Gate-Controlled Spin-Valley Locking of Resident Carriers in WSe2 Monolayers

Crooker, Scott A.; Yang, Luyi; Robert, Cedric; Wang, Gang; Urbaszek, Bernhard; Marie, Xavier; Dey, Prasenjit

doi:10.1103/PhysRevLett.119.137401

Title: Gate-Controlled Spin-Valley Locking of Resident Carriers in ${WSe}_{2}$ Monolayers

Abstract

Using time-resolved Kerr rotation, we measure the spin-valley dynamics of resident electrons and holes in single charge-tunable monolayers of the archetypal transition-metal dichalcogenide (TMD) semiconductor WSe₂. In the n-type regime, we observe long (~ 130 ns) polarization relaxation of electrons that is sensitive to in-plane magnetic fields B_y, indicating spin relaxation. In marked contrast, extraordinarily long (~ 2 μs) polarization relaxation of holes is revealed in the p-type regime, which is unaffected by B_y, directly confirming long-standing expectations of strong spin-valley locking of holes in the valence band of monolayer TMDs. Finally, supported by continuous-wave Kerr spectroscopy and Hanle measurements, these studies provide a unified picture of carrier polarization dynamics in monolayer TMDs, which can guide design principles for future valleytronic devices.

Authors:

^[1]; Yang, Luyi ^[1]; Robert, Cedric ^[2]; Wang, Gang ^[2]; Urbaszek, Bernhard ^[2]; Marie, Xavier ^[2]; Dey, Prasenjit ^[1]

Los Alamos National Lab. (LANL), Los Alamos, NM (United States)
Univ. de Toulouse,Toulouse (France)

Publication Date:: Wed Sep 27 00:00:00 EDT 2017

Research Org.:: Los Alamos National Lab. (LANL), Los Alamos, NM (United States)

Sponsoring Org.:: National Science Foundation (NSF); European Research Council (ERC); USDOE

OSTI Identifier:: 1471348

Alternate Identifier(s):: OSTI ID: 1395189

Report Number(s):: LA-UR-17-21735
Journal ID: ISSN 0031-9007; PRLTAO

Grant/Contract Number:: AC52-06NA25396; 306719

Resource Type:: Accepted Manuscript

Journal Name:: Physical Review Letters

Additional Journal Information:: Journal Volume: 119; Journal Issue: 13; Journal ID: ISSN 0031-9007

Publisher:: American Physical Society (APS)

Country of Publication:: United States

Language:: English

Subject:: 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; High Magnetic Field Science; Transition-Metal Dichalcogenide; TMD; Valleytronic

Citation Formats


                    Crooker, Scott A., Yang, Luyi, Robert, Cedric, Wang, Gang, Urbaszek, Bernhard, Marie, Xavier, and Dey, Prasenjit. Gate-Controlled Spin-Valley Locking of Resident Carriers in WSe2 Monolayers.  United States: N. p., 2017. 
Web.  doi:10.1103/PhysRevLett.119.137401.

Copy to clipboard


                    Crooker, Scott A., Yang, Luyi, Robert, Cedric, Wang, Gang, Urbaszek, Bernhard, Marie, Xavier, & Dey, Prasenjit. Gate-Controlled Spin-Valley Locking of Resident Carriers in WSe2 Monolayers.  United States.  https://doi.org/10.1103/PhysRevLett.119.137401

Copy to clipboard


                    Crooker, Scott A., Yang, Luyi, Robert, Cedric, Wang, Gang, Urbaszek, Bernhard, Marie, Xavier, and Dey, Prasenjit. Wed .  
"Gate-Controlled Spin-Valley Locking of Resident Carriers in WSe2 Monolayers".  United States.  https://doi.org/10.1103/PhysRevLett.119.137401.  https://www.osti.gov/servlets/purl/1471348.

Copy to clipboard


                    
@article{osti_1471348,

  title        = {Gate-Controlled Spin-Valley Locking of Resident Carriers in WSe2 Monolayers},

  author       = {Crooker, Scott A. and Yang, Luyi and Robert, Cedric and Wang, Gang and Urbaszek, Bernhard and Marie, Xavier and Dey, Prasenjit},

  abstractNote = {Using time-resolved Kerr rotation, we measure the spin-valley dynamics of resident electrons and holes in single charge-tunable monolayers of the archetypal transition-metal dichalcogenide (TMD) semiconductor WSe2. In the n-type regime, we observe long (~ 130 ns) polarization relaxation of electrons that is sensitive to in-plane magnetic fields By, indicating spin relaxation. In marked contrast, extraordinarily long (~ 2 μs) polarization relaxation of holes is revealed in the p-type regime, which is unaffected by By, directly confirming long-standing expectations of strong spin-valley locking of holes in the valence band of monolayer TMDs. Finally, supported by continuous-wave Kerr spectroscopy and Hanle measurements, these studies provide a unified picture of carrier polarization dynamics in monolayer TMDs, which can guide design principles for future valleytronic devices.},

  doi          = {10.1103/PhysRevLett.119.137401},

  journal      = {Physical Review Letters},

  number       = 13,

  volume       = 119,

  place        = {United States},

  year         = {Wed Sep 27 00:00:00 EDT 2017},

  month        = {Wed Sep 27 00:00:00 EDT 2017}

}

Copy to clipboard

Journal Article:

Free Publicly Available Full Text

Accepted Manuscript (Publisher)

Accepted Manuscript (DOE)

Publisher's Version of Record

https://doi.org/10.1103/PhysRevLett.119.137401

Other availability

Search WorldCat to find libraries that may hold this journal

Citation Metrics:

Cited by: 87 works

Citation information provided by
Web of Science

Save / Share:

Export Metadata

Save to My Library

Works referenced in this record:

Coupled Spin and Valley Physics in Monolayers of ${MoS}_{2}$ and Other Group-VI Dichalcogenides
journal, May 2012

