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Title: Gate-Induced Interfacial Superconductivity in 1T-SnSe2

Abstract

Layered metal chalcogenide materials provide a versatile platform to investigate emergent phenomena and two-dimensional (2D) superconductivity at/near the atomically thin limit. In particular, gate-induced interfacial superconductivity realized by the use of an electric-double-layer transistor (EDLT) has greatly extended the capability to electrically induce superconductivity in oxides, nitrides, and transition metal chalcogenides and enable one to explore new physics, such as the Ising pairing mechanism. Exploiting gate-induced superconductivity in various materials can provide us with additional platforms to understand emergent interfacial superconductivity. In this paper, we report the discovery of gate-induced 2D superconductivity in layered 1T-SnSe2, a typical member of the main-group metal dichalcogenide (MDC) family, using an EDLT gating geometry. A superconducting transition temperature Tc ≈ 3.9 K was demonstrated at the EDL interface. The 2D nature of the superconductivity therein was further confirmed based on (1) a 2D Tinkham description of the angle-dependent upper critical field Bc2, (2) the existence of a quantum creep state as well as a large ratio of the coherence length to the thickness of superconductivity. Interestingly, the in-plane Bc2 approaching zero temperature was found to be 2–3 times higher than the Pauli limit, which might be related to an electric field-modulated spin–orbit interaction. Finally,more » such results provide a new perspective to expand the material matrix available for gate-induced 2D superconductivity and the fundamental understanding of interfacial superconductivity.« less

Authors:
 [1];  [1];  [2]; ORCiD logo [3];  [1];  [1];  [1];  [1];  [1];  [4];  [4];  [1];  [1]; ORCiD logo [4];  [1]; ORCiD logo [3];  [3];  [5]; ORCiD logo [1]
  1. Nanjing Univ. (China). National Lab. of Solid State Microstructures. School of Physics. Collaborative Innovation Center of Advanced Microstructures
  2. Nanjing Univ. (China). National Lab. of Solid State Microstructures. School of Physics. Collaborative Innovation Center of Advanced Microstructures; Southwest Univ. of Science and Technology, Mianyang (China). School of Material Science and Engineering
  3. Stanford Univ., CA (United States). Geballe Lab. for Advanced Materials; SLAC National Accelerator Lab., Menlo Park, CA (United States). Stanford Inst. for Materials and Energy Sciences
  4. Nanjing Univ. (China). College of Engineering and Applied Sciences
  5. Nanjing Univ. (China). National Lab. of Solid State Microstructures. School of Physics. Collaborative Innovation Center of Advanced Microstructures; Stanford Univ., CA (United States). Geballe Lab. for Advanced Materials; SLAC National Accelerator Lab., Menlo Park, CA (United States). Stanford Inst. for Materials and Energy Sciences
Publication Date:
Research Org.:
SLAC National Accelerator Lab., Menlo Park, CA (United States); Nanjing Univ. (China)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES); National Key Basic Research Program of China; National Natural Science Foundation of China (NNSFC); Fundamental Research Funds for the Central Universities (China); Collaborative Innovation Center of Advanced Microstructures (China)
OSTI Identifier:
1471528
Grant/Contract Number:  
AC02-76SF00515; 2015CB921600; 2013CBA01603; 61625402; 11374142; 61574076; 11474147
Resource Type:
Accepted Manuscript
Journal Name:
Nano Letters
Additional Journal Information:
Journal Volume: 18; Journal Issue: 2; Journal ID: ISSN 1530-6984
Publisher:
American Chemical Society
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; electric-double-layer transistor; interfacial superconductivity; metal dichalcogenides; SnSe2

