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Title: Electrostatic tuning of magnetism at the conducting (111) (La 0.3Sr 0.7)(Al 0.65Ta 0.35)/SrTiO 3 interface

We present measurements of the low temperature electrical transport properties of the two dimensional carrier gas that forms at the interface of (111) (La 0.3Sr 0.7)(Al 0.65Ta 0.35)/SrTiO 3 as a function of applied back gate voltage, V g. As is found in (111) LaAlO 3/SrTiO 3 interfaces, the low-field Hall coefficient is electron-like but shows a sharp reduction in magnitude below V g~ 20 V, indicating the presence of hole-like carriers in the system. This same value of V g correlates approximately with the gate voltage below which the magnetoresistance evolves from nonhysteretic to hysteretic behavior at millikelvin temperatures, signaling the onset of magnetic order in the system. Finally, we believe our results can provide insight into the mechanism of magnetism in SrTiO 3 based systems.
Authors:
 [1] ;  [2] ; ORCiD logo [2] ;  [3] ; ORCiD logo [4] ;  [1]
  1. Northwestern Univ., Evanston, IL (United States). Dept. of Physics
  2. National Univ. of Singapore (Singapore). NUSNNI-Nanocore, and Dept. of Physics
  3. National Univ. of Singapore (Singapore). NUSNNI-Nanocore, and Dept. of Physics, and NUS Graduate School for Integrative Sciences and Engineering
  4. National Univ. of Singapore (Singapore). NUSNNI-Nanocore, Dept. of Physics, NUS Graduate School for Integrative Sciences and Engineering, Dept. of Electrical and Computer Engineering, and Dept. of Material Science and Engineering
Publication Date:
Grant/Contract Number:
FG02-06ER46346
Type:
Accepted Manuscript
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 111; Journal Issue: 8; Journal ID: ISSN 0003-6951
Publisher:
American Institute of Physics (AIP)
Research Org:
Northwestern Univ., Evanston, IL (United States)
Sponsoring Org:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; Quantum Hall Effect; Magnetic Ordering; Band Gap; Electronic Transport; Transition Metals; Transition Metal Oxides; Chemical Elements; Transport Properties; Electrostatics; Ferromagnetic Materials
OSTI Identifier:
1473860
Alternate Identifier(s):
OSTI ID: 1376916

Bal, V. V., Huang, Z., Han, K., Ariando, ., Venkatesan, T., and Chandrasekhar, V.. Electrostatic tuning of magnetism at the conducting (111) (La0.3Sr0.7)(Al 0.65Ta0.35)/SrTiO3 interface. United States: N. p., Web. doi:10.1063/1.4986912.
Bal, V. V., Huang, Z., Han, K., Ariando, ., Venkatesan, T., & Chandrasekhar, V.. Electrostatic tuning of magnetism at the conducting (111) (La0.3Sr0.7)(Al 0.65Ta0.35)/SrTiO3 interface. United States. doi:10.1063/1.4986912.
Bal, V. V., Huang, Z., Han, K., Ariando, ., Venkatesan, T., and Chandrasekhar, V.. 2017. "Electrostatic tuning of magnetism at the conducting (111) (La0.3Sr0.7)(Al 0.65Ta0.35)/SrTiO3 interface". United States. doi:10.1063/1.4986912. https://www.osti.gov/servlets/purl/1473860.
@article{osti_1473860,
title = {Electrostatic tuning of magnetism at the conducting (111) (La0.3Sr0.7)(Al 0.65Ta0.35)/SrTiO3 interface},
author = {Bal, V. V. and Huang, Z. and Han, K. and Ariando, . and Venkatesan, T. and Chandrasekhar, V.},
abstractNote = {We present measurements of the low temperature electrical transport properties of the two dimensional carrier gas that forms at the interface of (111) (La0.3Sr0.7)(Al0.65Ta0.35)/SrTiO3 as a function of applied back gate voltage, Vg. As is found in (111) LaAlO3/SrTiO3 interfaces, the low-field Hall coefficient is electron-like but shows a sharp reduction in magnitude below V g~ 20 V, indicating the presence of hole-like carriers in the system. This same value of Vg correlates approximately with the gate voltage below which the magnetoresistance evolves from nonhysteretic to hysteretic behavior at millikelvin temperatures, signaling the onset of magnetic order in the system. Finally, we believe our results can provide insight into the mechanism of magnetism in SrTiO3 based systems.},
doi = {10.1063/1.4986912},
journal = {Applied Physics Letters},
number = 8,
volume = 111,
place = {United States},
year = {2017},
month = {8}
}

Works referenced in this record:

Two-Dimensional Quantum Oscillations of the Conductance at LaAlO3/SrTiO3Interfaces
journal, December 2010

Coexistence of magnetic order and two-dimensional superconductivity at LaAlO3/SrTiO3 interfaces
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Magnetic effects at the interface between non-magnetic oxides
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Direct imaging of the coexistence of ferromagnetism and superconductivity at the LaAlO3/SrTiO3 interface
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