Xiao, Di; Liu, Gui-Bin; Feng, Wanxiang
Physical Review Letters, Vol. 108, Issue 19
DOI: 10.1103/PhysRevLett.108.196802

Many-Body Effects in Valleytronics: Direct Measurement of Valley Lifetimes in Single-Layer MoS ₂
journal, December 2013

Mai, Cong; Barrette, Andrew; Yu, Yifei
Nano Letters, Vol. 14, Issue 1
DOI: 10.1021/nl403742j

Valley dynamics probed through charged and neutral exciton emission in monolayer ${WSe}_{2}$
journal, August 2014

Wang, G.; Bouet, L.; Lagarde, D.
Physical Review B, Vol. 90, Issue 7
DOI: 10.1103/PhysRevB.90.075413

Exciton radiative lifetime in transition metal dichalcogenide monolayers
journal, May 2016

Robert, C.; Lagarde, D.; Cadiz, F.
Physical Review B, Vol. 93, Issue 20
DOI: 10.1103/PhysRevB.93.205423

Optically initialized robust valley-polarized holes in monolayer WSe2
journal, November 2015

Hsu, Wei-Ting; Chen, Yen-Lun; Chen, Chang-Hsiao
Nature Communications, Vol. 6, Issue 1
DOI: 10.1038/ncomms9963

Quantum-Dot Spin-State Preparation with Near-Unity Fidelity
journal, April 2006

Atature, M.
Science, Vol. 312, Issue 5773
DOI: 10.1126/science.1126074

Robust optical emission polarization in MoS $_{2}$ monolayers through selective valley excitation
journal, August 2012

Sallen, G.; Bouet, L.; Marie, X.
Physical Review B, Vol. 86, Issue 8
DOI: 10.1103/PhysRevB.86.081301

Valley filter and valley valve in graphene
journal, February 2007

Rycerz, A.; Tworzydło, J.; Beenakker, C. W. J.
Nature Physics, Vol. 3, Issue 3, p. 172-175
DOI: 10.1038/nphys547

Optical generation of excitonic valley coherence in monolayer WSe2
journal, August 2013

Jones, Aaron M.; Yu, Hongyi; Ghimire, Nirmal J.
Nature Nanotechnology, Vol. 8, Issue 9
DOI: 10.1038/nnano.2013.151

Mode Locking of Electron Spin Coherences in Singly Charged Quantum Dots
journal, July 2006

Greilich, A.
Science, Vol. 313, Issue 5785
DOI: 10.1126/science.1128215

Transport Theory of Monolayer Transition-Metal Dichalcogenides through Symmetry
journal, July 2013

Song, Yang; Dery, Hanan
Physical Review Letters, Vol. 111, Issue 2
DOI: 10.1103/PhysRevLett.111.026601

Magnetic brightening and control of dark excitons in monolayer WSe2
journal, June 2017

Zhang, Xiao-Xiao; Cao, Ting; Lu, Zhengguang
Nature Nanotechnology, Vol. 12, Issue 9
DOI: 10.1038/nnano.2017.105

Van der Waals heterostructures
journal, July 2013

Geim, A. K.; Grigorieva, I. V.
Nature, Vol. 499, Issue 7459, p. 419-425
DOI: 10.1038/nature12385

Spin and pseudospins in layered transition metal dichalcogenides
journal, April 2014

Xu, Xiaodong; Yao, Wang; Xiao, Di
Nature Physics, Vol. 10, Issue 5
DOI: 10.1038/nphys2942

Electronic Structure, Surface Doping, and Optical Response in Epitaxial WSe ₂ Thin Films
journal, March 2016

Zhang, Yi; Ugeda, Miguel M.; Jin, Chenhao
Nano Letters, Vol. 16, Issue 4
DOI: 10.1021/acs.nanolett.6b00059

Electronics and optoelectronics of two-dimensional transition metal dichalcogenides
journal, November 2012

Wang, Qing Hua; Kalantar-Zadeh, Kourosh; Kis, Andras
Nature Nanotechnology, Vol. 7, Issue 11, p. 699-712
DOI: 10.1038/nnano.2012.193

Photonics and optoelectronics of 2D semiconductor transition metal dichalcogenides
journal, March 2016

Mak, Kin Fai; Shan, Jie
Nature Photonics, Vol. 10, Issue 4
DOI: 10.1038/nphoton.2015.282

Optical investigations of quantum dot spin dynamics as a function of external electric and magnetic fields
journal, February 2008

Dreiser, Jan; Atatüre, Mete; Galland, Christophe
Physical Review B, Vol. 77, Issue 7
DOI: 10.1103/PhysRevB.77.075317

Direct measurement of exciton valley coherence in monolayer WSe2
journal, February 2016

Hao, Kai; Moody, Galan; Wu, Fengcheng
Nature Physics, Vol. 12, Issue 7
DOI: 10.1038/nphys3674

Local Hanle-effect studies of spin drift and diffusion in n:GaAs epilayers and spin-transport devices
journal, September 2007

Furis, M.; Smith, D. L.; Kos, S.
New Journal of Physics, Vol. 9, Issue 9
DOI: 10.1088/1367-2630/9/9/347

k · p theory for two-dimensional transition metal dichalcogenide semiconductors
journal, April 2015

Kormányos, Andor; Burkard, Guido; Gmitra, Martin
2D Materials, Vol. 2, Issue 2
DOI: 10.1088/2053-1583/2/2/022001

Optical excitation and control of electron spins in semiconductor quantum wells
journal, April 2010

Chen, Zhigang; Carter, Samuel G.; Bratschitsch, Rudolf
Physica E: Low-dimensional Systems and Nanostructures, Vol. 42, Issue 6
DOI: 10.1016/j.physe.2010.01.043

