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Title: Room-Temperature Phototransistor with Negative Photoresponsivity of 108 A W-1 Using Fullerene-Sensitized Aligned Carbon Nanotubes

Abstract

Detection of low intensity light down to a few photons requires photodetectors with high gain. In this paper, a new photodetector is reported based on C60-sensitized aligned carbon nanotube (CNT) transistors with an extremely high responsivity of 108 A W-1 (gain > 108) in the ultraviolet and visible range, and 720 A W-1 (gain = 940) in the infrared range. In contrast to most sensitized phototransistors that operate on the photogating effect, the new photodetector operates on the modulation of the electrons scattering in the CNTs, leading to negative photoconductivity. Comparison with similar photodetectors using random CNT networks shows the benefit of using aligned CNTs. Finally, at room temperature, the aligned CNT photodetectors are demonstrated to detect a few tens of photons per CNT.

Authors:
 [1]; ORCiD logo [1]
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  1. Sandia National Lab. (SNL-CA), Livermore, CA (United States)
Publication Date:
Research Org.:
Sandia National Lab. (SNL-CA), Livermore, CA (United States)
Sponsoring Org.:
USDOE National Nuclear Security Administration (NNSA); Defense Advanced Research Projects Agency (DARPA) (United States)
OSTI Identifier:
1474080
Report Number(s):
SAND-2018-10184J
Journal ID: ISSN 1613-6810; 667943
Grant/Contract Number:  
NA0003525
Resource Type:
Accepted Manuscript
Journal Name:
Small
Additional Journal Information:
Journal Volume: 14; Journal Issue: 42; Journal ID: ISSN 1613-6810
Publisher:
Wiley
Country of Publication:
United States
Language:
English
Subject:
47 OTHER INSTRUMENTATION; carbon nanotube; fullerene; gain; photodetector

Citation Formats

Bergemann, Kevin, and Léonard, François. Room-Temperature Phototransistor with Negative Photoresponsivity of 108 A W-1 Using Fullerene-Sensitized Aligned Carbon Nanotubes. United States: N. p., 2018. Web. doi:10.1002/smll.201802806.
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Bergemann, Kevin, & Léonard, François. Room-Temperature Phototransistor with Negative Photoresponsivity of 108 A W-1 Using Fullerene-Sensitized Aligned Carbon Nanotubes. United States. https://doi.org/10.1002/smll.201802806
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Bergemann, Kevin, and Léonard, François. Mon . "Room-Temperature Phototransistor with Negative Photoresponsivity of 108 A W-1 Using Fullerene-Sensitized Aligned Carbon Nanotubes". United States. https://doi.org/10.1002/smll.201802806. https://www.osti.gov/servlets/purl/1474080.
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@article{osti_1474080,
title = {Room-Temperature Phototransistor with Negative Photoresponsivity of 108 A W-1 Using Fullerene-Sensitized Aligned Carbon Nanotubes},
author = {Bergemann, Kevin and Léonard, François},
abstractNote = {Detection of low intensity light down to a few photons requires photodetectors with high gain. In this paper, a new photodetector is reported based on C60-sensitized aligned carbon nanotube (CNT) transistors with an extremely high responsivity of 108 A W-1 (gain > 108) in the ultraviolet and visible range, and 720 A W-1 (gain = 940) in the infrared range. In contrast to most sensitized phototransistors that operate on the photogating effect, the new photodetector operates on the modulation of the electrons scattering in the CNTs, leading to negative photoconductivity. Comparison with similar photodetectors using random CNT networks shows the benefit of using aligned CNTs. Finally, at room temperature, the aligned CNT photodetectors are demonstrated to detect a few tens of photons per CNT.},
doi = {10.1002/smll.201802806},
journal = {Small},
number = 42,
volume = 14,
place = {United States},
year = {2018},
month = {9}
}
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Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record
https://doi.org/10.1002/smll.201802806
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Citation Metrics:
Cited by: 16 works
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Figures / Tables:

Figure 1 Figure 1: AFM of a 500 nm aligned CNT array device. Device channel is in the middle of the image with contacts on left and right. Inset: Schematic of device structure.
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    Works referencing / citing this record:

    Visible- and solar-blind photodetectors using AlGaN high electron mobility transistors with a nanodot-based floating gate
    journal, January 2019

    • Armstrong, Andrew M.; Klein, Brianna A.; Allerman, Andrew A.
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    • DOI: 10.1364/prj.7.000b24

    Direct measurement of the surface energy of single-walled carbon nanotubes through atomic force microscopy
    journal, August 2019

    • Li, Hu; Liu, Jiangwei; Papadakis, Raffaello
    • Journal of Applied Physics, Vol. 126, Issue 6
    • DOI: 10.1063/1.5108935

    Recent Progress in Organic Phototransistors: Semiconductor Materials, Device Structures and Optoelectronic Applications
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    Recent Progress in Organic Phototransistors: Semiconductor Materials, Device Structures and Optoelectronic Applications
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