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Title: A kinetic model for stress generation in thin films grown from energetic vapor fluxes

We have developed a kinetic model for residual stress generation in thin films grown from energetic vapor fluxes, encountered, e.g., during sputter deposition. This new analytical model considers sub-surface point defects created by atomic peening, along with processes treated in already existing stress models for non-energetic deposition, i.e., thermally activated diffusion processes at the surface and the grain boundary. According to the new model, ballistically induced subsurface defects can get incorporated as excess atoms at the grain boundary, remain trapped in the bulk, or annihilate at the free surface, resulting in a complex dependence of the steady-state stress on the grain size, the growth rate, as well as the energetics of the incoming particle flux. We compare calculations from the model with in situ stress measurements performed on a series of Mo films sputter-deposited at different conditions and having different grain sizes. The model is able to reproduce the observed increase of compressive stress with increasing growth rate, behavior that is the opposite of what is typically seen under non-energetic growth conditions. On a grander scale, this study is a step towards obtaining a comprehensive understanding of stress generation and evolution in vapor deposited polycrystalline thin films.
Authors:
 [1] ;  [1] ;  [2] ; ORCiD logo [3] ; ORCiD logo [3] ;  [2]
  1. Brown Univ., Providence, RI (United States). School of Engineering
  2. Univ. of Poitiers and National School of Mechanics and Aerotechnics (ENSMA), CNRS, Chasseneuil-du-Poitou (France). Inst. P (Pprime) and Dept. of Physics and Mechanics of Materials
  3. Linkoping Univ. (Sweden). Nanoscale Engineering Division and Dept. of Physics, Chemistry and Biology
Publication Date:
Grant/Contract Number:
SC0008799
Type:
Accepted Manuscript
Journal Name:
Journal of Applied Physics
Additional Journal Information:
Journal Volume: 119; Journal Issue: 14; Journal ID: ISSN 0021-8979
Publisher:
American Institute of Physics (AIP)
Research Org:
Brown Univ., Providence, RI (United States)
Sponsoring Org:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; 42 ENGINEERING
OSTI Identifier:
1470756
Alternate Identifier(s):
OSTI ID: 1247217

Chason, E., Karlson, M., Colin, J. J., Magnfält, D., Sarakinos, K., and Abadias, G.. A kinetic model for stress generation in thin films grown from energetic vapor fluxes. United States: N. p., Web. doi:10.1063/1.4946039.
Chason, E., Karlson, M., Colin, J. J., Magnfält, D., Sarakinos, K., & Abadias, G.. A kinetic model for stress generation in thin films grown from energetic vapor fluxes. United States. doi:10.1063/1.4946039.
Chason, E., Karlson, M., Colin, J. J., Magnfält, D., Sarakinos, K., and Abadias, G.. 2016. "A kinetic model for stress generation in thin films grown from energetic vapor fluxes". United States. doi:10.1063/1.4946039. https://www.osti.gov/servlets/purl/1470756.
@article{osti_1470756,
title = {A kinetic model for stress generation in thin films grown from energetic vapor fluxes},
author = {Chason, E. and Karlson, M. and Colin, J. J. and Magnfält, D. and Sarakinos, K. and Abadias, G.},
abstractNote = {We have developed a kinetic model for residual stress generation in thin films grown from energetic vapor fluxes, encountered, e.g., during sputter deposition. This new analytical model considers sub-surface point defects created by atomic peening, along with processes treated in already existing stress models for non-energetic deposition, i.e., thermally activated diffusion processes at the surface and the grain boundary. According to the new model, ballistically induced subsurface defects can get incorporated as excess atoms at the grain boundary, remain trapped in the bulk, or annihilate at the free surface, resulting in a complex dependence of the steady-state stress on the grain size, the growth rate, as well as the energetics of the incoming particle flux. We compare calculations from the model with in situ stress measurements performed on a series of Mo films sputter-deposited at different conditions and having different grain sizes. The model is able to reproduce the observed increase of compressive stress with increasing growth rate, behavior that is the opposite of what is typically seen under non-energetic growth conditions. On a grander scale, this study is a step towards obtaining a comprehensive understanding of stress generation and evolution in vapor deposited polycrystalline thin films.},
doi = {10.1063/1.4946039},
journal = {Journal of Applied Physics},
number = 14,
volume = 119,
place = {United States},
year = {2016},
month = {4}
}

Works referenced in this record:

Origin of Compressive Residual Stress in Polycrystalline Thin Films
journal, March 2002