Analysis of Performance Instabilities of Hafnia-Based Ferroelectrics Using Modulus Spectroscopy and Thermally Stimulated Depolarization Currents

Fengler, Franz P.  G.; Nigon, Robin; Muralt, Paul; Grimley, Everett D.; Sang, Xiahan; Sessi, Violetta; Hentschel, Rico; LeBeau, James M.; Mikolajick, Thomas; Schroeder, Uwe

doi:10.1002/aelm.201700547

Title: Analysis of Performance Instabilities of Hafnia-Based Ferroelectrics Using Modulus Spectroscopy and Thermally Stimulated Depolarization Currents

Journal Article · 01 February 2018 · Advanced Electronic Materials

DOI: https://doi.org/10.1002/aelm.201700547 · OSTI ID:1470841

^[1]; Nigon, Robin ^[2];

^[2]; Grimley, Everett D. ^[3]; Sang, Xiahan ^[4]; Sessi, Violetta ^[5]; Hentschel, Rico ^[1];

^[3];

^[5];

^[1]

NaMLab gGmbH, Dresden (Germany)
Lab. de Céramique, Lausanne (Switzerland)
North Carolina State Univ., Raleigh, NC (United States)
Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
Dresden Univ. of Technology (Germany)

The discovery of the ferroelectric orthorhombic phase in doped hafnia films has sparked immense research efforts. Presently, a major obstacle for hafnia's use in high-endurance memory applications like nonvolatile random-access memories is its unstable ferroelectric response during field cycling. Different mechanisms are proposed to explain this instability including field-induced phase change, electron trapping, and oxygen vacancy diffusion. However, none of these is able to fully explain the complete behavior and interdependencies of these phenomena. Up to now, no complete root cause for fatigue, wake-up, and imprint effects is presented. In this study, the first evidence for the presence of singly and doubly positively charged oxygen vacancies in hafnia–zirconia films using thermally stimulated currents and impedance spectroscopy is presented. Moreover, it is shown that interaction of these defects with electrons at the interfaces to the electrodes may cause the observed instability of the ferroelectric performance.

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Research Organization:: Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)

Sponsoring Organization:: USDOE

Grant/Contract Number:: AC05-00OR22725

OSTI ID:: 1470841

Journal Information:: Advanced Electronic Materials, Journal Name: Advanced Electronic Materials Journal Issue: 3 Vol. 4; ISSN 2199-160X

Publisher:: WileyCopyright Statement

Country of Publication:: United States

Language:: English

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Investigating structural features of Ba and Zr co-substituted strontium bismuth tantalate thin films Bozgeyik, Mehmet S. Bulletin of Materials Science, Vol. 42, Issue 2 https://doi.org/10.1007/s12034-018-1723-y	journal	February 2019
Polarization-dependent electric potential distribution across nanoscale ferroelectric Hf _0.5 Zr _0.5 O ₂ in functional memory capacitors Matveyev, Yury; Mikheev, Vitalii; Negrov, Dmitry Nanoscale, Vol. 11, Issue 42 https://doi.org/10.1039/c9nr05904k	journal	January 2019
Pyroelectricity of silicon-doped hafnium oxide thin films Jachalke, Sven; Schenk, Tony; Park, Min Hyuk Applied Physics Letters, Vol. 112, Issue 14 https://doi.org/10.1063/1.5023390	journal	April 2018
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Model of dielectric breakdown in hafnia-based ferroelectric capacitors Xue, Kan-Hao; Su, Hai-Lei; Li, Yi Journal of Applied Physics, Vol. 124, Issue 2 https://doi.org/10.1063/1.5031491	journal	July 2018
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