Trion fine structure and coupled spin–valley dynamics in monolayer tungsten disulfide
journal, September 2016

Plechinger, Gerd; Nagler, Philipp; Arora, Ashish
Nature Communications, Vol. 7, Issue 1
DOI: 10.1038/ncomms12715

Valley Susceptibility of an Interacting Two-Dimensional Electron System
journal, November 2006

Gunawan, O.; Shkolnikov, Y. P.; Vakili, K.
Physical Review Letters, Vol. 97, Issue 18
DOI: 10.1103/PhysRevLett.97.186404

Intervalley dark trion states with spin lifetimes of 150 ns in ${WSe}_{2}$
journal, June 2017

Volmer, F.; Pissinger, S.; Ersfeld, M.
Physical Review B, Vol. 95, Issue 23
DOI: 10.1103/PhysRevB.95.235408

Coherent Electronic Coupling in Atomically Thin ${MoSe}_{2}$
journal, May 2014

Singh, Akshay; Moody, Galan; Wu, Sanfeng
Physical Review Letters, Vol. 112, Issue 21
DOI: 10.1103/PhysRevLett.112.216804

Mobility engineering and a metal–insulator transition in monolayer MoS2
journal, June 2013

Radisavljevic, Branimir; Kis, Andras
Nature Materials, Vol. 12, Issue 9
DOI: 10.1038/nmat3687

Carrier relaxation and luminescence polarization in quantum wells
journal, October 1990

Uenoyama, T.; Sham, L. J.
Physical Review B, Vol. 42, Issue 11
DOI: 10.1103/PhysRevB.42.7114

Valley-Contrasting Physics in Graphene: Magnetic Moment and Topological Transport
journal, December 2007

Xiao, Di; Yao, Wang; Niu, Qian
Physical Review Letters, Vol. 99, Issue 23
DOI: 10.1103/PhysRevLett.99.236809

Exciton valley dynamics probed by Kerr rotation in ${WSe}_{2}$ monolayers
journal, October 2014

Zhu, C. R.; Zhang, K.; Glazov, M.
Physical Review B, Vol. 90, Issue 16
DOI: 10.1103/PhysRevB.90.161302

Long-Lived Hole Spin/Valley Polarization Probed by Kerr Rotation in Monolayer WSe ₂
journal, July 2016

Song, Xinlin; Xie, Saien; Kang, Kibum
Nano Letters, Vol. 16, Issue 8
DOI: 10.1021/acs.nanolett.6b01727

Low-temperature spin relaxation in n -type GaAs
journal, December 2002

Dzhioev, R. I.; Kavokin, K. V.; Korenev, V. L.
Physical Review B, Vol. 66, Issue 24
DOI: 10.1103/PhysRevB.66.245204

Long-lived nanosecond spin relaxation and spin coherence of electrons in monolayer MoS2 and WS2
journal, August 2015

Yang, Luyi; Sinitsyn, Nikolai A.; Chen, Weibing
Nature Physics, Vol. 11, Issue 10
DOI: 10.1038/nphys3419

Ultrafast Coulomb-Induced Intervalley Coupling in Atomically Thin WS ₂
journal, April 2016

Schmidt, Robert; Berghäuser, Gunnar; Schneider, Robert
Nano Letters, Vol. 16, Issue 5
DOI: 10.1021/acs.nanolett.5b04733

The valley Hall effect in MoS2 transistors
journal, June 2014

Mak, K. F.; McGill, K. L.; Park, J.
Science, Vol. 344, Issue 6191
DOI: 10.1126/science.1250140

Direct observation of spin-polarized bulk bands in an inversion-symmetric semiconductor
journal, October 2014

Riley, J. M.; Mazzola, F.; Dendzik, M.
Nature Physics, Vol. 10, Issue 11
DOI: 10.1038/nphys3105

Observation of ultralong valley lifetime in WSe ₂ /MoS ₂ heterostructures
journal, July 2017

Kim, Jonghwan; Jin, Chenhao; Chen, Bin
Science Advances, Vol. 3, Issue 7
DOI: 10.1126/sciadv.1700518

Valley depolarization due to intervalley and intravalley electron-hole exchange interactions in monolayer ${MoS}_{2}$
journal, May 2014

Yu, T.; Wu, M. W.
Physical Review B, Vol. 89, Issue 20
DOI: 10.1103/PhysRevB.89.205303

Spin–flip processes and radiative decay of dark intravalley excitons in transition metal dichalcogenide monolayers
journal, August 2016

Slobodeniuk, A. O.; Basko, D. M.
2D Materials, Vol. 3, Issue 3
DOI: 10.1088/2053-1583/3/3/035009

Twist-tailoring Coulomb correlations in van der Waals homobilayers
text, January 2020

Merkl, Philipp; Mooshammer, Fabian; Brem, Samuel
Universität Regensburg
DOI: 10.5283/epub.43186

Valley contrasting physics in graphene: magnetic moment and topological transport
text, January 2007

Xiao, Di; Yao, Wang; Niu, Qian
arXiv
DOI: 10.48550/arxiv.0709.1274

Mobility engineering and metal-insulator transition in monolayer MoS2
text, January 2013

Radisavljevic, Branimir; Kis, Andras
arXiv
DOI: 10.48550/arxiv.1301.4947

Optical Generation of Excitonic Valley Coherence in Monolayer WSe2
text, January 2013

Jones, Aaron Mitchell; Yu, Hongyi; Ghimire, Nirmal
arXiv
DOI: 10.48550/arxiv.1303.5318

k.p theory for two-dimensional transition metal dichalcogenide semiconductors
text, January 2014

Kormányos, Andor; Burkard, Guido; Gmitra, Martin
arXiv
DOI: 10.48550/arxiv.1410.6666

Long-lived nanosecond spin relaxation and spin coherence of electrons in monolayer MoS_2 and WS_2
text, January 2015

