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Title: Thermal and thermoelectric transport measurements of an individual boron arsenide microstructure

Recent first principles calculations have predicted that boron arsenide (BAs) can possess an unexpectedly high thermal conductivity that depends sensitively on the crystal size and defect concentration. However, few experimental results have been obtained to verify these predictions. In the present work, we report four-probe thermal and thermoelectric transport measurements of an individual BAs microstructure that was synthesized via a vapor transport method. The measured thermal conductivity was found to decrease slightly with temperature in the range between 250K and 350 K. The temperature dependence suggests that the extrinsic phonon scattering processes play an important role in addition to intrinsic phonon-phonon scattering. The room temperature value of (186646) Wm -1K -1 is higher than that of bulk silicon but still a factor of four lower than the calculated result for a defect-free, non-degenerate BAs rod with a similar diameter of 1.15 μm. The measured p-type Seebeck coefficient and thermoelectric power factor are comparable to those of bismuth telluride, which is a commonly used thermoelectric material. In conclusion, the foregoing results also suggest that it is necessary to not only reduce defect and boundary scatterings but also to better understand and control the electron scattering of phonons in order to achievemore » the predicted ultrahigh intrinsic lattice thermal conductivity of BAs.« less
Authors:
 [1] ;  [2] ; ORCiD logo [1] ;  [2] ;  [1] ;  [2] ; ORCiD logo [1]
  1. Univ. of Texas, Austin, TX (United States). Dept. of Mechanical Engineering
  2. Univ. of Texas, Austin, TX (United States). Dept. of Chemistry
Publication Date:
Grant/Contract Number:
FG02-07ER46377
Type:
Accepted Manuscript
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 108; Journal Issue: 20; Journal ID: ISSN 0003-6951
Publisher:
American Institute of Physics (AIP)
Research Org:
Univ. of Texas, Austin, TX (United States)
Sponsoring Org:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CHEMISTRY
OSTI Identifier:
1471111
Alternate Identifier(s):
OSTI ID: 1253660

Kim, Jaehyun, Evans, Daniel A., Sellan, Daniel P., Williams, Owen M., Ou, Eric, Cowley, Alan H., and Shi, Li. Thermal and thermoelectric transport measurements of an individual boron arsenide microstructure. United States: N. p., Web. doi:10.1063/1.4950970.
Kim, Jaehyun, Evans, Daniel A., Sellan, Daniel P., Williams, Owen M., Ou, Eric, Cowley, Alan H., & Shi, Li. Thermal and thermoelectric transport measurements of an individual boron arsenide microstructure. United States. doi:10.1063/1.4950970.
Kim, Jaehyun, Evans, Daniel A., Sellan, Daniel P., Williams, Owen M., Ou, Eric, Cowley, Alan H., and Shi, Li. 2016. "Thermal and thermoelectric transport measurements of an individual boron arsenide microstructure". United States. doi:10.1063/1.4950970. https://www.osti.gov/servlets/purl/1471111.
@article{osti_1471111,
title = {Thermal and thermoelectric transport measurements of an individual boron arsenide microstructure},
author = {Kim, Jaehyun and Evans, Daniel A. and Sellan, Daniel P. and Williams, Owen M. and Ou, Eric and Cowley, Alan H. and Shi, Li},
abstractNote = {Recent first principles calculations have predicted that boron arsenide (BAs) can possess an unexpectedly high thermal conductivity that depends sensitively on the crystal size and defect concentration. However, few experimental results have been obtained to verify these predictions. In the present work, we report four-probe thermal and thermoelectric transport measurements of an individual BAs microstructure that was synthesized via a vapor transport method. The measured thermal conductivity was found to decrease slightly with temperature in the range between 250K and 350 K. The temperature dependence suggests that the extrinsic phonon scattering processes play an important role in addition to intrinsic phonon-phonon scattering. The room temperature value of (186646) Wm-1K-1 is higher than that of bulk silicon but still a factor of four lower than the calculated result for a defect-free, non-degenerate BAs rod with a similar diameter of 1.15 μm. The measured p-type Seebeck coefficient and thermoelectric power factor are comparable to those of bismuth telluride, which is a commonly used thermoelectric material. In conclusion, the foregoing results also suggest that it is necessary to not only reduce defect and boundary scatterings but also to better understand and control the electron scattering of phonons in order to achieve the predicted ultrahigh intrinsic lattice thermal conductivity of BAs.},
doi = {10.1063/1.4950970},
journal = {Applied Physics Letters},
number = 20,
volume = 108,
place = {United States},
year = {2016},
month = {5}
}