Low voltage induced reversible magnetoelectric coupling in Fe3O4 thin films for voltage tunable spintronic devices
Abstract
A giant ME coefficient of 368 Oe V −1 at 1.5 V with good reversibility can be effectively controlled by IL gating in Fe 3 O 4 , which could be used to design tunable spintronic devices.
- Authors:
-
[1];
[4];
[5];
[1]
- Xi'an Jiaotong Univ., Xi'an (China)
- Tsinghua Univ., Beijing (China)
- Argonne National Lab. (ANL), Lemont, IL (United States)
- Argonne National Lab. (ANL), Lemont, IL (United States); The Univ. of Chicago, Chicago, IL (United States)
- Simon Fraser Univ., Burnaby (Canada); Xi’an Jiaotong Univ., Xi'an (China)
- Publication Date:
- Research Org.:
- Argonne National Lab. (ANL), Argonne, IL (United States)
- Sponsoring Org.:
- USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22). Materials Sciences & Engineering Division; National Natural Science Foundation of China (NSFC); Fundamental Research Funds for the Central Universities; Natural Science and Engineering Research Council of Canada; USDOE
- OSTI Identifier:
- 1473683
- Alternate Identifier(s):
- OSTI ID: 1464662
- Grant/Contract Number:
- AC02-06CH11357
- Resource Type:
- Accepted Manuscript
- Journal Name:
- Materials Horizons
- Additional Journal Information:
- Journal Volume: 5; Journal Issue: 5; Journal ID: ISSN 2051-6347
- Publisher:
- Royal Society of Chemistry
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE; Magnetoelectric coupling; Voltage control of magnetism; ferromagnetic resonance; multiferroics; Ionic Liquid Gating
Citation Formats
Zhang, Le, Hou, Weixiao, Dong, Guohua, Zhou, Ziyao, Zhao, Shishun, Hu, Zhongqiang, Ren, Wei, Chen, Mingfeng, Nan, Ce -Wen, Ma, Jing, Zhou, Hua, Chen, Wei, Ye, Zuo -Guang, Jiang, Zhuang -De, and Liu, Ming. Low voltage induced reversible magnetoelectric coupling in Fe3O4 thin films for voltage tunable spintronic devices. United States: N. p., 2018.
Web. doi:10.1039/c8mh00763b.
Zhang, Le, Hou, Weixiao, Dong, Guohua, Zhou, Ziyao, Zhao, Shishun, Hu, Zhongqiang, Ren, Wei, Chen, Mingfeng, Nan, Ce -Wen, Ma, Jing, Zhou, Hua, Chen, Wei, Ye, Zuo -Guang, Jiang, Zhuang -De, & Liu, Ming. Low voltage induced reversible magnetoelectric coupling in Fe3O4 thin films for voltage tunable spintronic devices. United States. https://doi.org/10.1039/c8mh00763b
Zhang, Le, Hou, Weixiao, Dong, Guohua, Zhou, Ziyao, Zhao, Shishun, Hu, Zhongqiang, Ren, Wei, Chen, Mingfeng, Nan, Ce -Wen, Ma, Jing, Zhou, Hua, Chen, Wei, Ye, Zuo -Guang, Jiang, Zhuang -De, and Liu, Ming. Tue .
"Low voltage induced reversible magnetoelectric coupling in Fe3O4 thin films for voltage tunable spintronic devices". United States. https://doi.org/10.1039/c8mh00763b. https://www.osti.gov/servlets/purl/1473683.
@article{osti_1473683,
title = {Low voltage induced reversible magnetoelectric coupling in Fe3O4 thin films for voltage tunable spintronic devices},
author = {Zhang, Le and Hou, Weixiao and Dong, Guohua and Zhou, Ziyao and Zhao, Shishun and Hu, Zhongqiang and Ren, Wei and Chen, Mingfeng and Nan, Ce -Wen and Ma, Jing and Zhou, Hua and Chen, Wei and Ye, Zuo -Guang and Jiang, Zhuang -De and Liu, Ming},
abstractNote = {A giant ME coefficient of 368 Oe V −1 at 1.5 V with good reversibility can be effectively controlled by IL gating in Fe 3 O 4 , which could be used to design tunable spintronic devices.},
doi = {10.1039/c8mh00763b},
journal = {Materials Horizons},
number = 5,
volume = 5,
place = {United States},
year = {Tue Aug 07 00:00:00 EDT 2018},
month = {Tue Aug 07 00:00:00 EDT 2018}
}
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