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Title: Gate-Induced Interfacial Superconductivity in 1T-SnSe2

Journal Article · · Nano Letters
 [1];  [1];  [2]; ORCiD logo [3];  [1];  [1];  [1];  [1];  [1];  [4];  [4];  [1];  [1]; ORCiD logo [4];  [1]; ORCiD logo [3];  [3];  [5]; ORCiD logo [1]
  1. Nanjing Univ. (China). National Lab. of Solid State Microstructures. School of Physics. Collaborative Innovation Center of Advanced Microstructures
  2. Nanjing Univ. (China). National Lab. of Solid State Microstructures. School of Physics. Collaborative Innovation Center of Advanced Microstructures; Southwest Univ. of Science and Technology, Mianyang (China). School of Material Science and Engineering
  3. Stanford Univ., CA (United States). Geballe Lab. for Advanced Materials; SLAC National Accelerator Lab., Menlo Park, CA (United States). Stanford Inst. for Materials and Energy Sciences
  4. Nanjing Univ. (China). College of Engineering and Applied Sciences
  5. Nanjing Univ. (China). National Lab. of Solid State Microstructures. School of Physics. Collaborative Innovation Center of Advanced Microstructures; Stanford Univ., CA (United States). Geballe Lab. for Advanced Materials; SLAC National Accelerator Lab., Menlo Park, CA (United States). Stanford Inst. for Materials and Energy Sciences

Layered metal chalcogenide materials provide a versatile platform to investigate emergent phenomena and two-dimensional (2D) superconductivity at/near the atomically thin limit. In particular, gate-induced interfacial superconductivity realized by the use of an electric-double-layer transistor (EDLT) has greatly extended the capability to electrically induce superconductivity in oxides, nitrides, and transition metal chalcogenides and enable one to explore new physics, such as the Ising pairing mechanism. Exploiting gate-induced superconductivity in various materials can provide us with additional platforms to understand emergent interfacial superconductivity. In this paper, we report the discovery of gate-induced 2D superconductivity in layered 1T-SnSe2, a typical member of the main-group metal dichalcogenide (MDC) family, using an EDLT gating geometry. A superconducting transition temperature Tc ≈ 3.9 K was demonstrated at the EDL interface. The 2D nature of the superconductivity therein was further confirmed based on (1) a 2D Tinkham description of the angle-dependent upper critical field Bc2, (2) the existence of a quantum creep state as well as a large ratio of the coherence length to the thickness of superconductivity. Interestingly, the in-plane Bc2 approaching zero temperature was found to be 2–3 times higher than the Pauli limit, which might be related to an electric field-modulated spin–orbit interaction. Finally, such results provide a new perspective to expand the material matrix available for gate-induced 2D superconductivity and the fundamental understanding of interfacial superconductivity.

Research Organization:
SLAC National Accelerator Lab., Menlo Park, CA (United States); Nanjing Univ. (China)
Sponsoring Organization:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22); National Key Basic Research Program of China; National Natural Science Foundation of China (NSFC); Fundamental Research Funds for the Central Universities (China); Collaborative Innovation Center of Advanced Microstructures (China)
Grant/Contract Number:
AC02-76SF00515
OSTI ID:
1471528
Journal Information:
Nano Letters, Journal Name: Nano Letters Journal Issue: 2 Vol. 18; ISSN 1530-6984
Publisher:
American Chemical SocietyCopyright Statement
Country of Publication:
United States
Language:
English

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Signature of quantum Griffiths singularity state in a layered quasi-one-dimensional superconductor journal November 2018
2D superconductivity and vortex dynamics in 1T-MoS2 journal December 2018
Superconductivity in Li-intercalated 1 T − SnSe 2 driven by electric field gating journal May 2019
Two-dimensional hole transport in ion-gated diamond surfaces: A brief review (Review article) journal November 2019
Ionic-liquid-gating setup for stable measurements and reduced electronic inhomogeneity at low temperatures journal October 2018
Electronic structure of SnSe 2 films grown by molecular beam epitaxy journal March 2019
High performance tin diselenide photodetectors dependent on thickness: a vertical graphene sandwiched device and interfacial mechanism journal January 2019
Ionic-liquid-gating setup for stable measurements and reduced electronic inhomogeneity at low temperatures text January 2018
Mapping multi-valley Lifshitz transitions induced by field-effect doping in strained MoS 2 nanolayers journal January 2019
2D superconductivity and vortex dynamics in 1T-MoS2 text January 2018
Spacing dependent and cation doping independent superconductivity in intercalated 1T 2D SnSe 2 journal September 2019
Gate‐Tunable Electrical Transport in Thin 2M‐WS 2 Flakes journal July 2019
Van der Waals SnSe 2(1− x ) S 2 x Alloys: Composition‐Dependent Bowing Coefficient and Electron–Phonon Interaction journal December 2019