Yang, Luyi; Sinitsyn, Nikolai A.; Chen, Weibing
arXiv
DOI: 10.48550/arxiv.1506.00996

Exciton Radiative Lifetime in Transition Metal Dichalcogenide Monolayers
text, January 2016

Robert, C.; Lagarde, D.; Cadiz, F.
arXiv
DOI: 10.48550/arxiv.1603.00277

Spin-flip processes and radiative decay of dark intravalley excitons in transition metal dichalcogenide monolayers
text, January 2016

Slobodeniuk, A. O.; Basko, D. M.
arXiv
DOI: 10.48550/arxiv.1603.02572

Magnetic brightening and control of dark excitons in monolayer WSe2
text, January 2016

Zhang, Xiao-Xiao; Cao, Ting; Lu, Zhengguang
arXiv
DOI: 10.48550/arxiv.1612.03558

Low-temperature spin relaxation in n-type GaAs
text, January 2002

Dzhioev, R. I.; Kavokin, K. V.; Korenev, V. L.
arXiv
DOI: 10.48550/arxiv.cond-mat/0208083

Valley susceptibility of an interacting two-dimensional electron system
text, January 2006

Gunawan, O.; Shkolnikov, Y. P.; Vakili, K.
arXiv
DOI: 10.48550/arxiv.cond-mat/0605692

Valley filter and valley valve in graphene
text, January 2006

Rycerz, A.; Tworzydlo, J.; Beenakker, C. W. J.
arXiv
DOI: 10.48550/arxiv.cond-mat/0608533

Works referencing / citing this record:

Valleytronics: Opportunities, Challenges, and Paths Forward
journal, August 2018

Vitale, Steven A.; Nezich, Daniel; Varghese, Joseph O.
Small, Vol. 14, Issue 38
DOI: 10.1002/smll.201801483

Engineering Valley Polarization of Monolayer WS ₂ : A Physical Doping Approach
journal, February 2019

Feng, Shun; Cong, Chunxiao; Konabe, Satoru
Small, Vol. 15, Issue 12
DOI: 10.1002/smll.201805503

Environmental engineering of transition metal dichalcogenide optoelectronics
journal, June 2018

LaMountain, Trevor; Lenferink, Erik J.; Chen, Yen-Jung
Frontiers of Physics, Vol. 13, Issue 4
DOI: 10.1007/s11467-018-0795-x

Two-dimensional semiconductors in the regime of strong light-matter coupling
journal, July 2018

Schneider, Christian; Glazov, Mikhail M.; Korn, Tobias
Nature Communications, Vol. 9, Issue 1
DOI: 10.1038/s41467-018-04866-6

Long valley lifetime of dark excitons in single-layer WSe2
journal, September 2019

Tang, Yanhao; Mak, Kin Fai; Shan, Jie
Nature Communications, Vol. 10, Issue 1
DOI: 10.1038/s41467-019-12129-1

Ultrafast dynamics in van der Waals heterostructures
journal, November 2018

Jin, Chenhao; Ma, Eric Yue; Karni, Ouri
Nature Nanotechnology, Vol. 13, Issue 11
DOI: 10.1038/s41565-018-0298-5

Optical initialization of a single spin-valley in charged WSe2 quantum dots
journal, March 2019

Lu, Xin; Chen, Xiaotong; Dubey, Sudipta
Nature Nanotechnology, Vol. 14, Issue 5
DOI: 10.1038/s41565-019-0394-1

Light–valley interactions in 2D semiconductors
journal, July 2018

Mak, Kin Fai; Xiao, Di; Shan, Jie
Nature Photonics, Vol. 12, Issue 8
DOI: 10.1038/s41566-018-0204-6

Hyperfine interaction in atomically thin transition metal dichalcogenides
journal, January 2019

Avdeev, Ivan D.; Smirnov, Dmitry S.
Nanoscale Advances, Vol. 1, Issue 7
DOI: 10.1039/c8na00360b

Spectrally narrow exciton luminescence from monolayer MoS ₂ and MoSe ₂ exfoliated onto epitaxially grown hexagonal BN
journal, July 2018

Courtade, E.; Han, B.; Nakhaie, S.
Applied Physics Letters, Vol. 113, Issue 3
DOI: 10.1063/1.5033554

Control of spin and valley Hall effects in monolayer transition metal dichalcogenides by magnetic proximity effect
journal, January 2020

Da, Haixia; Song, Qi; Dong, Peng
Journal of Applied Physics, Vol. 127, Issue 2
DOI: 10.1063/1.5118327

Long-lived photoluminescence polarization of localized excitons in liquid exfoliated monolayer enriched WS ₂
journal, June 2018

Kłopotowski, Ł; Czechowski, N.; Mitioglu, A. A.
Nanotechnology, Vol. 29, Issue 33
DOI: 10.1088/1361-6528/aac73e

First-principles calculations of charge carrier mobility and conductivity in bulk semiconductors and two-dimensional materials
journal, February 2020

Poncé, Samuel; Li, Wenbin; Reichardt, Sven
Reports on Progress in Physics, Vol. 83, Issue 3
DOI: 10.1088/1361-6633/ab6a43

Spin depolarization dynamics of WSe ₂ bilayer
journal, May 2018

Niu, Binghui; Ye, Jialiang; Li, Ting
Chinese Physics B, Vol. 27, Issue 5
DOI: 10.1088/1674-1056/27/5/057202

Roadmap on finding chiral valleys: screening 2D materials for valleytronics
journal, June 2018

Bussolotti, Fabio; Kawai, Hiroyo; Ooi, Zi En
Nano Futures, Vol. 2, Issue 3
DOI: 10.1088/2399-1984/aac9d7

Topological Ising pairing states in monolayer and trilayer ${TaS}_{2}$
journal, August 2019

