Tunable Noncollinear Antiferromagnetic Resistive Memory through Oxide Superlattice Design

Hoffman, Jason D.; Wu, Stephen M.; Kirby, Brian J.; Bhattacharya, Anand

doi:10.1103/PhysRevApplied.9.044041

Title: Tunable Noncollinear Antiferromagnetic Resistive Memory through Oxide Superlattice Design

Journal Article · 27 April 2018 · Physical Review Applied

DOI: https://doi.org/10.1103/PhysRevApplied.9.044041 · OSTI ID:1470770

Hoffman, Jason D. ^[1]; Wu, Stephen M. ^[2]; Kirby, Brian J. ^[3]; Bhattacharya, Anand ^[4]

Argonne National Lab. (ANL), Argonne, IL (United States). Materials Science Division; Harvard Univ., Cambridge, MA (United States). Dept. of Physics
Argonne National Lab. (ANL), Argonne, IL (United States). Materials Science Division; Univ. of Rochester, NY (United States). Dept. of Electrical and Computer Engineering
National Inst. of Standards and Technology (NIST), Gaithersburg, MD (United States). NIST Center for Neutron Research
Argonne National Lab. (ANL), Argonne, IL (United States). Materials Science Division and Nanoscience and Technology Division

Antiferromagnets (AFMs) have recently gathered a large amount of attention as a potential replacement for ferromagnets (FMs) in spintronic devices due to their lack of stray magnetic fields, invisibility to external magnetic probes, and faster magneti- zation dynamics. Their development into a practical technology, however, has been hampered by the small number of materials where the antiferromagnetic state can be both controlled and read out. We show here, that by relaxing the strict criterion on pure antiferromagnetism, we can engineer a new class of magnetic materials that 1 overcome these limitations. This is accomplished by stabilizing a non-collinear mag- netic phase in LaNiO₃/La_2/3Sr_1/3MnO₃ superlattices. This state can be continuously tuned between AFM and FM coupling through varying either superlattice spacing, strain, applied magnetic field, or temperature. By using this new “knob” to tune magnetic ordering, we take a nanoscale materials-by-design approach to engineering ferromagnetic-like controllability into antiferromagnetic synthetic magnetic structures. This approach can be used to trade-off between the favorable and unfavorable proper- ties of FMs and AFMs when designing realistic resistive antiferromagnetic memories. We demonstrate a memory device in one such superlattice, where the magnetic state of the non-collinear antiferromagnet is reversibly switched between different orientations using a small magnetic field and read out in real time with anisotropic magnetoresistance measurements.

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Research Organization:: Argonne National Laboratory (ANL), Argonne, IL (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22). Materials Sciences & Engineering Division

Grant/Contract Number:: AC02-06CH11357

OSTI ID:: 1470770

Alternate ID(s):: OSTI ID: 1435004

Journal Information:: Physical Review Applied, Vol. 9, Issue 4; ISSN 2331-7019

Publisher:: American Physical Society (APS)Copyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 18 works

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Huge magnetoresistance and ultrasharp metamagnetic transition in polycrystalline Sm0.5Ca0.25Sr0.25MnO3 Banik, Sanjib; Das, Kalipada; Paramanik, Tapas NPG Asia Materials, Vol. 10, Issue 9 https://doi.org/10.1038/s41427-018-0085-7	journal	September 2018
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Huge magnetoresistance and ultra-sharp metamagnetic transition in polycrystalline ${Sm_{0.5}Ca_{0.25}Sr_{0.25}MnO_3}$ Banik, Sanjib; Das, Kalipada; Paramanik, Tapas arXiv https://doi.org/10.48550/arxiv.1710.03007	preprint	January 2017
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36 MATERIALS SCIENCE
71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
antiferromagnetism
magnetic phase transitions
spintronics
devices
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noncollinear magnets
superlattices