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Title: Tutorial: Defects in semiconductors—Combining experiment and theory

Point defects affect or even completely determine physical and chemical properties of semiconductors. Characterization of point defects based on experimental techniques alone is often inconclusive. In such cases, the combination of experiment and theory is crucial to gain understanding of the system studied. Here in this tutorial, we explain how and when such comparison provides new understanding of the defect physics. More specifically, we focus on processes that can be analyzed or understood in terms of configuration coordinate diagrams of defects in their different charge states. These processes include light absorption, luminescence, and nonradiative capture of charge carriers. Recent theoretical developments to describe these processes are reviewed.
Authors:
 [1] ; ORCiD logo [2] ; ORCiD logo [3]
  1. Center for Physical Sciences and Technology, Vilnius, (Lithuania)
  2. Washington State Univ., Pullman, WA (United States). Dept. of Physics and Astronomy
  3. Univ. of California, Santa Barbara, CA (United States). Materials Dept.
Publication Date:
Grant/Contract Number:
SC0010689; FG02-07ER46386
Type:
Accepted Manuscript
Journal Name:
Journal of Applied Physics
Additional Journal Information:
Journal Volume: 119; Journal Issue: 18; Journal ID: ISSN 0021-8979
Publisher:
American Institute of Physics (AIP)
Research Org:
Univ. of California, Santa Barbara, CA (United States); Washington State Univ., Pullman, WA (United States)
Sponsoring Org:
USDOE Office of Science (SC)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE
OSTI Identifier:
1471061
Alternate Identifier(s):
OSTI ID: 1252795

Alkauskas, Audrius, McCluskey, Matthew D., and Van de Walle, Chris G.. Tutorial: Defects in semiconductors—Combining experiment and theory. United States: N. p., Web. doi:10.1063/1.4948245.
Alkauskas, Audrius, McCluskey, Matthew D., & Van de Walle, Chris G.. Tutorial: Defects in semiconductors—Combining experiment and theory. United States. doi:10.1063/1.4948245.
Alkauskas, Audrius, McCluskey, Matthew D., and Van de Walle, Chris G.. 2016. "Tutorial: Defects in semiconductors—Combining experiment and theory". United States. doi:10.1063/1.4948245. https://www.osti.gov/servlets/purl/1471061.
@article{osti_1471061,
title = {Tutorial: Defects in semiconductors—Combining experiment and theory},
author = {Alkauskas, Audrius and McCluskey, Matthew D. and Van de Walle, Chris G.},
abstractNote = {Point defects affect or even completely determine physical and chemical properties of semiconductors. Characterization of point defects based on experimental techniques alone is often inconclusive. In such cases, the combination of experiment and theory is crucial to gain understanding of the system studied. Here in this tutorial, we explain how and when such comparison provides new understanding of the defect physics. More specifically, we focus on processes that can be analyzed or understood in terms of configuration coordinate diagrams of defects in their different charge states. These processes include light absorption, luminescence, and nonradiative capture of charge carriers. Recent theoretical developments to describe these processes are reviewed.},
doi = {10.1063/1.4948245},
journal = {Journal of Applied Physics},
number = 18,
volume = 119,
place = {United States},
year = {2016},
month = {5}
}