Chen, Weipeng; Zhu, Qingli; Zhou, Yao
Physical Review B, Vol. 100, Issue 5
DOI: 10.1103/physrevb.100.054503

Band structure of monolayer transition-metal dichalcogenides and topological properties of their nanoribbons: Next-nearest-neighbor hopping
journal, August 2018

Dias, A. C.; Qu, Fanyao; Azevedo, David L.
Physical Review B, Vol. 98, Issue 7
DOI: 10.1103/physrevb.98.075202

Ultrafast dynamics of bright and dark positive trions for valley polarization in monolayer $WS e_{2}$
journal, June 2019

Shinokita, Keisuke; Wang, Xiaofan; Miyauchi, Yuhei
Physical Review B, Vol. 99, Issue 24
DOI: 10.1103/physrevb.99.245307

Defect-Induced Modification of Low-Lying Excitons and Valley Selectivity in Monolayer Transition Metal Dichalcogenides
journal, October 2018

Refaely-Abramson, Sivan; Qiu, Diana Y.; Louie, Steven G.
Physical Review Letters, Vol. 121, Issue 16
DOI: 10.1103/physrevlett.121.167402

Theory of field-modulated spin valley orbital pseudospin physics
journal, January 2020

Chen, Feng-Wu; Wu, Yu-Shu G.
Physical Review Research, Vol. 2, Issue 1
DOI: 10.1103/physrevresearch.2.013076

Detection of thermodynamic “valley noise” in monolayer semiconductors: Access to intrinsic valley relaxation time scales
journal, March 2019

Goryca, M.; Wilson, N. P.; Dey, P.
Science Advances, Vol. 5, Issue 3
DOI: 10.1126/sciadv.aau4899

Defect-induced modification of low-lying excitons and valley selectivity in monolayer transition metal dichalcogenides
text, January 2018

Refaely-Abramson, Sivan; Qiu, Diana Y.; Louie, Steven G.
arXiv
DOI: 10.48550/arxiv.1804.05719

Two-dimensional semiconductors in the regime of strong light-matter coupling
text, January 2018

Schneider, Christian; Glazov, Mikhail M.; Korn, Tobias
arXiv
DOI: 10.48550/arxiv.1804.06771

Long valley lifetime of dark excitons in single-layer WSe2
text, January 2019

Tang, Yanhao; Mak, Kin Fai; Shan, Jie
arXiv
DOI: 10.48550/arxiv.1903.12586

First-principles calculations of charge carrier mobility and conductivity in bulk semiconductors and two-dimensional materials
text, January 2019

Poncé, Samuel; Li, Wenbin; Reichardt, Sven
arXiv
DOI: 10.48550/arxiv.1908.01733

Theory of field-modulated spin-valley-orbital pseudospin physics
text, January 2020

Chen, Feng-Wu; Wu, Yu-Shu
arXiv
DOI: 10.48550/arxiv.2001.09255

Colloquium : Excitons in atomically thin transition metal dichalcogenides
text, January 2018

Wang, Gang; Chernikov, Alexey; Glazov, Mikhail M.
Universität Regensburg
DOI: 10.5283/epub.40518

Similar Records in DOE PAGES and OSTI.GOV collections:

Experimental Observation of Hidden Berry Curvature in Inversion-Symmetric Bulk $2 H - {WSe}_{2}$

Journal Article Cho, Soohyun ; Park, Jin-Hong ; Hong, Jisook ; ... - Physical Review Letters

We investigate the hidden Berry curvature in bulk 2H-WSe₂ by utilizing the surface sensitivity of angle resolved photoemission (ARPES). The symmetry in the electronic structure of transition metal dichalcogenides is used to uniquely determine the local orbital angular momentum (OAM) contribution to the circular dichroism (CD) in ARPES. The extracted CD signals for the K and K′ valleys are almost identical, but their signs, which should be determined by the valley index, are opposite. In addition, the sign is found to be the same for the two spin-split bands, indicating that it is independent of spin state. These observed CDmore »« less
Cited by 30
https://doi.org/10.1103/PhysRevLett.121.186401

Full Text Available
Observation of ultralong valley lifetime in WSe₂/MoS₂ heterostructures

Journal Article Kim, Jonghwan ; Jin, Chenhao ; Chen, Bin ; ... - Science Advances

The valley degree of freedom in two-dimensional (2D) crystals recently emerged as a novel information carrier in addition to spin and charge. The intrinsic valley lifetime in 2D transition metal dichalcogenides (TMD) is expected to be markedly long due to the unique spin-valley locking behavior, where the intervalley scattering of the electron simultaneously requires a large momentum transfer to the opposite valley and a flip of the electron spin. However, the experimentally observed valley lifetime in 2D TMDs has been limited to tens of nanoseconds thus far. We report efficient generation of microsecond-long-lived valley polarization in WSe₂/MoS₂ heterostructures by exploitingmore »« less
Cited by 106
https://doi.org/10.1126/sciadv.1700518

Full Text Available
Infrared Interlayer Exciton Emission in ${MoS}_{2} / {WSe}_{2}$ Heterostructures

Journal Article Karni, Ouri ; Barré, Elyse ; Lau, Sze Cheung ; ... - Physical Review Letters

Here, we report light emission around 1 eV (1240 nm) from heterostructures of MoS₂ and WSe₂ transition metal dichalcogenide monolayers. We identify its origin in an interlayer exciton (ILX) by its wide spectral tunability under an out-of-plane electric field. From the static dipole moment of the state, its temperature and twist-angle dependence, and comparison with electronic structure calculations, we assign this ILX to the fundamental interlayer transition between the K valleys in this system. Our results gain access to the interlayer physics of the intrinsically incommensurate MoS₂/WSe₂ heterostructure, including moiré and valley pseudospin effects, and its integration with silicon photonicsmore »« less
Cited by 89
https://doi.org/10.1103/PhysRevLett.123.247402

