Layer-resolved band bending at the n − SrTi O 3 ( 001 ) / p − Ge ( 001 ) interface

doi:10.1103/PhysRevMaterials.2.094602

Title: Layer-resolved band bending at the $n - SrTi O_{3} (001) / p - Ge (001)$ interface

Authors:: Du, Y.; Sushko, P. V.; Spurgeon, S. R.; Bowden, M. E.; Ablett, J. M.; Lee, T. -L.; Quackenbush, N. F.; Woicik, J. C.; Chambers, S. A.

Publication Date:: 2018-09-21

Sponsoring Org.:: USDOE

OSTI Identifier:: 1471803

Grant/Contract Number:: 10122

Resource Type:: Publisher's Accepted Manuscript

Journal Name:: Physical Review Materials

Additional Journal Information:: Journal Name: Physical Review Materials Journal Volume: 2 Journal Issue: 9; Journal ID: ISSN 2475-9953

Publisher:: American Physical Society

Country of Publication:: United States

Language:: English

Citation Formats


                    Du, Y., Sushko, P. V., Spurgeon, S. R., Bowden, M. E., Ablett, J. M., Lee, T. -L., Quackenbush, N. F., Woicik, J. C., and Chambers, S. A. Layer-resolved band bending at the n − SrTi O 3 ( 001 ) / p − Ge ( 001 ) interface.  United States: N. p., 2018. 
        Web.  doi:10.1103/PhysRevMaterials.2.094602.

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                    Du, Y., Sushko, P. V., Spurgeon, S. R., Bowden, M. E., Ablett, J. M., Lee, T. -L., Quackenbush, N. F., Woicik, J. C., & Chambers, S. A. Layer-resolved band bending at the n − SrTi O 3 ( 001 ) / p − Ge ( 001 ) interface.  United States.  doi:10.1103/PhysRevMaterials.2.094602.

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                    Du, Y., Sushko, P. V., Spurgeon, S. R., Bowden, M. E., Ablett, J. M., Lee, T. -L., Quackenbush, N. F., Woicik, J. C., and Chambers, S. A. Fri .  
        "Layer-resolved band bending at the n − SrTi O 3 ( 001 ) / p − Ge ( 001 ) interface".  United States.  doi:10.1103/PhysRevMaterials.2.094602.

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@article{osti_1471803,

  title        = {Layer-resolved band bending at the n − SrTi O 3 ( 001 ) / p − Ge ( 001 ) interface},

  author       = {Du, Y. and Sushko, P. V. and Spurgeon, S. R. and Bowden, M. E. and Ablett, J. M. and Lee, T. -L. and Quackenbush, N. F. and Woicik, J. C. and Chambers, S. A.},

  abstractNote = {},

  doi          = {10.1103/PhysRevMaterials.2.094602},

  journal      = {Physical Review Materials},

  number       = 9,

  volume       = 2,

  place        = {United States},

  year         = {2018},

  month        = {9}

}

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DOI: 10.1103/PhysRevMaterials.2.094602

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Works referenced in this record:

Projector augmented-wave method
journal, December 1994

Blöchl, P. E.
Physical Review B, Vol. 50, Issue 24, p. 17953-17979
DOI: 10.1103/PhysRevB.50.17953

Efficient iterative schemes for ab initio total-energy calculations using a plane-wave basis set
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Kresse, G.; Furthmüller, J.
Physical Review B, Vol. 54, Issue 16, p. 11169-11186
DOI: 10.1103/PhysRevB.54.11169

Ab initio molecular-dynamics simulation of the liquid-metal–amorphous-semiconductor transition in germanium
journal, May 1994

Kresse, G.; Hafner, J.
Physical Review B, Vol. 49, Issue 20, p. 14251-14269
DOI: 10.1103/PhysRevB.49.14251

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Title: Layer-resolved band bending at the n − SrTi O 3 ( 001 ) / p − Ge ( 001 ) interface

Citation Formats

Projector augmented-wave method journal, December 1994

Efficient iterative schemes for ab initio total-energy calculations using a plane-wave basis set journal, October 1996

Ab initio molecular-dynamics simulation of the liquid-metal–amorphous-semiconductor transition in germanium journal, May 1994

Title: Layer-resolved band bending at the $n - SrTi O_{3} (001) / p - Ge (001)$ interface

Projector augmented-wave method
journal, December 1994

Efficient iterative schemes for ab initio total-energy calculations using a plane-wave basis set
journal, October 1996

Ab initio molecular-dynamics simulation of the liquid-metal–amorphous-semiconductor transition in germanium
journal, May 1994