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Title: Tunable Noncollinear Antiferromagnetic Resistive Memory through Oxide Superlattice Design

Abstract

Antiferromagnets (AFMs) have recently gathered a large amount of attention as a potential replacement for ferromagnets (FMs) in spintronic devices due to their lack of stray magnetic fields, invisibility to external magnetic probes, and faster magneti- zation dynamics. Their development into a practical technology, however, has been hampered by the small number of materials where the antiferromagnetic state can be both controlled and read out. We show here, that by relaxing the strict criterion on pure antiferromagnetism, we can engineer a new class of magnetic materials that 1 overcome these limitations. This is accomplished by stabilizing a non-collinear mag- netic phase in LaNiO3/La2/3Sr1/3MnO3 superlattices. This state can be continuously tuned between AFM and FM coupling through varying either superlattice spacing, strain, applied magnetic field, or temperature. By using this new “knob” to tune magnetic ordering, we take a nanoscale materials-by-design approach to engineering ferromagnetic-like controllability into antiferromagnetic synthetic magnetic structures. This approach can be used to trade-off between the favorable and unfavorable proper- ties of FMs and AFMs when designing realistic resistive antiferromagnetic memories. We demonstrate a memory device in one such superlattice, where the magnetic state of the non-collinear antiferromagnet is reversibly switched between different orientations using a smallmore » magnetic field and read out in real time with anisotropic magnetoresistance measurements.« less

Authors:
 [1];  [2];  [3];  [4]
  1. Argonne National Lab. (ANL), Argonne, IL (United States). Materials Science Division; Harvard Univ., Cambridge, MA (United States). Dept. of Physics
  2. Argonne National Lab. (ANL), Argonne, IL (United States). Materials Science Division; Univ. of Rochester, NY (United States). Dept. of Electrical and Computer Engineering
  3. National Inst. of Standards and Technology (NIST), Gaithersburg, MD (United States). NIST Center for Neutron Research
  4. Argonne National Lab. (ANL), Argonne, IL (United States). Materials Science Division and Nanoscience and Technology Division
Publication Date:
Research Org.:
Argonne National Lab. (ANL), Argonne, IL (United States)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22). Materials Sciences & Engineering Division
OSTI Identifier:
1470770
Alternate Identifier(s):
OSTI ID: 1435004
Grant/Contract Number:  
AC02-06CH11357
Resource Type:
Accepted Manuscript
Journal Name:
Physical Review Applied
Additional Journal Information:
Journal Volume: 9; Journal Issue: 4; Journal ID: ISSN 2331-7019
Publisher:
American Physical Society (APS)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; antiferromagnetism; magnetic phase transitions; spintronics; devices; manganites; noncollinear magnets; superlattices

Citation Formats

Hoffman, Jason D., Wu, Stephen M., Kirby, Brian J., and Bhattacharya, Anand. Tunable Noncollinear Antiferromagnetic Resistive Memory through Oxide Superlattice Design. United States: N. p., 2018. Web. doi:10.1103/PhysRevApplied.9.044041.
Hoffman, Jason D., Wu, Stephen M., Kirby, Brian J., & Bhattacharya, Anand. Tunable Noncollinear Antiferromagnetic Resistive Memory through Oxide Superlattice Design. United States. doi:10.1103/PhysRevApplied.9.044041.
Hoffman, Jason D., Wu, Stephen M., Kirby, Brian J., and Bhattacharya, Anand. Fri . "Tunable Noncollinear Antiferromagnetic Resistive Memory through Oxide Superlattice Design". United States. doi:10.1103/PhysRevApplied.9.044041. https://www.osti.gov/servlets/purl/1470770.
@article{osti_1470770,
title = {Tunable Noncollinear Antiferromagnetic Resistive Memory through Oxide Superlattice Design},
author = {Hoffman, Jason D. and Wu, Stephen M. and Kirby, Brian J. and Bhattacharya, Anand},
abstractNote = {Antiferromagnets (AFMs) have recently gathered a large amount of attention as a potential replacement for ferromagnets (FMs) in spintronic devices due to their lack of stray magnetic fields, invisibility to external magnetic probes, and faster magneti- zation dynamics. Their development into a practical technology, however, has been hampered by the small number of materials where the antiferromagnetic state can be both controlled and read out. We show here, that by relaxing the strict criterion on pure antiferromagnetism, we can engineer a new class of magnetic materials that 1 overcome these limitations. This is accomplished by stabilizing a non-collinear mag- netic phase in LaNiO3/La2/3Sr1/3MnO3 superlattices. This state can be continuously tuned between AFM and FM coupling through varying either superlattice spacing, strain, applied magnetic field, or temperature. By using this new “knob” to tune magnetic ordering, we take a nanoscale materials-by-design approach to engineering ferromagnetic-like controllability into antiferromagnetic synthetic magnetic structures. This approach can be used to trade-off between the favorable and unfavorable proper- ties of FMs and AFMs when designing realistic resistive antiferromagnetic memories. We demonstrate a memory device in one such superlattice, where the magnetic state of the non-collinear antiferromagnet is reversibly switched between different orientations using a small magnetic field and read out in real time with anisotropic magnetoresistance measurements.},
doi = {10.1103/PhysRevApplied.9.044041},
journal = {Physical Review Applied},
number = 4,
volume = 9,
place = {United States},
year = {2018},
month = {4}
}

