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Title: Gate-Controlled Spin-Valley Locking of Resident Carriers in WSe 2 Monolayers

Abstract

Using time-resolved Kerr rotation, we measure the spin-valley dynamics of resident electrons and holes in single charge-tunable monolayers of the archetypal transition-metal dichalcogenide (TMD) semiconductor WSe2. In the n-type regime, we observe long (~ 130 ns) polarization relaxation of electrons that is sensitive to in-plane magnetic fields By, indicating spin relaxation. In marked contrast, extraordinarily long (~ 2 μs) polarization relaxation of holes is revealed in the p-type regime, which is unaffected by By, directly confirming long-standing expectations of strong spin-valley locking of holes in the valence band of monolayer TMDs. Finally, supported by continuous-wave Kerr spectroscopy and Hanle measurements, these studies provide a unified picture of carrier polarization dynamics in monolayer TMDs, which can guide design principles for future valleytronic devices.

Authors:
ORCiD logo [1];  [1];  [2];  [2];  [2];  [2];  [1]
  1. Los Alamos National Lab. (LANL), Los Alamos, NM (United States)
  2. Univ. de Toulouse,Toulouse (France)
Publication Date:
Research Org.:
Los Alamos National Lab. (LANL), Los Alamos, NM (United States)
Sponsoring Org.:
National Science Foundation (NSF); European Research Council (ERC); USDOE
OSTI Identifier:
1471348
Alternate Identifier(s):
OSTI ID: 1395189
Report Number(s):
LA-UR-17-21735
Journal ID: ISSN 0031-9007; PRLTAO
Grant/Contract Number:  
AC52-06NA25396; 306719
Resource Type:
Accepted Manuscript
Journal Name:
Physical Review Letters
Additional Journal Information:
Journal Volume: 119; Journal Issue: 13; Journal ID: ISSN 0031-9007
Publisher:
American Physical Society (APS)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; High Magnetic Field Science; Transition-Metal Dichalcogenide; TMD; Valleytronic

Citation Formats

Crooker, Scott A., Yang, Luyi, Robert, Cedric, Wang, Gang, Urbaszek, Bernhard, Marie, Xavier, and Dey, Prasenjit. Gate-Controlled Spin-Valley Locking of Resident Carriers in WSe2 Monolayers. United States: N. p., 2017. Web. doi:10.1103/PhysRevLett.119.137401.
Crooker, Scott A., Yang, Luyi, Robert, Cedric, Wang, Gang, Urbaszek, Bernhard, Marie, Xavier, & Dey, Prasenjit. Gate-Controlled Spin-Valley Locking of Resident Carriers in WSe2 Monolayers. United States. doi:10.1103/PhysRevLett.119.137401.
Crooker, Scott A., Yang, Luyi, Robert, Cedric, Wang, Gang, Urbaszek, Bernhard, Marie, Xavier, and Dey, Prasenjit. Wed . "Gate-Controlled Spin-Valley Locking of Resident Carriers in WSe2 Monolayers". United States. doi:10.1103/PhysRevLett.119.137401. https://www.osti.gov/servlets/purl/1471348.
@article{osti_1471348,
title = {Gate-Controlled Spin-Valley Locking of Resident Carriers in WSe2 Monolayers},
author = {Crooker, Scott A. and Yang, Luyi and Robert, Cedric and Wang, Gang and Urbaszek, Bernhard and Marie, Xavier and Dey, Prasenjit},
abstractNote = {Using time-resolved Kerr rotation, we measure the spin-valley dynamics of resident electrons and holes in single charge-tunable monolayers of the archetypal transition-metal dichalcogenide (TMD) semiconductor WSe2. In the n-type regime, we observe long (~ 130 ns) polarization relaxation of electrons that is sensitive to in-plane magnetic fields By, indicating spin relaxation. In marked contrast, extraordinarily long (~ 2 μs) polarization relaxation of holes is revealed in the p-type regime, which is unaffected by By, directly confirming long-standing expectations of strong spin-valley locking of holes in the valence band of monolayer TMDs. Finally, supported by continuous-wave Kerr spectroscopy and Hanle measurements, these studies provide a unified picture of carrier polarization dynamics in monolayer TMDs, which can guide design principles for future valleytronic devices.},
doi = {10.1103/PhysRevLett.119.137401},
journal = {Physical Review Letters},
number = 13,
volume = 119,
place = {United States},
year = {2017},
month = {9}
}