Full Text Available
Van der Waals heterostructure ${Pt}_{2} {HgSe}_{3} / {CrI}_{3}$ for topological valleytronics

Journal Article Liu, Zheng ; Han, Yulei ; Ren, Yafei ; ... - Physical Review. B

We identify a valley-polarized Chern insulator in a van der Waals heterostructure, monolayer Pt₂HgSe₃/monolayer CrI₃, for potential applications with interplay between electric, magnetic, optical, and mechanical effects. The interlayer proximity magnetic coupling nearly closes the band gap of monolayer Pt₂HgSe₃, and the strong intralayer spin-orbit coupling further lifts the valley degeneracy by over 100 meV, leading to positive and negative band gaps at opposite valleys. In the valley with negative gap, the interfacial Rashba spin-orbit coupling opens a topological band gap of 17.8 meV, which is enlarged to 30.8 meV by adding a hexagonal boron nitride (h-BN) layer. We findmore »« less
https://doi.org/10.1103/physrevb.104.l121403

Full Text Available
Observation of Quantized Exciton Energies in Monolayer ${WSe}_{2}$ under a Strong Magnetic Field

Journal Article Wang, Tianmeng ; Li, Zhipeng ; Lu, Zhengguang ; ... - Physical Review. X

Quantized energy levels are one of the hallmarks of quantum mechanics at the atomic level. The manifestation of quantization in macroscopic physical systems has showcased important quantum phenomena, such as quantized conductance in (fractional) quantum Hall effects and quantized vortices in superconductors. Here we report the first experimental observation of quantized exciton energies in a macroscopic system with strong Coulomb interaction, monolayer WSe₂ crystal under a strong magnetic field. Employing helicity-resolved magnetoreflectance spectroscopy, we observe a striking ladder of plateaus as a function of the gate voltage for both exciton resonance in one valley and exciton-polariton branch in the oppositemore »« less
Cited by 18
https://doi.org/10.1103/PhysRevX.10.021024

Similar Records

Title: Gate-Controlled Spin-Valley Locking of Resident Carriers in WSe 2 Monolayers

Abstract

Citation Formats

Coupled Spin and Valley Physics in Monolayers of MoS 2 and Other Group-VI Dichalcogenides journal, May 2012

Many-Body Effects in Valleytronics: Direct Measurement of Valley Lifetimes in Single-Layer MoS 2 journal, December 2013

Valley dynamics probed through charged and neutral exciton emission in monolayer WSe 2 journal, August 2014

Exciton radiative lifetime in transition metal dichalcogenide monolayers journal, May 2016

Optically initialized robust valley-polarized holes in monolayer WSe2 journal, November 2015

Quantum-Dot Spin-State Preparation with Near-Unity Fidelity journal, April 2006

Robust optical emission polarization in MoS 2 monolayers through selective valley excitation journal, August 2012

Valley filter and valley valve in graphene journal, February 2007

Optical generation of excitonic valley coherence in monolayer WSe2 journal, August 2013

Mode Locking of Electron Spin Coherences in Singly Charged Quantum Dots journal, July 2006

Transport Theory of Monolayer Transition-Metal Dichalcogenides through Symmetry journal, July 2013

Magnetic brightening and control of dark excitons in monolayer WSe2 journal, June 2017

Van der Waals heterostructures journal, July 2013

Spin and pseudospins in layered transition metal dichalcogenides journal, April 2014

Electronic Structure, Surface Doping, and Optical Response in Epitaxial WSe 2 Thin Films journal, March 2016

Electronics and optoelectronics of two-dimensional transition metal dichalcogenides journal, November 2012

Photonics and optoelectronics of 2D semiconductor transition metal dichalcogenides journal, March 2016

Optical investigations of quantum dot spin dynamics as a function of external electric and magnetic fields journal, February 2008

Direct measurement of exciton valley coherence in monolayer WSe2 journal, February 2016

Local Hanle-effect studies of spin drift and diffusion in n:GaAs epilayers and spin-transport devices journal, September 2007

k · p theory for two-dimensional transition metal dichalcogenide semiconductors journal, April 2015

Optical excitation and control of electron spins in semiconductor quantum wells journal, April 2010

Trion fine structure and coupled spin–valley dynamics in monolayer tungsten disulfide journal, September 2016

Valley Susceptibility of an Interacting Two-Dimensional Electron System journal, November 2006

Intervalley dark trion states with spin lifetimes of 150 ns in WSe 2 journal, June 2017

Coherent Electronic Coupling in Atomically Thin MoSe 2 journal, May 2014

Mobility engineering and a metal–insulator transition in monolayer MoS2 journal, June 2013

Carrier relaxation and luminescence polarization in quantum wells journal, October 1990

Valley-Contrasting Physics in Graphene: Magnetic Moment and Topological Transport journal, December 2007

Exciton valley dynamics probed by Kerr rotation in WSe 2 monolayers journal, October 2014

Long-Lived Hole Spin/Valley Polarization Probed by Kerr Rotation in Monolayer WSe 2 journal, July 2016

Low-temperature spin relaxation in n -type GaAs journal, December 2002

Long-lived nanosecond spin relaxation and spin coherence of electrons in monolayer MoS2 and WS2 journal, August 2015

Ultrafast Coulomb-Induced Intervalley Coupling in Atomically Thin WS 2 journal, April 2016

The valley Hall effect in MoS2 transistors journal, June 2014

Direct observation of spin-polarized bulk bands in an inversion-symmetric semiconductor journal, October 2014

Observation of ultralong valley lifetime in WSe 2 /MoS 2 heterostructures journal, July 2017

Valley depolarization due to intervalley and intravalley electron-hole exchange interactions in monolayer MoS 2 journal, May 2014

