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Title: Electrostatic tuning of magnetism at the conducting (111) (La0.3Sr0.7)(Al 0.65Ta0.35)/SrTiO3 interface

Abstract

We present measurements of the low temperature electrical transport properties of the two dimensional carrier gas that forms at the interface of (111) (La0.3Sr0.7)(Al0.65Ta0.35)/SrTiO3 as a function of applied back gate voltage, Vg. As is found in (111) LaAlO3/SrTiO3 interfaces, the low-field Hall coefficient is electron-like but shows a sharp reduction in magnitude below V g~ 20 V, indicating the presence of hole-like carriers in the system. This same value of Vg correlates approximately with the gate voltage below which the magnetoresistance evolves from nonhysteretic to hysteretic behavior at millikelvin temperatures, signaling the onset of magnetic order in the system. Finally, we believe our results can provide insight into the mechanism of magnetism in SrTiO3 based systems.

Authors:
 [1];  [2]; ORCiD logo [2];  [3]; ORCiD logo [4];  [1]
+ Show Author Affiliations
  1. Northwestern Univ., Evanston, IL (United States). Dept. of Physics
  2. National Univ. of Singapore (Singapore). NUSNNI-Nanocore, and Dept. of Physics
  3. National Univ. of Singapore (Singapore). NUSNNI-Nanocore, and Dept. of Physics, and NUS Graduate School for Integrative Sciences and Engineering
  4. National Univ. of Singapore (Singapore). NUSNNI-Nanocore, Dept. of Physics, NUS Graduate School for Integrative Sciences and Engineering, Dept. of Electrical and Computer Engineering, and Dept. of Material Science and Engineering
Publication Date:
Research Org.:
Northwestern Univ., Evanston, IL (United States)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES)
OSTI Identifier:
1473860
Alternate Identifier(s):
OSTI ID: 1376916
Grant/Contract Number:  
FG02-06ER46346
Resource Type:
Accepted Manuscript
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 111; Journal Issue: 8; Journal ID: ISSN 0003-6951
Publisher:
American Institute of Physics (AIP)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; Quantum Hall Effect; Magnetic Ordering; Band Gap; Electronic Transport; Transition Metals; Transition Metal Oxides; Chemical Elements; Transport Properties; Electrostatics; Ferromagnetic Materials

Citation Formats

Bal, V. V., Huang, Z., Han, K., Ariando, ., Venkatesan, T., and Chandrasekhar, V. Electrostatic tuning of magnetism at the conducting (111) (La0.3Sr0.7)(Al 0.65Ta0.35)/SrTiO3 interface. United States: N. p., 2017. Web. doi:10.1063/1.4986912.
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Bal, V. V., Huang, Z., Han, K., Ariando, ., Venkatesan, T., & Chandrasekhar, V. Electrostatic tuning of magnetism at the conducting (111) (La0.3Sr0.7)(Al 0.65Ta0.35)/SrTiO3 interface. United States. https://doi.org/10.1063/1.4986912
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Bal, V. V., Huang, Z., Han, K., Ariando, ., Venkatesan, T., and Chandrasekhar, V. Mon . "Electrostatic tuning of magnetism at the conducting (111) (La0.3Sr0.7)(Al 0.65Ta0.35)/SrTiO3 interface". United States. https://doi.org/10.1063/1.4986912. https://www.osti.gov/servlets/purl/1473860.
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@article{osti_1473860,
title = {Electrostatic tuning of magnetism at the conducting (111) (La0.3Sr0.7)(Al 0.65Ta0.35)/SrTiO3 interface},
author = {Bal, V. V. and Huang, Z. and Han, K. and Ariando, . and Venkatesan, T. and Chandrasekhar, V.},
abstractNote = {We present measurements of the low temperature electrical transport properties of the two dimensional carrier gas that forms at the interface of (111) (La0.3Sr0.7)(Al0.65Ta0.35)/SrTiO3 as a function of applied back gate voltage, Vg. As is found in (111) LaAlO3/SrTiO3 interfaces, the low-field Hall coefficient is electron-like but shows a sharp reduction in magnitude below V g~ 20 V, indicating the presence of hole-like carriers in the system. This same value of Vg correlates approximately with the gate voltage below which the magnetoresistance evolves from nonhysteretic to hysteretic behavior at millikelvin temperatures, signaling the onset of magnetic order in the system. Finally, we believe our results can provide insight into the mechanism of magnetism in SrTiO3 based systems.},
doi = {10.1063/1.4986912},
journal = {Applied Physics Letters},
number = 8,
volume = 111,
place = {United States},
year = {Mon Aug 21 00:00:00 EDT 2017},
month = {Mon Aug 21 00:00:00 EDT 2017}
}
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https://doi.org/10.1063/1.4986912
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    Works referencing / citing this record:

    Interface Engineering and Emergent Phenomena in Oxide Heterostructures
    journal, August 2018

    The role of oxide interfaces in highly confined electronic and ionic conductors
    journal, January 2019

    • Christensen, Dennis V.; Chen, Yunzhong; Esposito, Vincenzo
    • APL Materials, Vol. 7, Issue 1
    • DOI: 10.1063/1.5052057
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