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Title: Effects of a chirped bias voltage on ion energy distributions in inductively coupled plasma reactors

The metrics for controlling reactive fluxes to wafers for microelectronics processing are becoming more stringent as feature sizes continue to shrink. Recent strategies for controlling ion energy distributions to the wafer involve using several different frequencies and/or pulsed powers. Although effective, these strategies are often costly or present challenges in impedance matching. With the advent of matching schemes for wide band amplifiers, other strategies to customize ion energy distributions become available. In this study, we discuss results from a computational investigation of biasing substrates using chirped frequencies in high density, electronegative inductively coupled plasmas. Depending on the frequency range and chirp duration, the resulting ion energy distributions exhibit components sampled from the entire frequency range. However, the chirping process also produces transient shifts in the self-generated dc bias due to the reapportionment of displacement and conduction with frequency to balance the current in the system. Finally, the dynamics of the dc bias can also be leveraged towards customizing ion energy distributions.
Authors:
ORCiD logo [1] ;  [2]
  1. Univ. of Michigan, Ann Arbor, MI (United States). Dept. of Chemical Engineering
  2. Univ. of Michigan, Ann Arbor, MI (United States). Dept. of Electrical Engineering and Computer Science
Publication Date:
Grant/Contract Number:
SC0014132; PHY-1519117; CHE-1124724
Type:
Accepted Manuscript
Journal Name:
Journal of Applied Physics
Additional Journal Information:
Journal Volume: 122; Journal Issue: 8; Journal ID: ISSN 0021-8979
Publisher:
American Institute of Physics (AIP)
Research Org:
Univ. of Michigan, Ann Arbor, MI (United States)
Sponsoring Org:
USDOE Office of Science (SC), Fusion Energy Sciences (FES) (SC-24); National Science Foundation (NSF)
Country of Publication:
United States
Language:
English
Subject:
70 PLASMA PHYSICS AND FUSION TECHNOLOGY
OSTI Identifier:
1473911

Lanham, Steven J., and Kushner, Mark J.. Effects of a chirped bias voltage on ion energy distributions in inductively coupled plasma reactors. United States: N. p., Web. doi:10.1063/1.4993785.
Lanham, Steven J., & Kushner, Mark J.. Effects of a chirped bias voltage on ion energy distributions in inductively coupled plasma reactors. United States. doi:10.1063/1.4993785.
Lanham, Steven J., and Kushner, Mark J.. 2017. "Effects of a chirped bias voltage on ion energy distributions in inductively coupled plasma reactors". United States. doi:10.1063/1.4993785. https://www.osti.gov/servlets/purl/1473911.
@article{osti_1473911,
title = {Effects of a chirped bias voltage on ion energy distributions in inductively coupled plasma reactors},
author = {Lanham, Steven J. and Kushner, Mark J.},
abstractNote = {The metrics for controlling reactive fluxes to wafers for microelectronics processing are becoming more stringent as feature sizes continue to shrink. Recent strategies for controlling ion energy distributions to the wafer involve using several different frequencies and/or pulsed powers. Although effective, these strategies are often costly or present challenges in impedance matching. With the advent of matching schemes for wide band amplifiers, other strategies to customize ion energy distributions become available. In this study, we discuss results from a computational investigation of biasing substrates using chirped frequencies in high density, electronegative inductively coupled plasmas. Depending on the frequency range and chirp duration, the resulting ion energy distributions exhibit components sampled from the entire frequency range. However, the chirping process also produces transient shifts in the self-generated dc bias due to the reapportionment of displacement and conduction with frequency to balance the current in the system. Finally, the dynamics of the dc bias can also be leveraged towards customizing ion energy distributions.},
doi = {10.1063/1.4993785},
journal = {Journal of Applied Physics},
number = 8,
volume = 122,
place = {United States},
year = {2017},
month = {8}
}