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Title: Persistent Charge-Density-Wave Order in Single-Layer TaSe 2

Abstract

We present the electronic characterization of single-layer 1H-TaSe2 grown by molecular beam epitaxy using a combined angle-resolved photoemission spectroscopy, scanning tunneling microscopy/spectroscopy, and density functional theory calculations. We demonstrate that 3 × 3 charge-density-wave (CDW) order persists despite distinct changes in the low energy electronic structure highlighted by the reduction in the number of bands crossing the Fermi energy and the corresponding modification of Fermi surface topology. Enhanced spin-orbit coupling and lattice distortion in the single-layer play a crucial role in the formation of CDW order. Our findings provide a deeper understanding of the nature of CDW order in the two-dimensional limit.

Authors:
ORCiD logo [1];  [2];  [3];  [2];  [4];  [5];  [2];  [2];  [6];  [2];  [3]; ORCiD logo [5];  [7];  [3];  [3];  [8]; ORCiD logo [9]; ORCiD logo [5]
  1. Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States); Pohang Univ. of Science and Technology, Pohang (Korea)
  2. Univ. of California, Berkeley, CA (United States)
  3. Pohang Univ. of Science and Technology, Pohang (Korea)
  4. Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States); SLAC National Accelerator Lab., Menlo Park, CA (United States)
  5. Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
  6. Univ. of California, Berkeley, CA (United States); Henan Univ., Keifeng (People's Republic of China)
  7. Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States); Stanford Univ., Stanford, CA (United States)
  8. Pusan National Univ., Busan (Korea)
  9. Univ. of California, Berkeley, CA (United States); Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
Publication Date:
Research Org.:
SLAC National Accelerator Lab., Menlo Park, CA (United States); Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States). Advanced Light Source; Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES)
OSTI Identifier:
1471522
Alternate Identifier(s):
OSTI ID: 1471447; OSTI ID: 1530339
Grant/Contract Number:  
AC02-76SF00515; 2015R1A2A1A15053564; 2016K1A4A4A01922028; AC02-05CH11231
Resource Type:
Accepted Manuscript
Journal Name:
Nano Letters
Additional Journal Information:
Journal Volume: 18; Journal Issue: 2; Journal ID: ISSN 1530-6984
Publisher:
American Chemical Society
Country of Publication:
United States
Language:
English
Subject:
74 ATOMIC AND MOLECULAR PHYSICS; 2D materials; ARPES; CDW; charge density wave; MBE; STM; TaSe2; Transition metal dichalcogenides; 36 MATERIALS SCIENCE

Citation Formats

Ryu, Hyejin, Chen, Yi, Kim, Heejung, Tsai, Hsin -Zon, Tang, Shujie, Jiang, Juan, Liou, Franklin, Kahn, Salman, Jia, Caihong, Omrani, Arash A., Shim, Ji Hoon, Hussain, Zahid, Shen, Zhi -Xun, Kim, Kyoo, Min, Byung Il, Hwang, Choongyu, Crommie, Michael F., and Mo, Sung -Kwan. Persistent Charge-Density-Wave Order in Single-Layer TaSe 2. United States: N. p., 2018. Web. doi:10.1021/acs.nanolett.7b03264.
Ryu, Hyejin, Chen, Yi, Kim, Heejung, Tsai, Hsin -Zon, Tang, Shujie, Jiang, Juan, Liou, Franklin, Kahn, Salman, Jia, Caihong, Omrani, Arash A., Shim, Ji Hoon, Hussain, Zahid, Shen, Zhi -Xun, Kim, Kyoo, Min, Byung Il, Hwang, Choongyu, Crommie, Michael F., & Mo, Sung -Kwan. Persistent Charge-Density-Wave Order in Single-Layer TaSe 2. United States. https://doi.org/10.1021/acs.nanolett.7b03264
Ryu, Hyejin, Chen, Yi, Kim, Heejung, Tsai, Hsin -Zon, Tang, Shujie, Jiang, Juan, Liou, Franklin, Kahn, Salman, Jia, Caihong, Omrani, Arash A., Shim, Ji Hoon, Hussain, Zahid, Shen, Zhi -Xun, Kim, Kyoo, Min, Byung Il, Hwang, Choongyu, Crommie, Michael F., and Mo, Sung -Kwan. Thu . "Persistent Charge-Density-Wave Order in Single-Layer TaSe 2". United States. https://doi.org/10.1021/acs.nanolett.7b03264. https://www.osti.gov/servlets/purl/1471522.
@article{osti_1471522,
title = {Persistent Charge-Density-Wave Order in Single-Layer TaSe 2},
author = {Ryu, Hyejin and Chen, Yi and Kim, Heejung and Tsai, Hsin -Zon and Tang, Shujie and Jiang, Juan and Liou, Franklin and Kahn, Salman and Jia, Caihong and Omrani, Arash A. and Shim, Ji Hoon and Hussain, Zahid and Shen, Zhi -Xun and Kim, Kyoo and Min, Byung Il and Hwang, Choongyu and Crommie, Michael F. and Mo, Sung -Kwan},
abstractNote = {We present the electronic characterization of single-layer 1H-TaSe2 grown by molecular beam epitaxy using a combined angle-resolved photoemission spectroscopy, scanning tunneling microscopy/spectroscopy, and density functional theory calculations. We demonstrate that 3 × 3 charge-density-wave (CDW) order persists despite distinct changes in the low energy electronic structure highlighted by the reduction in the number of bands crossing the Fermi energy and the corresponding modification of Fermi surface topology. Enhanced spin-orbit coupling and lattice distortion in the single-layer play a crucial role in the formation of CDW order. Our findings provide a deeper understanding of the nature of CDW order in the two-dimensional limit.},
doi = {10.1021/acs.nanolett.7b03264},
journal = {Nano Letters},
number = 2,
volume = 18,
place = {United States},
year = {Thu Jan 04 00:00:00 EST 2018},
month = {Thu Jan 04 00:00:00 EST 2018}
}

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Figures / Tables:

Figure 1. Figure 1.: Growth of epitaxial single-layer 1H-TaSe2 film. (a) Crystal structure 1H-TaSe2 single-layer film on bilayer graphene 6H-SiC(0001) from top view and (b) side view. (c) RHEED pattern of epitaxial bilayer graphene on 6H-SiC(0001) substrate and (d) 0.9 monolayer (ML, 0.9 ML means that 90% area of the substrate surfacemore » was covered by single-layer TaSe2) 1H-TaSe2 film. (e) LEED pattern of 0.9 ML 1H-TaSe2 film. (f) Core-level spectra of 1H-TaSe2 single-layer taken at 15 K with 80 eV photon energy. (g) Large-scale STM image of 0.9 ML 1H-TaSe2/BLG (Vb = 1 V, It = 1 pA, T = 5 K). (h) Atomically resolved STM image of single-layer 1H-TaSe2 shows 3 x 3 CDW order (Vb = 50 mV, It = 180 pA, T = 5K).« less

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