Strain tuning of excitons in monolayer WSe2

Aslan, Ozgur Burak; Deng, Minda; Heinz, Tony F.

doi:10.1103/PhysRevB.98.115308

Title: Strain tuning of excitons in monolayer ${WSe}_{2}$

Journal Article · 14 September 2018 · Physical Review B

DOI: https://doi.org/10.1103/PhysRevB.98.115308 · OSTI ID:1474105

Aslan, Ozgur Burak ^[1]; Deng, Minda ^[2]; Heinz, Tony F. ^[2]

Stanford Univ., Stanford, CA (United States); SLAC National Accelerator Lab., Menlo Park, CA (United States); Stanford University
Stanford Univ., Stanford, CA (United States); SLAC National Accelerator Lab., Menlo Park, CA (United States)

Here, we investigate excitonic absorption and emission in monolayer (1L) WSe₂ under tensile strain. We observe a redshift of 100 meV in the A exciton energy and a decrease of 25 meV in its estimated binding energy under 2.1% strain. Surprisingly, the linewidth of the A exciton decreases by almost a factor of two under strain, from 42 to 24 meV at room temperature. We explain this effect as the result of suppression of phonon-mediated exciton scattering channels. We show that such a suppression results from the relative shift under strain of a secondary valley in the conduction band that is nearly degenerate with the K valley where the A exciton is formed.

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Research Organization:: Stanford Univ., Stanford, CA (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)

Grant/Contract Number:: AC02-76SF00515

OSTI ID:: 1474105

Alternate ID(s):: OSTI ID: 1562880; OSTI ID: 1474195

Journal Information:: Physical Review B, Journal Name: Physical Review B Journal Issue: 11 Vol. 98; ISSN 2469-9950; ISSN PRBMDO

Publisher:: American Physical Society (APS)Copyright Statement

Country of Publication:: United States

Language:: English

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Title: Strain tuning of excitons in monolayer WSe 2

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Title: Strain tuning of excitons in monolayer ${WSe}_{2}$