InGaP-based quantum well solar cells: Growth, structural design, and photovoltaic properties

Hashem, Islam E.; Carlin, C. Zachary; Hagar, Brandon G.; Colter, Peter C.; Bedair, S. M.

doi:10.1063/1.4943366

Title: InGaP-based quantum well solar cells: Growth, structural design, and photovoltaic properties

Abstract

Raising the efficiency ceiling of multi-junction solar cells (MJSCs) through the use of more optimal band gap configurations of next-generation MJSC is crucial for concentrator and space systems. Towards this goal, we propose two strain balanced multiple quantum well (SBMQW) structures to tune the bandgap of InGaP-based solar cells. These structures are based on In_xGa_1–xAs_1–zP_z/In_yGa_1–yP (x > y) and In_xGa_1–xP/In_yGa_1–yP (x > y) well/barrier combinations, lattice matched to GaAs in a p-i-n solar cell device. The bandgap of In_xGa_1–xAs_1–zP_z/In_yGa_1–yP can be tuned from 1.82 to 1.65 eV by adjusting the well composition and thickness, which promotes its use as an efficient subcell for next generation five and six junction photovoltaic devices. The thicknesses of wells and barriers are adjusted using a zero net stress balance model to prevent the formation of defects. Thin layers of InGaAsP wells have been grown thermodynamically stable with compositions within the miscibility gap for the bulk alloy. The growth conditions of the two SBMQWs and the individual layers are reported. The structures are characterized and analyzed by optical microscopy, X-ray diffraction, photoluminescence, current-voltage characteristics, and spectral response (external quantum efficiency). In conclusion, the effect of the well number on the excitonic absorption of InGaAsP/InGaP SBMQWsmore » is discussed and analyzed.« less

Authors:

Hashem, Islam E. ^[1]; Carlin, C. Zachary ^[1]; Hagar, Brandon G. ^[1]; Colter, Peter C. ^[1]; Bedair, S. M. ^[1]

North Carolina State Univ., Raleigh, NC (United States)

Publication Date:: Fri Mar 04 00:00:00 EST 2016

Research Org.:: North Carolina State University, Raleigh, NC (United States)

Sponsoring Org.:: USDOE Office of Energy Efficiency and Renewable Energy (EERE)

OSTI Identifier:: 1470319

Alternate Identifier(s):: OSTI ID: 1240310

Grant/Contract Number:: EE0005403

Resource Type:: Accepted Manuscript

Journal Name:: Journal of Applied Physics

Additional Journal Information:: Journal Volume: 119; Journal Issue: 9; Journal ID: ISSN 0021-8979

Publisher:: American Institute of Physics (AIP)

Country of Publication:: United States

Language:: English

Subject:: 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY

Citation Formats


                    Hashem, Islam E., Carlin, C. Zachary, Hagar, Brandon G., Colter, Peter C., and Bedair, S. M. InGaP-based quantum well solar cells: Growth, structural design, and photovoltaic properties.  United States: N. p., 2016. 
Web.  doi:10.1063/1.4943366.

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                    Hashem, Islam E., Carlin, C. Zachary, Hagar, Brandon G., Colter, Peter C., & Bedair, S. M. InGaP-based quantum well solar cells: Growth, structural design, and photovoltaic properties.  United States.  https://doi.org/10.1063/1.4943366

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                    Hashem, Islam E., Carlin, C. Zachary, Hagar, Brandon G., Colter, Peter C., and Bedair, S. M. Fri .  
"InGaP-based quantum well solar cells: Growth, structural design, and photovoltaic properties".  United States.  https://doi.org/10.1063/1.4943366.  https://www.osti.gov/servlets/purl/1470319.

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@article{osti_1470319,

  title        = {InGaP-based quantum well solar cells: Growth, structural design, and photovoltaic properties},

  author       = {Hashem, Islam E. and Carlin, C. Zachary and Hagar, Brandon G. and Colter, Peter C. and Bedair, S. M.},

  abstractNote = {Raising the efficiency ceiling of multi-junction solar cells (MJSCs) through the use of more optimal band gap configurations of next-generation MJSC is crucial for concentrator and space systems. Towards this goal, we propose two strain balanced multiple quantum well (SBMQW) structures to tune the bandgap of InGaP-based solar cells. These structures are based on InxGa1–xAs1–zPz/InyGa1–yP (x > y) and InxGa1–xP/InyGa1–yP (x > y) well/barrier combinations, lattice matched to GaAs in a p-i-n solar cell device. The bandgap of InxGa1–xAs1–zPz/InyGa1–yP can be tuned from 1.82 to 1.65 eV by adjusting the well composition and thickness, which promotes its use as an efficient subcell for next generation five and six junction photovoltaic devices. The thicknesses of wells and barriers are adjusted using a zero net stress balance model to prevent the formation of defects. Thin layers of InGaAsP wells have been grown thermodynamically stable with compositions within the miscibility gap for the bulk alloy. The growth conditions of the two SBMQWs and the individual layers are reported. The structures are characterized and analyzed by optical microscopy, X-ray diffraction, photoluminescence, current-voltage characteristics, and spectral response (external quantum efficiency). In conclusion, the effect of the well number on the excitonic absorption of InGaAsP/InGaP SBMQWs is discussed and analyzed.},

  doi          = {10.1063/1.4943366},

  journal      = {Journal of Applied Physics},

  number       = 9,

  volume       = 119,

  place        = {United States},

  year         = {Fri Mar 04 00:00:00 EST 2016},

  month        = {Fri Mar 04 00:00:00 EST 2016}

}

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Works referencing / citing this record:

Using Spin-Coated Silver Nanoparticles/Zinc Oxide Thin Films to Improve the Efficiency of GaInP/(In)GaAs/Ge Solar Cells
journal, June 2018

Lei, Po-Hsun; Chen, I-Jen; Chen, Jia-Jan
Materials, Vol. 11, Issue 6
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Title: InGaP-based quantum well solar cells: Growth, structural design, and photovoltaic properties

Abstract

Citation Formats

Pseudomorphic InGaAs‐GaAsP quantum well modulators on GaAs journal, February 1992

High-performance strain-compensated InGaAs-GaAsP-GaAs (/spl lambda/=1.17 μm) quantum well diode lasers journal, January 2001

Growth and characterization of InGaAs/GaAsP strained layer superlattices journal, July 1987

A two‐junction cascade solar‐cell structure journal, January 1979

Optical investigation of highly strained InGaAs‐GaAs multiple quantum wells journal, October 1987

InGaN solar cell requirements for high-efficiency integrated III-nitride/non-III-nitride tandem photovoltaic devices journal, June 2012

Band-Edge Electroabsorption in Quantum Well Structures: The Quantum-Confined Stark Effect journal, November 1984

Combined effect of strained‐layer superlattice and annealing in defects reduction in GaAs grown on Si substrates journal, October 1989

The influence of surface segregation on the optical properties of quantum wells journal, October 2004

Limiting efficiencies of ideal single and multiple energy gap terrestrial solar cells journal, August 1980

Band-Gap Engineering: From Physics and Materials to New Semiconductor Devices journal, January 1987

Optical properties of InAlGaAs quantum wells: Influence of segregation and band bowing journal, September 1999

Strain-balanced GaAsP/InGaAs quantum well solar cells journal, December 1999

Design of integrated III-nitride/non-III-nitride tandem photovoltaic devices journal, March 2012

Wafer bonded four-junction GaInP/GaAs//GaInAsP/GaInAs concentrator solar cells with 44.7% efficiency: Wafer bonded four-junction concentrator solar cells with 44.7% efficiency journal, January 2014

Material parameters of In 1− x Ga x As y P 1− y and related binaries journal, December 1982

100-period, 1.23-eV bandgap InGaAs/GaAsP quantum wells for high-efficiency GaAs solar cells: toward current-matched Ge-based tandem cells: 100-period, 1.23-eV bandgap InGaAs/GaAsP quantum wells journal, December 2013

Strain-Balanced Criteria for Multiple Quantum Well Structures and Its Signature in X-ray Rocking Curves † journal, July 2002

Immiscibility and spinodal decomposition in III/V alloys journal, December 1983

Physics of Semiconductor Devices book, January 2007

Will we exceed 50% efficiency in photovoltaics? journal, August 2011

New approaches for high efficiency cascade solar cells journal, June 1987

Physics of Semiconductor Devices journal, October 1990

Defects in epitaxial multilayers journal, February 1976

Characterization of Indium Segregation in Metalorganic Vapor Phase Epitaxy-Grown InGaP by Schottky Barrier Height Measurement journal, January 2011

Defects in epitaxial multilayers: II. Dislocation pile-ups, threading dislocations, slip lines and cracks journal, July 1975

Physics of Semiconductor Devices journal, June 1970

Physics of Semiconductor Devices book, January 2015

Using Spin-Coated Silver Nanoparticles/Zinc Oxide Thin Films to Improve the Efficiency of GaInP/(In)GaAs/Ge Solar Cells journal, June 2018

Pseudomorphic InGaAs‐GaAsP quantum well modulators on GaAs
journal, February 1992

High-performance strain-compensated InGaAs-GaAsP-GaAs (/spl lambda/=1.17 μm) quantum well diode lasers
journal, January 2001

Growth and characterization of InGaAs/GaAsP strained layer superlattices
journal, July 1987

A two‐junction cascade solar‐cell structure
journal, January 1979

Optical investigation of highly strained InGaAs‐GaAs multiple quantum wells
journal, October 1987

InGaN solar cell requirements for high-efficiency integrated III-nitride/non-III-nitride tandem photovoltaic devices
journal, June 2012

Band-Edge Electroabsorption in Quantum Well Structures: The Quantum-Confined Stark Effect
journal, November 1984

Combined effect of strained‐layer superlattice and annealing in defects reduction in GaAs grown on Si substrates
journal, October 1989

The influence of surface segregation on the optical properties of quantum wells
journal, October 2004

Limiting efficiencies of ideal single and multiple energy gap terrestrial solar cells
journal, August 1980

Band-Gap Engineering: From Physics and Materials to New Semiconductor Devices
journal, January 1987

Optical properties of InAlGaAs quantum wells: Influence of segregation and band bowing
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Strain-balanced GaAsP/InGaAs quantum well solar cells
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Will we exceed 50% efficiency in photovoltaics?
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New approaches for high efficiency cascade solar cells
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Physics of Semiconductor Devices
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Defects in epitaxial multilayers
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Characterization of Indium Segregation in Metalorganic Vapor Phase Epitaxy-Grown InGaP by Schottky Barrier Height Measurement
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Defects in epitaxial multilayers: II. Dislocation pile-ups, threading dislocations, slip lines and cracks
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