Spin–flip processes and radiative decay of dark intravalley excitons in transition metal dichalcogenide monolayers journal, August 2016

Twist-tailoring Coulomb correlations in van der Waals homobilayers text, January 2020

Valley contrasting physics in graphene: magnetic moment and topological transport text, January 2007

Mobility engineering and metal-insulator transition in monolayer MoS2 text, January 2013

Optical Generation of Excitonic Valley Coherence in Monolayer WSe2 text, January 2013

k.p theory for two-dimensional transition metal dichalcogenide semiconductors text, January 2014

Long-lived nanosecond spin relaxation and spin coherence of electrons in monolayer MoS_2 and WS_2 text, January 2015

Exciton Radiative Lifetime in Transition Metal Dichalcogenide Monolayers text, January 2016

Spin-flip processes and radiative decay of dark intravalley excitons in transition metal dichalcogenide monolayers text, January 2016

Magnetic brightening and control of dark excitons in monolayer WSe2 text, January 2016

Low-temperature spin relaxation in n-type GaAs text, January 2002

Valley susceptibility of an interacting two-dimensional electron system text, January 2006

Valley filter and valley valve in graphene text, January 2006

Valleytronics: Opportunities, Challenges, and Paths Forward journal, August 2018

Engineering Valley Polarization of Monolayer WS 2 : A Physical Doping Approach journal, February 2019

Environmental engineering of transition metal dichalcogenide optoelectronics journal, June 2018

Two-dimensional semiconductors in the regime of strong light-matter coupling journal, July 2018

Long valley lifetime of dark excitons in single-layer WSe2 journal, September 2019

Ultrafast dynamics in van der Waals heterostructures journal, November 2018

Optical initialization of a single spin-valley in charged WSe2 quantum dots journal, March 2019

Light–valley interactions in 2D semiconductors journal, July 2018

Hyperfine interaction in atomically thin transition metal dichalcogenides journal, January 2019

Spectrally narrow exciton luminescence from monolayer MoS 2 and MoSe 2 exfoliated onto epitaxially grown hexagonal BN journal, July 2018

Control of spin and valley Hall effects in monolayer transition metal dichalcogenides by magnetic proximity effect journal, January 2020

Long-lived photoluminescence polarization of localized excitons in liquid exfoliated monolayer enriched WS 2 journal, June 2018

First-principles calculations of charge carrier mobility and conductivity in bulk semiconductors and two-dimensional materials journal, February 2020

Spin depolarization dynamics of WSe 2 bilayer journal, May 2018

Roadmap on finding chiral valleys: screening 2D materials for valleytronics journal, June 2018

Topological Ising pairing states in monolayer and trilayer TaS 2 journal, August 2019

Band structure of monolayer transition-metal dichalcogenides and topological properties of their nanoribbons: Next-nearest-neighbor hopping journal, August 2018

Ultrafast dynamics of bright and dark positive trions for valley polarization in monolayer WS e 2 journal, June 2019

Defect-Induced Modification of Low-Lying Excitons and Valley Selectivity in Monolayer Transition Metal Dichalcogenides journal, October 2018

Theory of field-modulated spin valley orbital pseudospin physics journal, January 2020

Detection of thermodynamic “valley noise” in monolayer semiconductors: Access to intrinsic valley relaxation time scales journal, March 2019

Defect-induced modification of low-lying excitons and valley selectivity in monolayer transition metal dichalcogenides text, January 2018

Two-dimensional semiconductors in the regime of strong light-matter coupling text, January 2018

Long valley lifetime of dark excitons in single-layer WSe2 text, January 2019

First-principles calculations of charge carrier mobility and conductivity in bulk semiconductors and two-dimensional materials text, January 2019

Theory of field-modulated spin-valley-orbital pseudospin physics text, January 2020

Title: Gate-Controlled Spin-Valley Locking of Resident Carriers in ${WSe}_{2}$ Monolayers

Coupled Spin and Valley Physics in Monolayers of ${MoS}_{2}$ and Other Group-VI Dichalcogenides
journal, May 2012

Many-Body Effects in Valleytronics: Direct Measurement of Valley Lifetimes in Single-Layer MoS ₂
journal, December 2013

Valley dynamics probed through charged and neutral exciton emission in monolayer ${WSe}_{2}$
journal, August 2014

Exciton radiative lifetime in transition metal dichalcogenide monolayers
journal, May 2016

Optically initialized robust valley-polarized holes in monolayer WSe2
journal, November 2015

Quantum-Dot Spin-State Preparation with Near-Unity Fidelity
journal, April 2006

Robust optical emission polarization in MoS $_{2}$ monolayers through selective valley excitation
journal, August 2012

Valley filter and valley valve in graphene
journal, February 2007

Optical generation of excitonic valley coherence in monolayer WSe2
journal, August 2013

Mode Locking of Electron Spin Coherences in Singly Charged Quantum Dots
journal, July 2006

Transport Theory of Monolayer Transition-Metal Dichalcogenides through Symmetry
journal, July 2013

Magnetic brightening and control of dark excitons in monolayer WSe2
journal, June 2017

Van der Waals heterostructures
journal, July 2013

Spin and pseudospins in layered transition metal dichalcogenides
journal, April 2014

Electronic Structure, Surface Doping, and Optical Response in Epitaxial WSe ₂ Thin Films
journal, March 2016

Electronics and optoelectronics of two-dimensional transition metal dichalcogenides
journal, November 2012

Photonics and optoelectronics of 2D semiconductor transition metal dichalcogenides
journal, March 2016

Optical investigations of quantum dot spin dynamics as a function of external electric and magnetic fields
journal, February 2008

Direct measurement of exciton valley coherence in monolayer WSe2
journal, February 2016