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Cited by: 24 works
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Works referenced in this record:

Coupled Spin and Valley Physics in Monolayers of MoS 2 and Other Group-VI Dichalcogenides
journal, May 2012


Many-Body Effects in Valleytronics: Direct Measurement of Valley Lifetimes in Single-Layer MoS 2
journal, December 2013

  • Mai, Cong; Barrette, Andrew; Yu, Yifei
  • Nano Letters, Vol. 14, Issue 1
  • DOI: 10.1021/nl403742j

Valley dynamics probed through charged and neutral exciton emission in monolayer WSe 2
journal, August 2014


Exciton radiative lifetime in transition metal dichalcogenide monolayers
journal, May 2016


Optically initialized robust valley-polarized holes in monolayer WSe2
journal, November 2015

  • Hsu, Wei-Ting; Chen, Yen-Lun; Chen, Chang-Hsiao
  • Nature Communications, Vol. 6, Issue 1
  • DOI: 10.1038/ncomms9963

Quantum-Dot Spin-State Preparation with Near-Unity Fidelity
journal, April 2006


Robust optical emission polarization in MoS 2 monolayers through selective valley excitation
journal, August 2012


Valley filter and valley valve in graphene
journal, February 2007

  • Rycerz, A.; Tworzydło, J.; Beenakker, C. W. J.
  • Nature Physics, Vol. 3, Issue 3, p. 172-175
  • DOI: 10.1038/nphys547

Optical generation of excitonic valley coherence in monolayer WSe2
journal, August 2013

  • Jones, Aaron M.; Yu, Hongyi; Ghimire, Nirmal J.
  • Nature Nanotechnology, Vol. 8, Issue 9
  • DOI: 10.1038/nnano.2013.151

Mode Locking of Electron Spin Coherences in Singly Charged Quantum Dots
journal, July 2006


Transport Theory of Monolayer Transition-Metal Dichalcogenides through Symmetry
journal, July 2013


Magnetic brightening and control of dark excitons in monolayer WSe2
journal, June 2017

  • Zhang, Xiao-Xiao; Cao, Ting; Lu, Zhengguang
  • Nature Nanotechnology, Vol. 12, Issue 9
  • DOI: 10.1038/nnano.2017.105

Van der Waals heterostructures
journal, July 2013

  • Geim, A. K.; Grigorieva, I. V.
  • Nature, Vol. 499, Issue 7459, p. 419-425
  • DOI: 10.1038/nature12385

Spin and pseudospins in layered transition metal dichalcogenides
journal, April 2014

  • Xu, Xiaodong; Yao, Wang; Xiao, Di
  • Nature Physics, Vol. 10, Issue 5
  • DOI: 10.1038/nphys2942

Electronic Structure, Surface Doping, and Optical Response in Epitaxial WSe 2 Thin Films
journal, March 2016


Electronics and optoelectronics of two-dimensional transition metal dichalcogenides
journal, November 2012

  • Wang, Qing Hua; Kalantar-Zadeh, Kourosh; Kis, Andras
  • Nature Nanotechnology, Vol. 7, Issue 11, p. 699-712
  • DOI: 10.1038/nnano.2012.193

Photonics and optoelectronics of 2D semiconductor transition metal dichalcogenides
journal, March 2016


Optical investigations of quantum dot spin dynamics as a function of external electric and magnetic fields
journal, February 2008


