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Title: The fabrication of nanoscale Bi2Te3/Sb2Te3 multilayer thin film-based thermoelectric power chips

Abstract

In this work, we report our method of fabricating nanoscale multilayered Bi2Te3/Sb2Te3 thin film-based integrated thermoelectric devices, and detail the voltage and power produced by the device. The multilayered Bi2Te3/Sb2Te3 thin film was grown via e-beam evaporation; it had 20 alternating Bi2Te3- and Sb2Te3-layers, each layer being 1.5 nm thick. We characterized the film using high-resolution transmission electron microscopy (HRTEM), revealing its excellent cross-sectional structure without any obvious interface defects. The Bi2Te3/Sb2Te3 multilayer films were investigated by synchrotron x-ray scattering. An integrated device including 128×256 thermoelectric elements was fabricated from the multilayered film. An open-circuit voltage of 51 mV and a maximum power of 21 nW were produced from this 30 nm-thick Bi2Te3/Sb2Te3 multilayer TE device. We found that the nanoscale multilayer structure significantly affects the voltage and power produced. Lastly, the fabrication of the integrated thermoelectric devices is compatible to that of generating standard integrated circuits (ICs), and is scalable for producing higher voltage and power, or achieving solid-state cooling for on-chip applications.

Authors:
ORCiD logo [1];  [2];  [3];  [1]
  1. Alabama A&M University, Normal, AL (United States). Department of Electrical Engineering
  2. Brookhaven National Lab. (BNL), Upton, NY (United States). Center for Functional Nanomaterials (CFN)
  3. Brookhaven National Lab. (BNL), Upton, NY (United States). National Synchrotron Light Source
Publication Date:
Research Org.:
Brookhaven National Lab. (BNL), Upton, NY (United States)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES)
OSTI Identifier:
1473637
Alternate Identifier(s):
OSTI ID: 1548227
Report Number(s):
BNL-209068-2018-JAAM
Journal ID: ISSN 0167-9317
Grant/Contract Number:  
SC0012704; AC02-98CH10886; SC00112704
Resource Type:
Accepted Manuscript
Journal Name:
Microelectronic Engineering
Additional Journal Information:
Journal Volume: 197; Journal Issue: C; Journal ID: ISSN 0167-9317
Publisher:
Elsevier
Country of Publication:
United States
Language:
English
Subject:
77 NANOSCIENCE AND NANOTECHNOLOGY; 36 MATERIALS SCIENCE; thin films; thermoelectric power; nanofabrication; Bi2Te3/Sb2Te3 multilayer thin films; Thermoelectric device; Microfabrication

Citation Formats

Xiao, Zhigang, Kisslinger, Kim, Dimasi, E., and Kimbrough, J. The fabrication of nanoscale Bi2Te3/Sb2Te3 multilayer thin film-based thermoelectric power chips. United States: N. p., 2018. Web. https://doi.org/10.1016/j.mee.2018.05.001.
Xiao, Zhigang, Kisslinger, Kim, Dimasi, E., & Kimbrough, J. The fabrication of nanoscale Bi2Te3/Sb2Te3 multilayer thin film-based thermoelectric power chips. United States. https://doi.org/10.1016/j.mee.2018.05.001
Xiao, Zhigang, Kisslinger, Kim, Dimasi, E., and Kimbrough, J. Mon . "The fabrication of nanoscale Bi2Te3/Sb2Te3 multilayer thin film-based thermoelectric power chips". United States. https://doi.org/10.1016/j.mee.2018.05.001. https://www.osti.gov/servlets/purl/1473637.
@article{osti_1473637,
title = {The fabrication of nanoscale Bi2Te3/Sb2Te3 multilayer thin film-based thermoelectric power chips},
author = {Xiao, Zhigang and Kisslinger, Kim and Dimasi, E. and Kimbrough, J.},
abstractNote = {In this work, we report our method of fabricating nanoscale multilayered Bi2Te3/Sb2Te3 thin film-based integrated thermoelectric devices, and detail the voltage and power produced by the device. The multilayered Bi2Te3/Sb2Te3 thin film was grown via e-beam evaporation; it had 20 alternating Bi2Te3- and Sb2Te3-layers, each layer being 1.5 nm thick. We characterized the film using high-resolution transmission electron microscopy (HRTEM), revealing its excellent cross-sectional structure without any obvious interface defects. The Bi2Te3/Sb2Te3 multilayer films were investigated by synchrotron x-ray scattering. An integrated device including 128×256 thermoelectric elements was fabricated from the multilayered film. An open-circuit voltage of 51 mV and a maximum power of 21 nW were produced from this 30 nm-thick Bi2Te3/Sb2Te3 multilayer TE device. We found that the nanoscale multilayer structure significantly affects the voltage and power produced. Lastly, the fabrication of the integrated thermoelectric devices is compatible to that of generating standard integrated circuits (ICs), and is scalable for producing higher voltage and power, or achieving solid-state cooling for on-chip applications.},
doi = {10.1016/j.mee.2018.05.001},
journal = {Microelectronic Engineering},
number = C,
volume = 197,
place = {United States},
year = {2018},
month = {5}
}

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Cited by: 1 work
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Figures / Tables:

Fig. 1 Fig. 1: (a) Working principle for an integrated TE device, wherein the Sb2Te3/Sb2Te3 multilayer (ML) TE elements are connected electrically in series, and thermally in parallel; (b) arrangement of TE elements in the TE devices; and, (c) picture of the fabricated TE device.

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Figures/Tables have been extracted from DOE-funded journal article accepted manuscripts.