Room-Temperature Phototransistor with Negative Photoresponsivity of 108 A W-1 Using Fullerene-Sensitized Aligned Carbon Nanotubes

Bergemann, Kevin; Léonard, François

doi:10.1002/smll.201802806

Title: Room-Temperature Phototransistor with Negative Photoresponsivity of 10⁸ A W^-1 Using Fullerene-Sensitized Aligned Carbon Nanotubes

Journal Article · 24 September 2018 · Small

DOI: https://doi.org/10.1002/smll.201802806 · OSTI ID:1474080

Bergemann, Kevin ^[1];

^[1]

Sandia National Lab. (SNL-CA), Livermore, CA (United States)

Detection of low intensity light down to a few photons requires photodetectors with high gain. In this paper, a new photodetector is reported based on C₆₀-sensitized aligned carbon nanotube (CNT) transistors with an extremely high responsivity of 10⁸ A W^-1 (gain > 10⁸) in the ultraviolet and visible range, and 720 A W^-1 (gain = 940) in the infrared range. In contrast to most sensitized phototransistors that operate on the photogating effect, the new photodetector operates on the modulation of the electrons scattering in the CNTs, leading to negative photoconductivity. Comparison with similar photodetectors using random CNT networks shows the benefit of using aligned CNTs. Finally, at room temperature, the aligned CNT photodetectors are demonstrated to detect a few tens of photons per CNT.

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Research Organization:: Sandia National Lab. (SNL-CA), Livermore, CA (United States)

Sponsoring Organization:: USDOE National Nuclear Security Administration (NNSA); Defense Advanced Research Projects Agency (DARPA) (United States)

Grant/Contract Number:: NA0003525

OSTI ID:: 1474080

Report Number(s):: SAND-2018-10184J; 667943

Journal Information:: Small, Vol. 14, Issue 42; ISSN 1613-6810

Publisher:: WileyCopyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 19 works

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