Direct measurement of exciton valley coherence in monolayer WSe2
journal, February 2016

  • Hao, Kai; Moody, Galan; Wu, Fengcheng
  • Nature Physics, Vol. 12, Issue 7
  • DOI: 10.1038/nphys3674

Local Hanle-effect studies of spin drift and diffusion in n:GaAs epilayers and spin-transport devices
journal, September 2007


k · p theory for two-dimensional transition metal dichalcogenide semiconductors
journal, April 2015


Optical excitation and control of electron spins in semiconductor quantum wells
journal, April 2010

  • Chen, Zhigang; Carter, Samuel G.; Bratschitsch, Rudolf
  • Physica E: Low-dimensional Systems and Nanostructures, Vol. 42, Issue 6
  • DOI: 10.1016/j.physe.2010.01.043

Trion fine structure and coupled spin–valley dynamics in monolayer tungsten disulfide
journal, September 2016

  • Plechinger, Gerd; Nagler, Philipp; Arora, Ashish
  • Nature Communications, Vol. 7, Issue 1
  • DOI: 10.1038/ncomms12715

Valley Susceptibility of an Interacting Two-Dimensional Electron System
journal, November 2006


Intervalley dark trion states with spin lifetimes of 150 ns in WSe 2
journal, June 2017


Coherent Electronic Coupling in Atomically Thin MoSe 2
journal, May 2014


Mobility engineering and a metal–insulator transition in monolayer MoS2
journal, June 2013

  • Radisavljevic, Branimir; Kis, Andras
  • Nature Materials, Vol. 12, Issue 9
  • DOI: 10.1038/nmat3687

Carrier relaxation and luminescence polarization in quantum wells
journal, October 1990


Valley-Contrasting Physics in Graphene: Magnetic Moment and Topological Transport
journal, December 2007


Exciton valley dynamics probed by Kerr rotation in WSe 2 monolayers
journal, October 2014


Long-Lived Hole Spin/Valley Polarization Probed by Kerr Rotation in Monolayer WSe 2
journal, July 2016


Low-temperature spin relaxation in n -type GaAs
journal, December 2002


Long-lived nanosecond spin relaxation and spin coherence of electrons in monolayer MoS2 and WS2
journal, August 2015

  • Yang, Luyi; Sinitsyn, Nikolai A.; Chen, Weibing
  • Nature Physics, Vol. 11, Issue 10
  • DOI: 10.1038/nphys3419

Ultrafast Coulomb-Induced Intervalley Coupling in Atomically Thin WS 2
journal, April 2016


The valley Hall effect in MoS2 transistors
journal, June 2014


Direct observation of spin-polarized bulk bands in an inversion-symmetric semiconductor
journal, October 2014

  • Riley, J. M.; Mazzola, F.; Dendzik, M.
  • Nature Physics, Vol. 10, Issue 11
  • DOI: 10.1038/nphys3105

Observation of ultralong valley lifetime in WSe 2 /MoS 2 heterostructures
journal, July 2017


    Works referencing / citing this record:

    Two-dimensional semiconductors in the regime of strong light-matter coupling
    journal, July 2018


    Hyperfine interaction in atomically thin transition metal dichalcogenides
    journal, January 2019

    • Avdeev, Ivan D.; Smirnov, Dmitry S.
    • Nanoscale Advances, Vol. 1, Issue 7
    • DOI: 10.1039/c8na00360b

    Two-dimensional semiconductors in the regime of strong light-matter coupling
    journal, July 2018


    Hyperfine interaction in atomically thin transition metal dichalcogenides
    journal, January 2019

    • Avdeev, Ivan D.; Smirnov, Dmitry S.
    • Nanoscale Advances, Vol. 1, Issue 7
    • DOI: 10.1039/c8na00360b

    Spin depolarization dynamics of WSe 2 bilayer
    journal, May 2018