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Title: Unified computational model of transport in metal-insulating oxide-metal systems

In this paper, a unified physics-based model of electron transport in metal-insulator-metal (MIM) systems is presented. In this model, transport through metal-oxide interfaces occurs by electron tunneling between the metal electrodes and oxide defect states. Transport in the oxide bulk is dominated by hopping, modeled as a series of tunneling events that alter the electron occupancy of defect states. Electron transport in the oxide conduction band is treated by the drift–diffusion formalism and defect chemistry reactions link all the various transport mechanisms. It is shown that the current-limiting effect of the interface band offsets is a function of the defect vacancy concentration. These results provide insight into the underlying physical mechanisms of leakage currents in oxide-based capacitors and steady-state electron transport in resistive random access memory (ReRAM) MIM devices. An explanation of ReRAM bipolar switching behavior based on these results is proposed.
Authors:
 [1] ;  [1] ;  [1] ;  [1] ;  [1] ;  [1]
  1. Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Publication Date:
Report Number(s):
SAND-201-9972J
Journal ID: ISSN 0947-8396; 667792
Grant/Contract Number:
NA0003525
Type:
Accepted Manuscript
Journal Name:
Applied Physics. A, Materials Science and Processing
Additional Journal Information:
Journal Volume: 124; Journal Issue: 4; Journal ID: ISSN 0947-8396
Publisher:
Springer
Research Org:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sponsoring Org:
USDOE National Nuclear Security Administration (NNSA); SNL Laboratory Directed Research and Development (LDRD) Program
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE
OSTI Identifier:
1473927

Tierney, B. D., Hjalmarson, H. P., Jacobs-Gedrim, R. B., Agarwal, Sapan, James, C. D., and Marinella, M. J.. Unified computational model of transport in metal-insulating oxide-metal systems. United States: N. p., Web. doi:10.1007/s00339-018-1632-3.
Tierney, B. D., Hjalmarson, H. P., Jacobs-Gedrim, R. B., Agarwal, Sapan, James, C. D., & Marinella, M. J.. Unified computational model of transport in metal-insulating oxide-metal systems. United States. doi:10.1007/s00339-018-1632-3.
Tierney, B. D., Hjalmarson, H. P., Jacobs-Gedrim, R. B., Agarwal, Sapan, James, C. D., and Marinella, M. J.. 2018. "Unified computational model of transport in metal-insulating oxide-metal systems". United States. doi:10.1007/s00339-018-1632-3.
@article{osti_1473927,
title = {Unified computational model of transport in metal-insulating oxide-metal systems},
author = {Tierney, B. D. and Hjalmarson, H. P. and Jacobs-Gedrim, R. B. and Agarwal, Sapan and James, C. D. and Marinella, M. J.},
abstractNote = {In this paper, a unified physics-based model of electron transport in metal-insulator-metal (MIM) systems is presented. In this model, transport through metal-oxide interfaces occurs by electron tunneling between the metal electrodes and oxide defect states. Transport in the oxide bulk is dominated by hopping, modeled as a series of tunneling events that alter the electron occupancy of defect states. Electron transport in the oxide conduction band is treated by the drift–diffusion formalism and defect chemistry reactions link all the various transport mechanisms. It is shown that the current-limiting effect of the interface band offsets is a function of the defect vacancy concentration. These results provide insight into the underlying physical mechanisms of leakage currents in oxide-based capacitors and steady-state electron transport in resistive random access memory (ReRAM) MIM devices. An explanation of ReRAM bipolar switching behavior based on these results is proposed.},
doi = {10.1007/s00339-018-1632-3},
journal = {Applied Physics. A, Materials Science and Processing},
number = 4,
volume = 124,
place = {United States},
year = {2018},
month = {3}
}

Works referenced in this record:

Isothermal Switching and Detailed Filament Evolution in Memristive Systems
journal, April 2014
  • Mickel, Patrick R.; Lohn, Andrew J.; James, Conrad D.
  • Advanced Materials, Vol. 26, Issue 26, p. 4486-4490
  • DOI: 10.1002/adma.201306182

A fast, high-endurance and scalable non-volatile memory device made from asymmetric Ta2O5−x/TaO2−x bilayer structures
journal, July 2011
  • Lee, Myoung-Jae; Lee, Chang Bum; Lee, Dongsoo
  • Nature Materials, Vol. 10, Issue 8, p. 625-630
  • DOI: 10.1038/nmat3070