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Title: Large Photothermal Effect in Sub-40 nm h-BN Nanostructures Patterned Via High-Resolution Ion Beam

Abstract

The controlled nanoscale patterning of 2D materials is a promising approach for engineering the optoelectronic, thermal, and mechanical properties of these materials to achieve novel functionalities and devices. Herein, high-resolution patterning of hexagonal boron nitride (h-BN) is demonstrated via both helium and neon ion beams and an optimal dosage range for both ions that serve as a baseline for insulating 2D materials is identified. Through this nanofabrication approach, a grating with a 35 nm pitch, individual structure sizes down to 20 nm, and additional nanostructures created by patterning crystal step edges are demonstrated. Raman spectroscopy is used to study the defects induced by the ion beam patterning and is correlated to scanning probe microscopy. Photothermal and scanning near-field optical microscopy measure the resulting near-field absorption and scattering of the nanostructures. These measurements reveal a large photothermal expansion of nanostructured h-BN that is dependent on the height to width aspect ratio of the nanostructures. This effect is attributed to the large anisotropy of the thermal expansion coefficients of h-BN and the nanostructuring implemented. Finally, the photothermal expansion should be present in other van der Waals materials with large anisotropy and can lead to applications such as nanomechanical switches driven by light.

Authors:
ORCiD logo [1];  [2];  [3];  [4];  [2];  [5];  [6];  [7];  [6];  [4];  [6];  [8];  [8];  [1];  [9];  [6];  [6]
  1. Massachusetts Inst. of Technology (MIT), Cambridge, MA (United States). Dept. of Electrical Engineering and Computer Science
  2. Harvard Univ., Cambridge MA (United States). Center for Nanoscale Systems
  3. Univ. of California, San Diego, CA (United States). Dept. of Physics
  4. Carl Zeiss Microscopy, LLC, Peabody, MA (United States)
  5. Nanyang Technological Univ., Singapore (Singapore). School of Physical and Mathematical Sciences, Division of Physics and Applied Physics
  6. Massachusetts Inst. of Technology (MIT), Cambridge, MA (United States). Dept. of Physics
  7. The Pennsylvania State Univ., University Park, PA (United States). Dept. of Electrical Engineering
  8. National Inst. for Materials Science, Ibaraki (Japan)
  9. Columbia Univ., New York, NY (United States). Dept. of Physics
Publication Date:
Research Org.:
Energy Frontier Research Centers (EFRC), Washington D.C. (United States). Center for Excitonics (CE)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
OSTI Identifier:
1470540
Alternate Identifier(s):
OSTI ID: 1434374
Grant/Contract Number:  
SC0001088
Resource Type:
Accepted Manuscript
Journal Name:
Small
Additional Journal Information:
Journal Volume: 14; Journal Issue: 22; Related Information: CE partners with Massachusetts Institute of Technology (lead); Brookhaven National Laboratory; Harvard University; Journal ID: ISSN 1613-6810
Publisher:
Wiley
Country of Publication:
United States
Language:
English
Subject:
42 ENGINEERING; 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; 36 MATERIALS SCIENCE; 77 NANOSCIENCE AND NANOTECHNOLOGY; solar (photovoltaic); solid state lighting; photosynthesis (natural and artificial); charge transport; optics; synthesis (novel materials); synthesis (self-assembly); synthesis (scalable processing); 2D materials; helium and neon ion beam fabrication; hexagonal boron nitride (h-BN); near-field imaging; photothermal effect

Citation Formats

López, Josué J., Ambrosio, Antonio, Dai, Siyuan, Huynh, Chuong, Bell, David C., Lin, Xiao, Rivera, Nicholas, Huang, Shengxi, Ma, Qiong, Eyhusen, Soeren, Kaminer, Ido E., Watanabe, Kenji, Taniguchi, Takashi, Kong, Jing, Basov, Dimitri N., Jarillo-Herrero, Pablo, and Soljačić, Marin. Large Photothermal Effect in Sub-40 nm h-BN Nanostructures Patterned Via High-Resolution Ion Beam. United States: N. p., 2018. Web. doi:10.1002/smll.201800072.
López, Josué J., Ambrosio, Antonio, Dai, Siyuan, Huynh, Chuong, Bell, David C., Lin, Xiao, Rivera, Nicholas, Huang, Shengxi, Ma, Qiong, Eyhusen, Soeren, Kaminer, Ido E., Watanabe, Kenji, Taniguchi, Takashi, Kong, Jing, Basov, Dimitri N., Jarillo-Herrero, Pablo, & Soljačić, Marin. Large Photothermal Effect in Sub-40 nm h-BN Nanostructures Patterned Via High-Resolution Ion Beam. United States. doi:10.1002/smll.201800072.
López, Josué J., Ambrosio, Antonio, Dai, Siyuan, Huynh, Chuong, Bell, David C., Lin, Xiao, Rivera, Nicholas, Huang, Shengxi, Ma, Qiong, Eyhusen, Soeren, Kaminer, Ido E., Watanabe, Kenji, Taniguchi, Takashi, Kong, Jing, Basov, Dimitri N., Jarillo-Herrero, Pablo, and Soljačić, Marin. Tue . "Large Photothermal Effect in Sub-40 nm h-BN Nanostructures Patterned Via High-Resolution Ion Beam". United States. doi:10.1002/smll.201800072. https://www.osti.gov/servlets/purl/1470540.
@article{osti_1470540,
title = {Large Photothermal Effect in Sub-40 nm h-BN Nanostructures Patterned Via High-Resolution Ion Beam},
author = {López, Josué J. and Ambrosio, Antonio and Dai, Siyuan and Huynh, Chuong and Bell, David C. and Lin, Xiao and Rivera, Nicholas and Huang, Shengxi and Ma, Qiong and Eyhusen, Soeren and Kaminer, Ido E. and Watanabe, Kenji and Taniguchi, Takashi and Kong, Jing and Basov, Dimitri N. and Jarillo-Herrero, Pablo and Soljačić, Marin},
abstractNote = {The controlled nanoscale patterning of 2D materials is a promising approach for engineering the optoelectronic, thermal, and mechanical properties of these materials to achieve novel functionalities and devices. Herein, high-resolution patterning of hexagonal boron nitride (h-BN) is demonstrated via both helium and neon ion beams and an optimal dosage range for both ions that serve as a baseline for insulating 2D materials is identified. Through this nanofabrication approach, a grating with a 35 nm pitch, individual structure sizes down to 20 nm, and additional nanostructures created by patterning crystal step edges are demonstrated. Raman spectroscopy is used to study the defects induced by the ion beam patterning and is correlated to scanning probe microscopy. Photothermal and scanning near-field optical microscopy measure the resulting near-field absorption and scattering of the nanostructures. These measurements reveal a large photothermal expansion of nanostructured h-BN that is dependent on the height to width aspect ratio of the nanostructures. This effect is attributed to the large anisotropy of the thermal expansion coefficients of h-BN and the nanostructuring implemented. Finally, the photothermal expansion should be present in other van der Waals materials with large anisotropy and can lead to applications such as nanomechanical switches driven by light.},
doi = {10.1002/smll.201800072},
journal = {Small},
number = 22,
volume = 14,
place = {United States},
year = {2018},
month = {4}
}

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