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Title: Gate-Induced Interfacial Superconductivity in 1T-SnSe2

Abstract

Layered metal chalcogenide materials provide a versatile platform to investigate emergent phenomena and two-dimensional (2D) superconductivity at/near the atomically thin limit. In particular, gate-induced interfacial superconductivity realized by the use of an electric-double-layer transistor (EDLT) has greatly extended the capability to electrically induce superconductivity in oxides, nitrides, and transition metal chalcogenides and enable one to explore new physics, such as the Ising pairing mechanism. Exploiting gate-induced superconductivity in various materials can provide us with additional platforms to understand emergent interfacial superconductivity. In this paper, we report the discovery of gate-induced 2D superconductivity in layered 1T-SnSe2, a typical member of the main-group metal dichalcogenide (MDC) family, using an EDLT gating geometry. A superconducting transition temperature Tc ≈ 3.9 K was demonstrated at the EDL interface. The 2D nature of the superconductivity therein was further confirmed based on (1) a 2D Tinkham description of the angle-dependent upper critical field Bc2, (2) the existence of a quantum creep state as well as a large ratio of the coherence length to the thickness of superconductivity. Interestingly, the in-plane Bc2 approaching zero temperature was found to be 2–3 times higher than the Pauli limit, which might be related to an electric field-modulated spin–orbit interaction. Finally,more » such results provide a new perspective to expand the material matrix available for gate-induced 2D superconductivity and the fundamental understanding of interfacial superconductivity.« less

Authors:
 [1];  [1];  [2]; ORCiD logo [3];  [1];  [1];  [1];  [1];  [1];  [4];  [4];  [1];  [1]; ORCiD logo [4];  [1]; ORCiD logo [3];  [3];  [5]; ORCiD logo [1]
+ Show Author Affiliations
  1. Nanjing Univ. (China). National Lab. of Solid State Microstructures. School of Physics. Collaborative Innovation Center of Advanced Microstructures
  2. Nanjing Univ. (China). National Lab. of Solid State Microstructures. School of Physics. Collaborative Innovation Center of Advanced Microstructures; Southwest Univ. of Science and Technology, Mianyang (China). School of Material Science and Engineering
  3. Stanford Univ., CA (United States). Geballe Lab. for Advanced Materials; SLAC National Accelerator Lab., Menlo Park, CA (United States). Stanford Inst. for Materials and Energy Sciences
  4. Nanjing Univ. (China). College of Engineering and Applied Sciences
  5. Nanjing Univ. (China). National Lab. of Solid State Microstructures. School of Physics. Collaborative Innovation Center of Advanced Microstructures; Stanford Univ., CA (United States). Geballe Lab. for Advanced Materials; SLAC National Accelerator Lab., Menlo Park, CA (United States). Stanford Inst. for Materials and Energy Sciences
Publication Date:
Research Org.:
SLAC National Accelerator Lab., Menlo Park, CA (United States); Nanjing Univ. (China)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES); National Key Basic Research Program of China; National Natural Science Foundation of China (NNSFC); Fundamental Research Funds for the Central Universities (China); Collaborative Innovation Center of Advanced Microstructures (China)
OSTI Identifier:
1471528
Grant/Contract Number:  
AC02-76SF00515; 2015CB921600; 2013CBA01603; 61625402; 11374142; 61574076; 11474147
Resource Type:
Accepted Manuscript
Journal Name:
Nano Letters
Additional Journal Information:
Journal Volume: 18; Journal Issue: 2; Journal ID: ISSN 1530-6984
Publisher:
American Chemical Society
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; electric-double-layer transistor; interfacial superconductivity; metal dichalcogenides; SnSe2

