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Title: High-performance near-field electroluminescent refrigeration device consisting of a GaAs light emitting diode and a Si photovoltaic cell

Abstract

We consider a near-field electroluminescent refrigeration device. The device uses a GaAs light emitting diode as the cold side, and a Si photovoltaic cell as the hot side. The two sides are brought in close proximity to each other across a vacuum gap. The cooling is achieved by applying a positive bias on the GaAs light emitting diode. We show that the choice of GaAs and Si here can suppress the non-idealities for electroluminescent cooling purposes: GaAs has a wide bandgap with low Auger recombination, and Si is a non-polar semiconductor which leads to significantly reduced sub-bandgap heat transfer. We show that by using this configuration in the near-field regime, the cooling power density can reach 10 5 W/m 2 even in the presence of realistic Auger recombination and Shockley-Read-Hall recombination. In addition, with photovoltaic power recovery from the Si cell, the efficiency of the device can be further improved. Our work points to the significant potential of combining near-field heat transfer with active semiconductor devices for the control of heat flow.

Authors:
 [1];  [2];  [1];  [2];  [1]
  1. Stanford Univ., CA (United States)
  2. Univ. of California, Berkeley, CA (United States)
Publication Date:
Research Org.:
Energy Frontier Research Centers (EFRC) (United States). Light-Material Interactions in Energy Conversion (LMI)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
OSTI Identifier:
1470394
Alternate Identifier(s):
OSTI ID: 1399295
Grant/Contract Number:  
SC0001293
Resource Type:
Accepted Manuscript
Journal Name:
Journal of Applied Physics
Additional Journal Information:
Journal Volume: 122; Journal Issue: 14; Related Information: LMI partners with California Institute of Technology (lead); Harvard University; University of Illinois, Urbana-Champaign; Lawrence Berkeley National Laboratory; Journal ID: ISSN 0021-8979
Publisher:
American Institute of Physics (AIP)
Country of Publication:
United States
Language:
English
Subject:
42 ENGINEERING; 14 SOLAR ENERGY; solar (photovoltaic); solid state lighting; phonons; thermal conductivity; electrodes - solar; materials and chemistry by design; optics; synthesis (novel materials); synthesis (self-assembly)

Citation Formats

Chen, Kaifeng, Xiao, Tianyao P., Santhanam, Parthiban, Yablonovitch, Eli, and Fan, Shanhui. High-performance near-field electroluminescent refrigeration device consisting of a GaAs light emitting diode and a Si photovoltaic cell. United States: N. p., 2017. Web. doi:10.1063/1.5007712.
Chen, Kaifeng, Xiao, Tianyao P., Santhanam, Parthiban, Yablonovitch, Eli, & Fan, Shanhui. High-performance near-field electroluminescent refrigeration device consisting of a GaAs light emitting diode and a Si photovoltaic cell. United States. doi:10.1063/1.5007712.
Chen, Kaifeng, Xiao, Tianyao P., Santhanam, Parthiban, Yablonovitch, Eli, and Fan, Shanhui. Fri . "High-performance near-field electroluminescent refrigeration device consisting of a GaAs light emitting diode and a Si photovoltaic cell". United States. doi:10.1063/1.5007712. https://www.osti.gov/servlets/purl/1470394.
@article{osti_1470394,
title = {High-performance near-field electroluminescent refrigeration device consisting of a GaAs light emitting diode and a Si photovoltaic cell},
author = {Chen, Kaifeng and Xiao, Tianyao P. and Santhanam, Parthiban and Yablonovitch, Eli and Fan, Shanhui},
abstractNote = {We consider a near-field electroluminescent refrigeration device. The device uses a GaAs light emitting diode as the cold side, and a Si photovoltaic cell as the hot side. The two sides are brought in close proximity to each other across a vacuum gap. The cooling is achieved by applying a positive bias on the GaAs light emitting diode. We show that the choice of GaAs and Si here can suppress the non-idealities for electroluminescent cooling purposes: GaAs has a wide bandgap with low Auger recombination, and Si is a non-polar semiconductor which leads to significantly reduced sub-bandgap heat transfer. We show that by using this configuration in the near-field regime, the cooling power density can reach 105 W/m2 even in the presence of realistic Auger recombination and Shockley-Read-Hall recombination. In addition, with photovoltaic power recovery from the Si cell, the efficiency of the device can be further improved. Our work points to the significant potential of combining near-field heat transfer with active semiconductor devices for the control of heat flow.},
doi = {10.1063/1.5007712},
journal = {Journal of Applied Physics},
number = 14,
volume = 122,
place = {United States},
year = {2017},
month = {10}
}

Journal Article:
Free Publicly Available Full Text
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Citation Metrics:
Cited by: 16 works
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Figures / Tables:

FIG. 1 FIG. 1: A near-field electroluminescent cooling device consisting of a LED (made of GaAs) at temperature T1 and a PV cell (made of Si) at temperature T1, separated by a vacuum gap with size d, and T1 < T2. The thicknesses of the two bodies are t1 and t2. Bothmore » bodies are backed with perfectly reflecting mirrors in order to prohibit emission to the back sides. The voltages applied on the LED is V1, and a result of a net photo flux from the LED to the PV cell, the PV cell may have a voltage V2. The generated electric power –I2V2 can be fed back as part of the injected external electric power I1V1 into the LED, where I1 and I2 are the current densities in bodies 1 and 2 defined in Eqs. (6) and (7). The arrows indicate the direction of emission from the GaAs LED and the Si PV cell.« less

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    Figures/Tables have been extracted from DOE-funded journal article accepted manuscripts.