Gate-Induced Interfacial Superconductivity in 1T-SnSe2

Zeng, Junwen; Liu, Erfu; Fu, Yajun; Chen, Zhuoyu; Pan, Chen; Wang, Chenyu; Wang, Miao; Wang, Yaojia; Xu, Kang; Cai, Songhua; Yan, Xingxu; Wang, Yu; Liu, Xiaowei; Wang, Peng; Liang, Shi-Jun; Cui, Yi; Hwang, Harold Y.; Yuan, Hongtao; Miao, Feng

doi:10.1021/acs.nanolett.7b05157

Title: Gate-Induced Interfacial Superconductivity in 1T-SnSe₂

Journal Article · 30 January 2018 · Nano Letters

DOI: https://doi.org/10.1021/acs.nanolett.7b05157 · OSTI ID:1471528

Zeng, Junwen ^[1]; Liu, Erfu ^[1]; Fu, Yajun ^[2];

^[3]; Pan, Chen ^[1]; Wang, Chenyu ^[1]; Wang, Miao ^[1]; Wang, Yaojia ^[1]; Xu, Kang ^[1]; Cai, Songhua ^[4]; Yan, Xingxu ^[4]; Wang, Yu ^[1]; Liu, Xiaowei ^[1];

^[4]; Liang, Shi-Jun ^[1];

^[3]; Hwang, Harold Y. ^[3]; Yuan, Hongtao ^[5];

^[1]

Nanjing Univ. (China). National Lab. of Solid State Microstructures. School of Physics. Collaborative Innovation Center of Advanced Microstructures
Nanjing Univ. (China). National Lab. of Solid State Microstructures. School of Physics. Collaborative Innovation Center of Advanced Microstructures; Southwest Univ. of Science and Technology, Mianyang (China). School of Material Science and Engineering
Stanford Univ., CA (United States). Geballe Lab. for Advanced Materials; SLAC National Accelerator Lab., Menlo Park, CA (United States). Stanford Inst. for Materials and Energy Sciences
Nanjing Univ. (China). College of Engineering and Applied Sciences
Nanjing Univ. (China). National Lab. of Solid State Microstructures. School of Physics. Collaborative Innovation Center of Advanced Microstructures; Stanford Univ., CA (United States). Geballe Lab. for Advanced Materials; SLAC National Accelerator Lab., Menlo Park, CA (United States). Stanford Inst. for Materials and Energy Sciences

Layered metal chalcogenide materials provide a versatile platform to investigate emergent phenomena and two-dimensional (2D) superconductivity at/near the atomically thin limit. In particular, gate-induced interfacial superconductivity realized by the use of an electric-double-layer transistor (EDLT) has greatly extended the capability to electrically induce superconductivity in oxides, nitrides, and transition metal chalcogenides and enable one to explore new physics, such as the Ising pairing mechanism. Exploiting gate-induced superconductivity in various materials can provide us with additional platforms to understand emergent interfacial superconductivity. In this paper, we report the discovery of gate-induced 2D superconductivity in layered 1T-SnSe₂, a typical member of the main-group metal dichalcogenide (MDC) family, using an EDLT gating geometry. A superconducting transition temperature T_c ≈ 3.9 K was demonstrated at the EDL interface. The 2D nature of the superconductivity therein was further confirmed based on (1) a 2D Tinkham description of the angle-dependent upper critical field B_c2, (2) the existence of a quantum creep state as well as a large ratio of the coherence length to the thickness of superconductivity. Interestingly, the in-plane B_c2 approaching zero temperature was found to be 2–3 times higher than the Pauli limit, which might be related to an electric field-modulated spin–orbit interaction. Finally, such results provide a new perspective to expand the material matrix available for gate-induced 2D superconductivity and the fundamental understanding of interfacial superconductivity.

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Research Organization:: SLAC National Accelerator Lab., Menlo Park, CA (United States); Nanjing Univ. (China)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22); National Key Basic Research Program of China; National Natural Science Foundation of China (NSFC); Fundamental Research Funds for the Central Universities (China); Collaborative Innovation Center of Advanced Microstructures (China)

Grant/Contract Number:: AC02-76SF00515

OSTI ID:: 1471528

Journal Information:: Nano Letters, Journal Name: Nano Letters Journal Issue: 2 Vol. 18; ISSN 1530-6984

Publisher:: American Chemical SocietyCopyright Statement

Country of Publication:: United States

Language:: English

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Title: Gate-Induced Interfacial Superconductivity in 1T-SnSe2

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Title: Gate-Induced Interfacial Superconductivity in 1T-SnSe₂