Local Hanle-effect studies of spin drift and diffusion in n:GaAs epilayers and spin-transport devices
journal, September 2007

k · p theory for two-dimensional transition metal dichalcogenide semiconductors
journal, April 2015

Optical excitation and control of electron spins in semiconductor quantum wells
journal, April 2010

Trion fine structure and coupled spin–valley dynamics in monolayer tungsten disulfide
journal, September 2016

Valley Susceptibility of an Interacting Two-Dimensional Electron System
journal, November 2006

Intervalley dark trion states with spin lifetimes of 150 ns in ${WSe}_{2}$
journal, June 2017

Coherent Electronic Coupling in Atomically Thin ${MoSe}_{2}$
journal, May 2014

Mobility engineering and a metal–insulator transition in monolayer MoS2
journal, June 2013

Carrier relaxation and luminescence polarization in quantum wells
journal, October 1990

Valley-Contrasting Physics in Graphene: Magnetic Moment and Topological Transport
journal, December 2007

Exciton valley dynamics probed by Kerr rotation in ${WSe}_{2}$ monolayers
journal, October 2014

Long-Lived Hole Spin/Valley Polarization Probed by Kerr Rotation in Monolayer WSe ₂
journal, July 2016

Low-temperature spin relaxation in n -type GaAs
journal, December 2002

Long-lived nanosecond spin relaxation and spin coherence of electrons in monolayer MoS2 and WS2
journal, August 2015

Ultrafast Coulomb-Induced Intervalley Coupling in Atomically Thin WS ₂
journal, April 2016

The valley Hall effect in MoS2 transistors
journal, June 2014

Direct observation of spin-polarized bulk bands in an inversion-symmetric semiconductor
journal, October 2014

Observation of ultralong valley lifetime in WSe ₂ /MoS ₂ heterostructures
journal, July 2017

Valley depolarization due to intervalley and intravalley electron-hole exchange interactions in monolayer ${MoS}_{2}$
journal, May 2014

Spin–flip processes and radiative decay of dark intravalley excitons in transition metal dichalcogenide monolayers
journal, August 2016

Twist-tailoring Coulomb correlations in van der Waals homobilayers
text, January 2020

Valley contrasting physics in graphene: magnetic moment and topological transport
text, January 2007

Mobility engineering and metal-insulator transition in monolayer MoS2
text, January 2013

Optical Generation of Excitonic Valley Coherence in Monolayer WSe2
text, January 2013

k.p theory for two-dimensional transition metal dichalcogenide semiconductors
text, January 2014

Long-lived nanosecond spin relaxation and spin coherence of electrons in monolayer MoS_2 and WS_2
text, January 2015

Exciton Radiative Lifetime in Transition Metal Dichalcogenide Monolayers
text, January 2016

Spin-flip processes and radiative decay of dark intravalley excitons in transition metal dichalcogenide monolayers
text, January 2016

Magnetic brightening and control of dark excitons in monolayer WSe2
text, January 2016

Low-temperature spin relaxation in n-type GaAs
text, January 2002

Valley susceptibility of an interacting two-dimensional electron system
text, January 2006

Valley filter and valley valve in graphene
text, January 2006

Valleytronics: Opportunities, Challenges, and Paths Forward
journal, August 2018

Engineering Valley Polarization of Monolayer WS ₂ : A Physical Doping Approach
journal, February 2019

Environmental engineering of transition metal dichalcogenide optoelectronics
journal, June 2018

Two-dimensional semiconductors in the regime of strong light-matter coupling
journal, July 2018

Long valley lifetime of dark excitons in single-layer WSe2
journal, September 2019

Ultrafast dynamics in van der Waals heterostructures
journal, November 2018

Optical initialization of a single spin-valley in charged WSe2 quantum dots
journal, March 2019

Light–valley interactions in 2D semiconductors
journal, July 2018

Hyperfine interaction in atomically thin transition metal dichalcogenides
journal, January 2019

Spectrally narrow exciton luminescence from monolayer MoS ₂ and MoSe ₂ exfoliated onto epitaxially grown hexagonal BN
journal, July 2018

Control of spin and valley Hall effects in monolayer transition metal dichalcogenides by magnetic proximity effect
journal, January 2020

Long-lived photoluminescence polarization of localized excitons in liquid exfoliated monolayer enriched WS ₂
journal, June 2018

First-principles calculations of charge carrier mobility and conductivity in bulk semiconductors and two-dimensional materials
journal, February 2020

Spin depolarization dynamics of WSe ₂ bilayer
journal, May 2018

Roadmap on finding chiral valleys: screening 2D materials for valleytronics
journal, June 2018

Topological Ising pairing states in monolayer and trilayer ${TaS}_{2}$
journal, August 2019

Band structure of monolayer transition-metal dichalcogenides and topological properties of their nanoribbons: Next-nearest-neighbor hopping
journal, August 2018

Ultrafast dynamics of bright and dark positive trions for valley polarization in monolayer $WS e_{2}$
journal, June 2019

Defect-Induced Modification of Low-Lying Excitons and Valley Selectivity in Monolayer Transition Metal Dichalcogenides
journal, October 2018

Theory of field-modulated spin valley orbital pseudospin physics
journal, January 2020

Detection of thermodynamic “valley noise” in monolayer semiconductors: Access to intrinsic valley relaxation time scales
journal, March 2019

Defect-induced modification of low-lying excitons and valley selectivity in monolayer transition metal dichalcogenides
text, January 2018

Two-dimensional semiconductors in the regime of strong light-matter coupling
text, January 2018

Long valley lifetime of dark excitons in single-layer WSe2
text, January 2019

First-principles calculations of charge carrier mobility and conductivity in bulk semiconductors and two-dimensional materials
text, January 2019

Theory of field-modulated spin-valley-orbital pseudospin physics
text, January 2020

Colloquium : Excitons in atomically thin transition metal dichalcogenides
text, January 2018