:
- American Institute of Physics (AIP)
- Country of Publication:
- United States
- Language:
- ENGLISH
- Subject:
- 36 MATERIALS SCIENCE; Electron microscopy; Diamond anvil cells; Nanomaterials; Silicon; X-ray diffraction; Nanowires; Raman spectroscopy; Phase transitions
Citation Formats
Huston, L. Q., Lugstein, A., Williams, J. S., and Bradby, J. E. The high pressure phase transformation behavior of silicon nanowires. United States: N. p., 2018.
Web. doi:10.1063/1.5048033.
Huston, L. Q., Lugstein, A., Williams, J. S., & Bradby, J. E. The high pressure phase transformation behavior of silicon nanowires. United States. https://doi.org/10.1063/1.5048033
Huston, L. Q., Lugstein, A., Williams, J. S., and Bradby, J. E. Wed .
"The high pressure phase transformation behavior of silicon nanowires". United States. https://doi.org/10.1063/1.5048033. https://www.osti.gov/servlets/purl/1474160.
@article{osti_1474160,
title = {The high pressure phase transformation behavior of silicon nanowires},
author = {Huston, L. Q. and Lugstein, A. and Williams, J. S. and Bradby, J. E.},
abstractNote = {Si nanowires of 80–150 nm and 200–250 nm diameter are pressurized up to 22 GPa using a diamond anvil cell. Raman and x-ray diffraction data were collected during both compression and decompression. Electron microscopy images reveal that the nanowires retain a nanowire-like morphology (after high pressure treatment). On compression, dc-Si was observed to persist at pressures up to 19 GPa compared to ~11 GPa for bulk-Si. On decompression, the metallic β-Sn phase was found to be more stable for Si nanowires compared with bulk-Si when lowering the pressure and was observed as low as 6 GPa. For the smallest nanowires studied (80–150 nm), predominately a-Si was obtained on decompression, whereas for larger nanowires (200–250 nm), clear evidence for the r8/bc8-Si phase was obtained. We suggest that the small volume of the individual Si nanowires compared with bulk-Si inhibits the nucleation of the r8-Si phase on decompression. This study shows that there is a size dependence in the high pressure behavior of Si nanowires during both compression and decompression.},
doi = {10.1063/1.5048033},
journal = {Applied Physics Letters},
number = 12,
volume = 113,
place = {United States},
year = {Wed Sep 19 00:00:00 EDT 2018},
month = {Wed Sep 19 00:00:00 EDT 2018}
}
Web of Science
Works referenced in this record:
High pressure Raman scattering of silicon nanowires
journal, March 2011
- Khachadorian, Sevak; Papagelis, Konstantinos; Scheel, Harald
- Nanotechnology, Vol. 22, Issue 19
Size-Dependent Amorphization of Nanoscale at High Pressure
journal, August 2010
- Wang, Lin; Yang, Wenge; Ding, Yang
- Physical Review Letters, Vol. 105, Issue 9
Temperature-dependent mechanical deformation of silicon at the nanoscale: Phase transformation versus defect propagation
journal, May 2015
- Kiran, M. S. R. N.; Tran, T. T.; Smillie, L. A.
- Journal of Applied Physics, Vol. 117, Issue 20
Vapor-liquid-solid mechanism of single crystal growth
journal, March 1964
- Wagner, R. S.; Ellis, W. C.
- Applied Physics Letters, Vol. 4, Issue 5, p. 89-90
Semiconductor nanowires
journal, October 2006
- Lu, Wei; Lieber, Charles M.
- Journal of Physics D: Applied Physics, Vol. 39, Issue 21
New high-pressure phase of Si
journal, April 1993
- McMahon, M. I.; Nelmes, R. J.
- Physical Review B, Vol. 47, Issue 13
An Optical Fluorescence System for Quantitative Pressure Measurement in the Diamond‐Anvil Cell
journal, January 1973
- Barnett, J. D.; Block, S.; Piermarini, G. J.
- Review of Scientific Instruments, Vol. 44, Issue 1
Crystal data for high-pressure phases of silicon
journal, October 1986
- Hu, Jing Zhu; Merkle, Larry D.; Menoni, Carmen S.
- Physical Review B, Vol. 34, Issue 7
Raman scattering in metallic Si and Ge up to 50 GPa
journal, April 1992
- Olijnyk, Helmut
- Physical Review Letters, Vol. 68, Issue 14
The wurtzite to rock salt structural transformation in CdSe nanocrystals under high pressure
journal, March 1995
- Tolbert, Sarah H.; Alivisatos, A. P.
