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Title: Analysis of Performance Instabilities of Hafnia-Based Ferroelectrics Using Modulus Spectroscopy and Thermally Stimulated Depolarization Currents

Abstract

The discovery of the ferroelectric orthorhombic phase in doped hafnia films has sparked immense research efforts. Presently, a major obstacle for hafnia's use in high-endurance memory applications like nonvolatile random-access memories is its unstable ferroelectric response during field cycling. Different mechanisms are proposed to explain this instability including field-induced phase change, electron trapping, and oxygen vacancy diffusion. However, none of these is able to fully explain the complete behavior and interdependencies of these phenomena. Up to now, no complete root cause for fatigue, wake-up, and imprint effects is presented. In this study, the first evidence for the presence of singly and doubly positively charged oxygen vacancies in hafnia–zirconia films using thermally stimulated currents and impedance spectroscopy is presented. Moreover, it is shown that interaction of these defects with electrons at the interfaces to the electrodes may cause the observed instability of the ferroelectric performance.

Authors:
ORCiD logo [1];  [2]; ORCiD logo [2];  [3];  [4];  [5];  [1]; ORCiD logo [3]; ORCiD logo [5]; ORCiD logo [1]
  1. NaMLab gGmbH, Dresden (Germany)
  2. Lab. de Céramique, Lausanne (Switzerland)
  3. North Carolina State Univ., Raleigh, NC (United States)
  4. Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
  5. Dresden Univ. of Technology (Germany)
Publication Date:
Research Org.:
Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1470841
Grant/Contract Number:  
AC05-00OR22725
Resource Type:
Accepted Manuscript
Journal Name:
Advanced Electronic Materials
Additional Journal Information:
Journal Volume: 4; Journal Issue: 3; Journal ID: ISSN 2199-160X
Publisher:
Wiley
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE

Citation Formats

Fengler, Franz P. G., Nigon, Robin, Muralt, Paul, Grimley, Everett D., Sang, Xiahan, Sessi, Violetta, Hentschel, Rico, LeBeau, James M., Mikolajick, Thomas, and Schroeder, Uwe. Analysis of Performance Instabilities of Hafnia-Based Ferroelectrics Using Modulus Spectroscopy and Thermally Stimulated Depolarization Currents. United States: N. p., 2018. Web. doi:10.1002/aelm.201700547.
Fengler, Franz P. G., Nigon, Robin, Muralt, Paul, Grimley, Everett D., Sang, Xiahan, Sessi, Violetta, Hentschel, Rico, LeBeau, James M., Mikolajick, Thomas, & Schroeder, Uwe. Analysis of Performance Instabilities of Hafnia-Based Ferroelectrics Using Modulus Spectroscopy and Thermally Stimulated Depolarization Currents. United States. doi:10.1002/aelm.201700547.
Fengler, Franz P. G., Nigon, Robin, Muralt, Paul, Grimley, Everett D., Sang, Xiahan, Sessi, Violetta, Hentschel, Rico, LeBeau, James M., Mikolajick, Thomas, and Schroeder, Uwe. Thu . "Analysis of Performance Instabilities of Hafnia-Based Ferroelectrics Using Modulus Spectroscopy and Thermally Stimulated Depolarization Currents". United States. doi:10.1002/aelm.201700547. https://www.osti.gov/servlets/purl/1470841.
@article{osti_1470841,
title = {Analysis of Performance Instabilities of Hafnia-Based Ferroelectrics Using Modulus Spectroscopy and Thermally Stimulated Depolarization Currents},
author = {Fengler, Franz P. G. and Nigon, Robin and Muralt, Paul and Grimley, Everett D. and Sang, Xiahan and Sessi, Violetta and Hentschel, Rico and LeBeau, James M. and Mikolajick, Thomas and Schroeder, Uwe},
abstractNote = {The discovery of the ferroelectric orthorhombic phase in doped hafnia films has sparked immense research efforts. Presently, a major obstacle for hafnia's use in high-endurance memory applications like nonvolatile random-access memories is its unstable ferroelectric response during field cycling. Different mechanisms are proposed to explain this instability including field-induced phase change, electron trapping, and oxygen vacancy diffusion. However, none of these is able to fully explain the complete behavior and interdependencies of these phenomena. Up to now, no complete root cause for fatigue, wake-up, and imprint effects is presented. In this study, the first evidence for the presence of singly and doubly positively charged oxygen vacancies in hafnia–zirconia films using thermally stimulated currents and impedance spectroscopy is presented. Moreover, it is shown that interaction of these defects with electrons at the interfaces to the electrodes may cause the observed instability of the ferroelectric performance.},
doi = {10.1002/aelm.201700547},
journal = {Advanced Electronic Materials},
number = 3,
volume = 4,
place = {United States},
year = {2018},
month = {2}
}

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