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Title: Method for controlling stress gradients in PVD aluminum nitride

Abstract

In this study we describe a method for controlling both the residual stress and the through-thickness stress gradient of aluminum nitride (AlN) thin films using a multi-step deposition process that varies the applied radio frequency (RF) substrate bias. The relationship between the applied RF substrate bias and the AlN residual stress is characterized using AlN films grown on oxidized silicon substrates is determined using 100 nm–1.5 μm thick blanket AlN films that are deposited with 60–100 W applied RF biases; the stress-bias relationship is found to be well described using a power law relationship. Using this relationship, we develop a model for varying the RF bias in a series of discrete deposition steps such that each deposition step has zero average stress. The applied RF bias power in these steps is tailored to produce AlN films that have minimized both the residual stress and the film stress gradient. AlN cantilevers were patterned from films deposited using this technique, which show reduced curvature compared to those deposited using a single RF bias setting, indicating a reduction of the stress gradient in the films.

Authors:
ORCiD logo [1];  [1];  [1];  [1];  [1];  [1]
  1. Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Publication Date:
Research Org.:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sponsoring Org.:
USDOE National Nuclear Security Administration (NNSA)
OSTI Identifier:
1474127
Report Number(s):
[SAND-2018-8546J]
[Journal ID: ISSN 0960-1317; 666740]
Grant/Contract Number:  
[AC04-94AL85000]
Resource Type:
Accepted Manuscript
Journal Name:
Journal of Micromechanics and Microengineering. Structures, Devices and Systems
Additional Journal Information:
[ Journal Volume: 28; Journal Issue: 11]; Journal ID: ISSN 0960-1317
Publisher:
IOP Publishing
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; aluminum nitride; PVD; stress control; stress gradient

Citation Formats

Knisely, Katherine E., Hunt, Bram, Troelsen, Brian, Douglas, Erica, Griffin, Benjamin A., and Stevens, James E. Method for controlling stress gradients in PVD aluminum nitride. United States: N. p., 2018. Web. doi:10.1088/1361-6439/aad91a.
Knisely, Katherine E., Hunt, Bram, Troelsen, Brian, Douglas, Erica, Griffin, Benjamin A., & Stevens, James E. Method for controlling stress gradients in PVD aluminum nitride. United States. doi:10.1088/1361-6439/aad91a.
Knisely, Katherine E., Hunt, Bram, Troelsen, Brian, Douglas, Erica, Griffin, Benjamin A., and Stevens, James E. Mon . "Method for controlling stress gradients in PVD aluminum nitride". United States. doi:10.1088/1361-6439/aad91a. https://www.osti.gov/servlets/purl/1474127.
@article{osti_1474127,
title = {Method for controlling stress gradients in PVD aluminum nitride},
author = {Knisely, Katherine E. and Hunt, Bram and Troelsen, Brian and Douglas, Erica and Griffin, Benjamin A. and Stevens, James E.},
abstractNote = {In this study we describe a method for controlling both the residual stress and the through-thickness stress gradient of aluminum nitride (AlN) thin films using a multi-step deposition process that varies the applied radio frequency (RF) substrate bias. The relationship between the applied RF substrate bias and the AlN residual stress is characterized using AlN films grown on oxidized silicon substrates is determined using 100 nm–1.5 μm thick blanket AlN films that are deposited with 60–100 W applied RF biases; the stress-bias relationship is found to be well described using a power law relationship. Using this relationship, we develop a model for varying the RF bias in a series of discrete deposition steps such that each deposition step has zero average stress. The applied RF bias power in these steps is tailored to produce AlN films that have minimized both the residual stress and the film stress gradient. AlN cantilevers were patterned from films deposited using this technique, which show reduced curvature compared to those deposited using a single RF bias setting, indicating a reduction of the stress gradient in the films.},
doi = {10.1088/1361-6439/aad91a},
journal = {Journal of Micromechanics and Microengineering. Structures, Devices and Systems},
number = [11],
volume = [28],
place = {United States},
year = {2018},
month = {9}
}

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