- The Journal of Chemical Physics, Vol. 102, Issue 11
Room temperature writing of electrically conductive and insulating zones in silicon by nanoindentation
journal, January 2011
- Ruffell, S.; Sears, K.; Bradby, J. E.
- Applied Physics Letters, Vol. 98, Issue 5
Cubic to Tetragonal Phase Transformation in Cold-Compressed Pd Nanocubes
journal, March 2008
- Guo, Qixun; Zhao, Yusheng; Mao, Wendy L.
- Nano Letters, Vol. 8, Issue 3
Mechanical deformation in silicon by micro-indentation
journal, May 2001
- Bradby, J. E.; Williams, J. S.; Wong-Leung, J.
- Journal of Materials Research, Vol. 16, Issue 5
High-pressure phases of group-IV, III–V, and II–VI compounds
journal, July 2003
- Mujica, A.; Rubio, Angel; Muñoz, A.
- Reviews of Modern Physics, Vol. 75, Issue 3
Two New Forms of Silicon
journal, January 1963
- Wentorf, R. H.; Kasper, J. S.
- Science, Vol. 139, Issue 3552
Structure and properties of silicon XII: A complex tetrahedrally bonded phase
journal, August 1995
- Piltz, R. O.; Maclean, J. R.; Clark, S. J.
- Physical Review B, Vol. 52, Issue 6
Effect of phase transformations on the shape of the unloading curve in the nanoindentation of silicon
journal, April 2000
- Domnich, Vladislav; Gogotsi, Yury; Dub, Sergey
- Applied Physics Letters, Vol. 76, Issue 16
BC8 Silicon (Si-III) is a Narrow-Gap Semiconductor
journal, April 2017
- Zhang, Haidong; Liu, Hanyu; Wei, Kaya
- Physical Review Letters, Vol. 118, Issue 14
Theoretical study of high-pressure orthorhombic silicon
journal, December 1993
- Lewis, Steven P.; Cohen, Marvin L.
- Physical Review B, Vol. 48, Issue 21
Electronic Properties of Complex Crystalline and Amorphous Phases of Ge and Si. I. Density of States and Band Structures
journal, March 1973
- Joannopoulos, J. D.; Cohen, Marvin L.
- Physical Review B, Vol. 7, Issue 6
Pressure dependence of the Imma phase of silicon
journal, July 1994
- McMahon, M. I.; Nelmes, R. J.; Wright, N. G.
- Physical Review B, Vol. 50, Issue 2
The crystal structures of new forms of silicon and germanium
journal, June 1964
- Kasper, J. S.; Richards, S. M.
- Acta Crystallographica, Vol. 17, Issue 6
Raman scattering in hydrogenated amorphous silicon under high pressure
journal, April 1982
- Ishidate, Takeo; Inoue, Kuon; Tsuji, Kazuhiko
- Solid State Communications, Vol. 42, Issue 3
Pressure-Induced Structural Transformations in Si Nanocrystals: Surface and Shape Effects
journal, June 1996
- Tolbert, Sarah H.; Herhold, Amy B.; Brus, Louis E.
- Physical Review Letters, Vol. 76, Issue 23
Pressure-Induced Structural Phase Transformations in Silicon Nanowires
journal, May 2005
- Poswal, H. K.; Garg, Nandini; Sharma, Surinder M.
- Journal of Nanoscience and Nanotechnology, Vol. 5, Issue 5
Anomalous Piezoresistance Effect in Ultrastrained Silicon Nanowires
journal, August 2010
- Lugstein, A.; Steinmair, M.; Steiger, A.
- Nano Letters, Vol. 10, Issue 8
Ab initio study of the optical properties of Si-XII
journal, October 2008
- Malone, Brad D.; Sau, Jay D.; Cohen, Marvin L.
- Physical Review B, Vol. 78, Issue 16
Phase Transition and Compressibility in Silicon Nanowires
journal, September 2008
- Wang, Yuejian; Zhang, Jianzhong; Wu, Ji
- Nano Letters, Vol. 8, Issue 9, p. 2891-2895
Reversible pressure-induced structural transitions between metastable phases of silicon
journal, November 1994
- Crain, J.; Ackland, G. J.; Maclean, J. R.
- Physical Review B, Vol. 50, Issue 17
Crystal Structures at High Pressures of Metallic Modifications of Silicon and Germanium
journal, February 1963
- Jamieson, J. C.
- Science, Vol. 139, Issue 3556
Two New Forms of Silicon
journal, January 1963
- Wentorf, R. H.; Kasper, J. S.
- Science, Vol. 139, Issue 3552