Journal Article:
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Cited by: 4 works
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Figures / Tables:

Figure 1 Figure 1: Schematic depiction of tunable non-collinear magnetic structures and device. (a) An example of continuous tunability between a fully antiferromagnetic structure to a fully ferromagnetic structure, with non-collinear magnetism serving as the intermediate magnetic structure. (b) A patterned [(LaNiO3)x3/(La2/3Sr1/3MnO3)x9]n superlattice grown on SrTiO3 (001), built into a Hall-bar devicemore » with on-chip heating for simultaneous anisotropic magnetoresistance and anomalous Nernst measurements. (c) The layer by layer magnetic structure of each LSMO layer within the superlattice, showing non-collinear interlayer magnetic coupling.« less

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Works referenced in this record:

Magnetization switching by spin–orbit torque in an antiferromagnet–ferromagnet bilayer system
journal, February 2016

  • Fukami, Shunsuke; Zhang, Chaoliang; DuttaGupta, Samik
  • Nature Materials, Vol. 15, Issue 5
  • DOI: 10.1038/nmat4566

Domain Observations on FeCrFe Layered Structnres. Evidence for a Biquadratic Coupling Effect
journal, June 1991


Oscillations in exchange coupling and magnetoresistance in metallic superlattice structures: Co/Ru, Co/Cr, and Fe/Cr
journal, May 1990


Spin Hall Effects in Metallic Antiferromagnets
journal, November 2014


Unambiguous separation of the inverse spin Hall and anomalous Nernst effects within a ferromagnetic metal using the spin Seebeck effect
journal, September 2014

  • Wu, Stephen M.; Hoffman, Jason; Pearson, John E.
  • Applied Physics Letters, Vol. 105, Issue 9
  • DOI: 10.1063/1.4895034

Spin Seebeck devices using local on-chip heating
journal, May 2015

  • Wu, Stephen M.; Fradin, Frank Y.; Hoffman, Jason
  • Journal of Applied Physics, Vol. 117, Issue 17
  • DOI: 10.1063/1.4916188

Thermal Generation of Spin Current in an Antiferromagnet
journal, December 2015


Oscillatory Noncollinear Magnetism Induced by Interfacial Charge Transfer in Superlattices Composed of Metallic Oxides
journal, November 2016


Magnetic domain structures of La0.67Sr0.33MnO3 thin films with different morphologies
journal, October 1997

  • Lecoeur, P.; Trouilloud, P. L.; Xiao, Gang
  • Journal of Applied Physics, Vol. 82, Issue 8
  • DOI: 10.1063/1.365700

Anisotropic magnetoresistance and planar Hall effect in epitaxial films of La0.7Ca0.3MnO3
journal, July 2009

  • Naftalis, N.; Bason, Y.; Hoffman, J.
  • Journal of Applied Physics, Vol. 106, Issue 2
  • DOI: 10.1063/1.3176934