Citation Formats

Zeng, Junwen, Liu, Erfu, Fu, Yajun, Chen, Zhuoyu, Pan, Chen, Wang, Chenyu, Wang, Miao, Wang, Yaojia, Xu, Kang, Cai, Songhua, Yan, Xingxu, Wang, Yu, Liu, Xiaowei, Wang, Peng, Liang, Shi-Jun, Cui, Yi, Hwang, Harold Y., Yuan, Hongtao, and Miao, Feng. Gate-Induced Interfacial Superconductivity in 1T-SnSe2. United States: N. p., 2018. Web. https://doi.org/10.1021/acs.nanolett.7b05157.
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Zeng, Junwen, Liu, Erfu, Fu, Yajun, Chen, Zhuoyu, Pan, Chen, Wang, Chenyu, Wang, Miao, Wang, Yaojia, Xu, Kang, Cai, Songhua, Yan, Xingxu, Wang, Yu, Liu, Xiaowei, Wang, Peng, Liang, Shi-Jun, Cui, Yi, Hwang, Harold Y., Yuan, Hongtao, & Miao, Feng. Gate-Induced Interfacial Superconductivity in 1T-SnSe2. United States. https://doi.org/10.1021/acs.nanolett.7b05157
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Zeng, Junwen, Liu, Erfu, Fu, Yajun, Chen, Zhuoyu, Pan, Chen, Wang, Chenyu, Wang, Miao, Wang, Yaojia, Xu, Kang, Cai, Songhua, Yan, Xingxu, Wang, Yu, Liu, Xiaowei, Wang, Peng, Liang, Shi-Jun, Cui, Yi, Hwang, Harold Y., Yuan, Hongtao, and Miao, Feng. Wed . "Gate-Induced Interfacial Superconductivity in 1T-SnSe2". United States. https://doi.org/10.1021/acs.nanolett.7b05157. https://www.osti.gov/servlets/purl/1471528.
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@article{osti_1471528,
title = {Gate-Induced Interfacial Superconductivity in 1T-SnSe2},
author = {Zeng, Junwen and Liu, Erfu and Fu, Yajun and Chen, Zhuoyu and Pan, Chen and Wang, Chenyu and Wang, Miao and Wang, Yaojia and Xu, Kang and Cai, Songhua and Yan, Xingxu and Wang, Yu and Liu, Xiaowei and Wang, Peng and Liang, Shi-Jun and Cui, Yi and Hwang, Harold Y. and Yuan, Hongtao and Miao, Feng},
abstractNote = {Layered metal chalcogenide materials provide a versatile platform to investigate emergent phenomena and two-dimensional (2D) superconductivity at/near the atomically thin limit. In particular, gate-induced interfacial superconductivity realized by the use of an electric-double-layer transistor (EDLT) has greatly extended the capability to electrically induce superconductivity in oxides, nitrides, and transition metal chalcogenides and enable one to explore new physics, such as the Ising pairing mechanism. Exploiting gate-induced superconductivity in various materials can provide us with additional platforms to understand emergent interfacial superconductivity. In this paper, we report the discovery of gate-induced 2D superconductivity in layered 1T-SnSe2, a typical member of the main-group metal dichalcogenide (MDC) family, using an EDLT gating geometry. A superconducting transition temperature Tc ≈ 3.9 K was demonstrated at the EDL interface. The 2D nature of the superconductivity therein was further confirmed based on (1) a 2D Tinkham description of the angle-dependent upper critical field Bc2, (2) the existence of a quantum creep state as well as a large ratio of the coherence length to the thickness of superconductivity. Interestingly, the in-plane Bc2 approaching zero temperature was found to be 2–3 times higher than the Pauli limit, which might be related to an electric field-modulated spin–orbit interaction. Finally, such results provide a new perspective to expand the material matrix available for gate-induced 2D superconductivity and the fundamental understanding of interfacial superconductivity.},
doi = {10.1021/acs.nanolett.7b05157},
journal = {Nano Letters},
number = 2,
volume = 18,
place = {United States},
year = {2018},
month = {1}
}
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https://doi.org/10.1021/acs.nanolett.7b05157
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Cited by: 14 works
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Figures / Tables:

Figure 1 Figure 1: Crystal structure of 1T-SnSe2, transfer curve, and superconductivity of SnSe2-EDLT. (a) The top and side views of the crystal structure. (b) Sketch of a SnSe2-EDLT device. (c) Optical microscope image of a typical multiterminal Hall bar device. The scale bar is 10 μm. (d–f) Transfer curve and superconductivitymore » of dev #01. (d) Isd as a function of sweeping VG with Vsd = 0.1 V. The inset shows the magnetic field dependence of Rxy at T = 5 K with VG = 5 V. (e) Temperature-dependent resistance between 2 and 160 K with VG = 5 V. A metal-to-superconductor transition occurs at Tc = 3.9 K. (f) Temperature dependence of the magnetoresistance. The measurements were carried out using an excitation current of 50 nA and varying out-of-plane magnetic fields up to 1 T under the same VG« less
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Works referenced in this record:

Superconducting Interfaces Between Insulating Oxides
journal, August 2007

Controlling many-body states by the electric-field effect in a two-dimensional material
journal, December 2015

  • Li, L. J.; O’Farrell, E. C. T.; Loh, K. P.
  • Nature, Vol. 529, Issue 7585
  • DOI: 10.1038/nature16175

Evidence for two-dimensional Ising superconductivity in gated MoS2
journal, November 2015

Superconducting Dome in a Gate-Tuned Band Insulator
journal, November 2012

Discovery of superconductivity in KTaO3 by electrostatic carrier doping
journal, May 2011

  • Ueno, K.; Nakamura, S.; Shimotani, H.
  • Nature Nanotechnology, Vol. 6, Issue 7
  • DOI: 10.1038/nnano.2011.78

The chemistry of two-dimensional layered transition metal dichalcogenide nanosheets
journal, April 2013

  • Chhowalla, Manish; Shin, Hyeon Suk; Eda, Goki
  • Nature Chemistry, Vol. 5, Issue 4, p. 263-275
  • DOI: 10.1038/nchem.1589

Atomically Thin MoS2 A New Direct-Gap Semiconductor
journal, September 2010

Electronic Structure of Host Lattices for Intercalation Compounds:  SnS 2 , SnSe 2 , ZrS 2 , and TaS 2
journal, November 1998

