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Title: Room-Temperature Phototransistor with Negative Photoresponsivity of 108 A W-1 Using Fullerene-Sensitized Aligned Carbon Nanotubes

Journal Article · · Small

Detection of low intensity light down to a few photons requires photodetectors with high gain. In this paper, a new photodetector is reported based on C60-sensitized aligned carbon nanotube (CNT) transistors with an extremely high responsivity of 108 A W-1 (gain > 108) in the ultraviolet and visible range, and 720 A W-1 (gain = 940) in the infrared range. In contrast to most sensitized phototransistors that operate on the photogating effect, the new photodetector operates on the modulation of the electrons scattering in the CNTs, leading to negative photoconductivity. Comparison with similar photodetectors using random CNT networks shows the benefit of using aligned CNTs. Finally, at room temperature, the aligned CNT photodetectors are demonstrated to detect a few tens of photons per CNT.

Research Organization:
Sandia National Lab. (SNL-CA), Livermore, CA (United States)
Sponsoring Organization:
USDOE National Nuclear Security Administration (NNSA); Defense Advanced Research Projects Agency (DARPA) (United States)
Grant/Contract Number:
NA0003525
OSTI ID:
1474080
Report Number(s):
SAND--2018-10184J; 667943
Journal Information:
Small, Journal Name: Small Journal Issue: 42 Vol. 14; ISSN 1613-6810
Publisher:
WileyCopyright Statement
Country of Publication:
United States
Language:
English

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Visible- and solar-blind photodetectors using AlGaN high electron mobility transistors with a nanodot-based floating gate journal January 2019