Citation Formats

Zeng, Junwen, Liu, Erfu, Fu, Yajun, Chen, Zhuoyu, Pan, Chen, Wang, Chenyu, Wang, Miao, Wang, Yaojia, Xu, Kang, Cai, Songhua, Yan, Xingxu, Wang, Yu, Liu, Xiaowei, Wang, Peng, Liang, Shi-Jun, Cui, Yi, Hwang, Harold Y., Yuan, Hongtao, and Miao, Feng. Gate-Induced Interfacial Superconductivity in 1T-SnSe2. United States: N. p., 2018. Web. https://doi.org/10.1021/acs.nanolett.7b05157.
Zeng, Junwen, Liu, Erfu, Fu, Yajun, Chen, Zhuoyu, Pan, Chen, Wang, Chenyu, Wang, Miao, Wang, Yaojia, Xu, Kang, Cai, Songhua, Yan, Xingxu, Wang, Yu, Liu, Xiaowei, Wang, Peng, Liang, Shi-Jun, Cui, Yi, Hwang, Harold Y., Yuan, Hongtao, & Miao, Feng. Gate-Induced Interfacial Superconductivity in 1T-SnSe2. United States. https://doi.org/10.1021/acs.nanolett.7b05157
Zeng, Junwen, Liu, Erfu, Fu, Yajun, Chen, Zhuoyu, Pan, Chen, Wang, Chenyu, Wang, Miao, Wang, Yaojia, Xu, Kang, Cai, Songhua, Yan, Xingxu, Wang, Yu, Liu, Xiaowei, Wang, Peng, Liang, Shi-Jun, Cui, Yi, Hwang, Harold Y., Yuan, Hongtao, and Miao, Feng. Wed . "Gate-Induced Interfacial Superconductivity in 1T-SnSe2". United States. https://doi.org/10.1021/acs.nanolett.7b05157. https://www.osti.gov/servlets/purl/1471528.
@article{osti_1471528,
title = {Gate-Induced Interfacial Superconductivity in 1T-SnSe2},
author = {Zeng, Junwen and Liu, Erfu and Fu, Yajun and Chen, Zhuoyu and Pan, Chen and Wang, Chenyu and Wang, Miao and Wang, Yaojia and Xu, Kang and Cai, Songhua and Yan, Xingxu and Wang, Yu and Liu, Xiaowei and Wang, Peng and Liang, Shi-Jun and Cui, Yi and Hwang, Harold Y. and Yuan, Hongtao and Miao, Feng},
abstractNote = {Layered metal chalcogenide materials provide a versatile platform to investigate emergent phenomena and two-dimensional (2D) superconductivity at/near the atomically thin limit. In particular, gate-induced interfacial superconductivity realized by the use of an electric-double-layer transistor (EDLT) has greatly extended the capability to electrically induce superconductivity in oxides, nitrides, and transition metal chalcogenides and enable one to explore new physics, such as the Ising pairing mechanism. Exploiting gate-induced superconductivity in various materials can provide us with additional platforms to understand emergent interfacial superconductivity. In this paper, we report the discovery of gate-induced 2D superconductivity in layered 1T-SnSe2, a typical member of the main-group metal dichalcogenide (MDC) family, using an EDLT gating geometry. A superconducting transition temperature Tc ≈ 3.9 K was demonstrated at the EDL interface. The 2D nature of the superconductivity therein was further confirmed based on (1) a 2D Tinkham description of the angle-dependent upper critical field Bc2, (2) the existence of a quantum creep state as well as a large ratio of the coherence length to the thickness of superconductivity. Interestingly, the in-plane Bc2 approaching zero temperature was found to be 2–3 times higher than the Pauli limit, which might be related to an electric field-modulated spin–orbit interaction. Finally, such results provide a new perspective to expand the material matrix available for gate-induced 2D superconductivity and the fundamental understanding of interfacial superconductivity.},
doi = {10.1021/acs.nanolett.7b05157},
journal = {Nano Letters},
number = 2,
volume = 18,
place = {United States},
year = {2018},
month = {1}
}

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Cited by: 14 works
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Figures / Tables:

Figure 1 Figure 1: Crystal structure of 1T-SnSe2, transfer curve, and superconductivity of SnSe2-EDLT. (a) The top and side views of the crystal structure. (b) Sketch of a SnSe2-EDLT device. (c) Optical microscope image of a typical multiterminal Hall bar device. The scale bar is 10 μm. (d–f) Transfer curve and superconductivitymore » of dev #01. (d) Isd as a function of sweeping VG with Vsd = 0.1 V. The inset shows the magnetic field dependence of Rxy at T = 5 K with VG = 5 V. (e) Temperature-dependent resistance between 2 and 160 K with VG = 5 V. A metal-to-superconductor transition occurs at Tc = 3.9 K. (f) Temperature dependence of the magnetoresistance. The measurements were carried out using an excitation current of 50 nA and varying out-of-plane magnetic fields up to 1 T under the same VG« less

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