Tunable Noncollinear Antiferromagnetic Resistive Memory through Oxide Superlattice Design
Abstract
Antiferromagnets (AFMs) have recently gathered a large amount of attention as a potential replacement for ferromagnets (FMs) in spintronic devices due to their lack of stray magnetic fields, invisibility to external magnetic probes, and faster magneti- zation dynamics. Their development into a practical technology, however, has been hampered by the small number of materials where the antiferromagnetic state can be both controlled and read out. We show here, that by relaxing the strict criterion on pure antiferromagnetism, we can engineer a new class of magnetic materials that 1 overcome these limitations. This is accomplished by stabilizing a non-collinear mag- netic phase in LaNiO3/La2/3Sr1/3MnO3 superlattices. This state can be continuously tuned between AFM and FM coupling through varying either superlattice spacing, strain, applied magnetic field, or temperature. By using this new “knob” to tune magnetic ordering, we take a nanoscale materials-by-design approach to engineering ferromagnetic-like controllability into antiferromagnetic synthetic magnetic structures. This approach can be used to trade-off between the favorable and unfavorable proper- ties of FMs and AFMs when designing realistic resistive antiferromagnetic memories. We demonstrate a memory device in one such superlattice, where the magnetic state of the non-collinear antiferromagnet is reversibly switched between different orientations using a smallmore »
- Authors:
-
- Argonne National Lab. (ANL), Argonne, IL (United States). Materials Science Division; Harvard Univ., Cambridge, MA (United States). Dept. of Physics
- Argonne National Lab. (ANL), Argonne, IL (United States). Materials Science Division; Univ. of Rochester, NY (United States). Dept. of Electrical and Computer Engineering
- National Inst. of Standards and Technology (NIST), Gaithersburg, MD (United States). NIST Center for Neutron Research
- Argonne National Lab. (ANL), Argonne, IL (United States). Materials Science Division and Nanoscience and Technology Division
- Publication Date:
- Research Org.:
- Argonne National Laboratory (ANL), Argonne, IL (United States)
- Sponsoring Org.:
- USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22). Materials Sciences & Engineering Division
- OSTI Identifier:
- 1470770
- Alternate Identifier(s):
- OSTI ID: 1435004
- Grant/Contract Number:
- AC02-06CH11357
- Resource Type:
- Accepted Manuscript
- Journal Name:
- Physical Review Applied
- Additional Journal Information:
- Journal Volume: 9; Journal Issue: 4; Journal ID: ISSN 2331-7019
- Publisher:
- American Physical Society (APS)
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE; 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; antiferromagnetism; magnetic phase transitions; spintronics; devices; manganites; noncollinear magnets; superlattices
Citation Formats
Hoffman, Jason D., Wu, Stephen M., Kirby, Brian J., and Bhattacharya, Anand. Tunable Noncollinear Antiferromagnetic Resistive Memory through Oxide Superlattice Design. United States: N. p., 2018.
Web. doi:10.1103/PhysRevApplied.9.044041.
Hoffman, Jason D., Wu, Stephen M., Kirby, Brian J., & Bhattacharya, Anand. Tunable Noncollinear Antiferromagnetic Resistive Memory through Oxide Superlattice Design. United States. https://doi.org/10.1103/PhysRevApplied.9.044041
Hoffman, Jason D., Wu, Stephen M., Kirby, Brian J., and Bhattacharya, Anand. Fri .
"Tunable Noncollinear Antiferromagnetic Resistive Memory through Oxide Superlattice Design". United States. https://doi.org/10.1103/PhysRevApplied.9.044041. https://www.osti.gov/servlets/purl/1470770.
@article{osti_1470770,
title = {Tunable Noncollinear Antiferromagnetic Resistive Memory through Oxide Superlattice Design},
author = {Hoffman, Jason D. and Wu, Stephen M. and Kirby, Brian J. and Bhattacharya, Anand},
abstractNote = {Antiferromagnets (AFMs) have recently gathered a large amount of attention as a potential replacement for ferromagnets (FMs) in spintronic devices due to their lack of stray magnetic fields, invisibility to external magnetic probes, and faster magneti- zation dynamics. Their development into a practical technology, however, has been hampered by the small number of materials where the antiferromagnetic state can be both controlled and read out. We show here, that by relaxing the strict criterion on pure antiferromagnetism, we can engineer a new class of magnetic materials that 1 overcome these limitations. This is accomplished by stabilizing a non-collinear mag- netic phase in LaNiO3/La2/3Sr1/3MnO3 superlattices. This state can be continuously tuned between AFM and FM coupling through varying either superlattice spacing, strain, applied magnetic field, or temperature. By using this new “knob” to tune magnetic ordering, we take a nanoscale materials-by-design approach to engineering ferromagnetic-like controllability into antiferromagnetic synthetic magnetic structures. This approach can be used to trade-off between the favorable and unfavorable proper- ties of FMs and AFMs when designing realistic resistive antiferromagnetic memories. We demonstrate a memory device in one such superlattice, where the magnetic state of the non-collinear antiferromagnet is reversibly switched between different orientations using a small magnetic field and read out in real time with anisotropic magnetoresistance measurements.},
doi = {10.1103/PhysRevApplied.9.044041},
journal = {Physical Review Applied},
number = 4,
volume = 9,
place = {United States},
year = {Fri Apr 27 00:00:00 EDT 2018},
month = {Fri Apr 27 00:00:00 EDT 2018}
}
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Figures / Tables:
Figure 1: Schematic depiction of tunable non-collinear magnetic structures and device. (a) An example of continuous tunability between a fully antiferromagnetic structure to a fully ferromagnetic structure, with non-collinear magnetism serving as the intermediate magnetic structure. (b) A patterned [(LaNiO3)x3/(La2/3Sr1/3MnO3)x9]n superlattice grown on SrTiO3 (001), built into a Hall-bar devicemore »
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