  • Ibarz, Anna; Ruiz, Eliseo; Alvarez, Santiago
  • Chemistry of Materials, Vol. 10, Issue 11
  • DOI: 10.1021/cm980704w

Electronic Energy-Band Structure of Sn S 2 and Sn Se 2
journal, April 1972

High electron mobility, quantum Hall effect and anomalous optical response in atomically thin InSe
journal, November 2016

  • Bandurin, Denis A.; Tyurnina, Anastasia V.; Yu, Geliang L.
  • Nature Nanotechnology, Vol. 12, Issue 3
  • DOI: 10.1038/nnano.2016.242

XPS and ESR of tin diselenide containing phosphorus cobaltocene [(SnSe2)-1%P{CoCp2}0.36]
journal, January 1992

Single-crystal conductivity study of the tin dichalcogenides SnS 2 –x Se x intercalated with cobaltocene
journal, January 1991

  • Formstone, Carl A.; Kurmoo, Mohamedally; FitzGerald, Emma T.
  • J. Mater. Chem., Vol. 1, Issue 1
  • DOI: 10.1039/JM9910100051

Theoretical study of the intercalation of cobaltocene in metal chalcogenides
journal, January 1998

  • Ibarz, Anna; Ruiz, Eliseo; Alvarez, Santiago
  • Journal of Materials Chemistry, Vol. 8, Issue 8
  • DOI: 10.1039/a802240b

Observation of Quantum Dissipation in the Vortex State of a Highly Disordered Superconducting Thin Film
journal, February 1996

The flux-line lattice in superconductors
journal, November 1995

A note on the Maximum Critical Field of High‐Field Superconductors
journal, September 1962

  • Chandrasekhar, B. S.
  • Applied Physics Letters, Vol. 1, Issue 1
  • DOI: 10.1063/1.1777362

Upper Limit for the Critical Field in Hard Superconductors
journal, September 1962

Ising pairing in superconducting NbSe2 atomic layers
journal, November 2015

  • Xi, Xiaoxiang; Wang, Zefang; Zhao, Weiwei
  • Nature Physics, Vol. 12, Issue 2
  • DOI: 10.1038/nphys3538

Intrinsic spin-orbit coupling in superconducting δ -doped SrTiO 3 heterostructures
journal, August 2012

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    Works referencing / citing this record:

    2D superconductivity and vortex dynamics in 1T-MoS2
    journal, December 2018

    • Sharma, Chithra H.; Surendran, Ananthu P.; Varma, Sangeeth S.
    • Communications Physics, Vol. 1, Issue 1
    • DOI: 10.1038/s42005-018-0091-7

    Superconductivity in Li-intercalated 1 T − SnSe 2 driven by electric field gating
    journal, May 2019

    Gate‐Tunable Electrical Transport in Thin 2M‐WS 2 Flakes
    journal, July 2019

    • Che, Xiangli; Deng, Yujun; Fang, Yuqiang
    • Advanced Electronic Materials, Vol. 5, Issue 10
    • DOI: 10.1002/aelm.201900462

    Signature of quantum Griffiths singularity state in a layered quasi-one-dimensional superconductor
    journal, November 2018

    Spacing dependent and cation doping independent superconductivity in intercalated 1T 2D SnSe 2
    journal, September 2019

    Ionic-liquid-gating setup for stable measurements and reduced electronic inhomogeneity at low temperatures
    journal, October 2018

    • Takahide, Yamaguchi; Sasama, Yosuke; Takeya, Hiroyuki
    • Review of Scientific Instruments, Vol. 89, Issue 10
    • DOI: 10.1063/1.5041936

    Van der Waals SnSe 2(1− x ) S 2 x Alloys: Composition‐Dependent Bowing Coefficient and Electron–Phonon Interaction
    journal, December 2019

    • Kudrynskyi, Zakhar R.; Wang, Xueting; Sutcliffe, Jake
    • Advanced Functional Materials, Vol. 30, Issue 9
    • DOI: 10.1002/adfm.201908092

    Mapping multi-valley Lifshitz transitions induced by field-effect doping in strained MoS 2 nanolayers
    journal, January 2019

    • Piatti, Erik; Romanin, Davide; Gonnelli, Renato S.
    • Journal of Physics: Condensed Matter, Vol. 31, Issue 11
    • DOI: 10.1088/1361-648x/aaf981

    Electronic structure of SnSe 2 films grown by molecular beam epitaxy
    journal, March 2019

    • Lochocki, Edward B.; Vishwanath, Suresh; Liu, Xinyu
    • Applied Physics Letters, Vol. 114, Issue 9
    • DOI: 10.1063/1.5084147

    Two-dimensional hole transport in ion-gated diamond surfaces: A brief review (Review article)
    journal, November 2019

    • Piatti, Erik; Romanin, Davide; Daghero, Dario
    • Low Temperature Physics, Vol. 45, Issue 11
    • DOI: 10.1063/10.0000122
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