Planar Hall-effect magnetic random access memory
journal, April 2006

  • Bason, Y.; Klein, L.; Yau, J. -B.
  • Journal of Applied Physics, Vol. 99, Issue 8
  • DOI: 10.1063/1.2162824

Exchange coupling in magnetic heterostructures
journal, September 1993


Magnetic anisotropy and strain states of (001) and (110) colossal magnetoresistance thin films
journal, October 2000

  • Berndt, L. M.; Balbarin, Vincent; Suzuki, Y.
  • Applied Physics Letters, Vol. 77, Issue 18
  • DOI: 10.1063/1.1321733

Overview of interlayer exchange theory
journal, September 1995


Prospect for Antiferromagnetic Spintronics
journal, April 2015

  • Marti, Xavier; Fina, Ignasi; Jungwirth, Tomas
  • IEEE Transactions on Magnetics, Vol. 51, Issue 4
  • DOI: 10.1109/TMAG.2014.2358939

Anisotropic magnetoresistance in an antiferromagnetic semiconductor
journal, September 2014

  • Fina, I.; Marti, X.; Yi, D.
  • Nature Communications, Vol. 5, Issue 1
  • DOI: 10.1038/ncomms5671

Magnetoresistance tensor of La 0.8 Sr 0.2 MnO 3
journal, March 2009


Magnetic anisotropy of doped manganite thin films and crystals
journal, June 1998

  • Suzuki, Y.; Hwang, H. Y.; Cheong, S-W.
  • Journal of Applied Physics, Vol. 83, Issue 11
  • DOI: 10.1063/1.367570

Room-temperature antiferromagnetic memory resistor
journal, January 2014

  • Marti, X.; Fina, I.; Frontera, C.
  • Nature Materials, Vol. 13, Issue 4
  • DOI: 10.1038/nmat3861

Biquadratic interlayer coupling in layered magnetic systems
journal, April 1998


Giant Enhancement of Magnetic Anisotropy in Ultrathin Manganite Films via Nanoscale 1D Periodic Depth Modulation
journal, May 2016


Anisotropic magnetoresistance in ferromagnetic 3d alloys
journal, July 1975


Spin-Torque Ferromagnetic Resonance Induced by the Spin Hall Effect
journal, January 2011


Electrical switching of an antiferromagnet
journal, January 2016


Antiferromagnetic spintronics
journal, March 2016

  • Jungwirth, T.; Marti, X.; Wadley, P.
  • Nature Nanotechnology, Vol. 11, Issue 3
  • DOI: 10.1038/nnano.2016.18

An antidamping spin–orbit torque originating from the Berry curvature
journal, March 2014

  • Kurebayashi, H.; Sinova, Jairo; Fang, D.
  • Nature Nanotechnology, Vol. 9, Issue 3
  • DOI: 10.1038/nnano.2014.15

Antiferromagnetic Spin Seebeck Effect
journal, March 2016


Phase-sensitive specular neutron reflectometry for imaging the nanometer scale composition depth profile of thin-film materials
journal, February 2012

  • Kirby, B. J.; Kienzle, P. A.; Maranville, B. B.
  • Current Opinion in Colloid & Interface Science, Vol. 17, Issue 1
  • DOI: 10.1016/j.cocis.2011.11.001

Effect of electric field doping on the anisotropic magnetoresistance in doped manganites
journal, November 2006


Magnetic anisotropy of ferromagnetic La0.7(Sr, Ca)0.3MnO3 epitaxial films
journal, September 1999

  • Steenbeck, K.; Hiergeist, R.
  • Applied Physics Letters, Vol. 75, Issue 12
  • DOI: 10.1063/1.124817

Dual Antiferromagnetic Coupling at La 0.67 Sr 0.33 MnO 3 / SrRuO 3 Interfaces
journal, July 2012


Giant Planar Hall Effect in Epitaxial (Ga,Mn)As Devices
journal, March 2003


Ultrafast switching in a synthetic antiferromagnetic magnetic random-access memory device
journal, June 2011


    Figures/Tables have been extracted from DOE-funded journal article accepted manuscripts.