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Title: InGaP-based quantum well solar cells: Growth, structural design, and photovoltaic properties

Abstract

Raising the efficiency ceiling of multi-junction solar cells (MJSCs) through the use of more optimal band gap configurations of next-generation MJSC is crucial for concentrator and space systems. Towards this goal, we propose two strain balanced multiple quantum well (SBMQW) structures to tune the bandgap of InGaP-based solar cells. These structures are based on In xGa 1–xAs 1–zP z/In yGa 1–yP (x > y) and In xGa 1–xP/In yGa 1–yP (x > y) well/barrier combinations, lattice matched to GaAs in a p-i-n solar cell device. The bandgap of In xGa 1–xAs 1–zP z/In yGa 1–yP can be tuned from 1.82 to 1.65 eV by adjusting the well composition and thickness, which promotes its use as an efficient subcell for next generation five and six junction photovoltaic devices. The thicknesses of wells and barriers are adjusted using a zero net stress balance model to prevent the formation of defects. Thin layers of InGaAsP wells have been grown thermodynamically stable with compositions within the miscibility gap for the bulk alloy. The growth conditions of the two SBMQWs and the individual layers are reported. The structures are characterized and analyzed by optical microscopy, X-ray diffraction, photoluminescence, current-voltage characteristics, and spectral response (external quantummore » efficiency). In conclusion, the effect of the well number on the excitonic absorption of InGaAsP/InGaP SBMQWs is discussed and analyzed.« less

Authors:
 [1];  [1];  [1];  [1];  [1]
  1. North Carolina State Univ., Raleigh, NC (United States)
Publication Date:
Research Org.:
North Carolina State Univ., Raleigh, NC (United States)
Sponsoring Org.:
USDOE Office of Energy Efficiency and Renewable Energy (EERE)
OSTI Identifier:
1470319
Alternate Identifier(s):
OSTI ID: 1240310
Grant/Contract Number:  
EE0005403
Resource Type:
Accepted Manuscript
Journal Name:
Journal of Applied Physics
Additional Journal Information:
Journal Volume: 119; Journal Issue: 9; Journal ID: ISSN 0021-8979
Publisher:
American Institute of Physics (AIP)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY

Citation Formats

Hashem, Islam E., Carlin, C. Zachary, Hagar, Brandon G., Colter, Peter C., and Bedair, S. M. InGaP-based quantum well solar cells: Growth, structural design, and photovoltaic properties. United States: N. p., 2016. Web. doi:10.1063/1.4943366.
Hashem, Islam E., Carlin, C. Zachary, Hagar, Brandon G., Colter, Peter C., & Bedair, S. M. InGaP-based quantum well solar cells: Growth, structural design, and photovoltaic properties. United States. doi:10.1063/1.4943366.
Hashem, Islam E., Carlin, C. Zachary, Hagar, Brandon G., Colter, Peter C., and Bedair, S. M. Fri . "InGaP-based quantum well solar cells: Growth, structural design, and photovoltaic properties". United States. doi:10.1063/1.4943366. https://www.osti.gov/servlets/purl/1470319.
@article{osti_1470319,
title = {InGaP-based quantum well solar cells: Growth, structural design, and photovoltaic properties},
author = {Hashem, Islam E. and Carlin, C. Zachary and Hagar, Brandon G. and Colter, Peter C. and Bedair, S. M.},
abstractNote = {Raising the efficiency ceiling of multi-junction solar cells (MJSCs) through the use of more optimal band gap configurations of next-generation MJSC is crucial for concentrator and space systems. Towards this goal, we propose two strain balanced multiple quantum well (SBMQW) structures to tune the bandgap of InGaP-based solar cells. These structures are based on InxGa1–xAs1–zPz/InyGa1–yP (x > y) and InxGa1–xP/InyGa1–yP (x > y) well/barrier combinations, lattice matched to GaAs in a p-i-n solar cell device. The bandgap of InxGa1–xAs1–zPz/InyGa1–yP can be tuned from 1.82 to 1.65 eV by adjusting the well composition and thickness, which promotes its use as an efficient subcell for next generation five and six junction photovoltaic devices. The thicknesses of wells and barriers are adjusted using a zero net stress balance model to prevent the formation of defects. Thin layers of InGaAsP wells have been grown thermodynamically stable with compositions within the miscibility gap for the bulk alloy. The growth conditions of the two SBMQWs and the individual layers are reported. The structures are characterized and analyzed by optical microscopy, X-ray diffraction, photoluminescence, current-voltage characteristics, and spectral response (external quantum efficiency). In conclusion, the effect of the well number on the excitonic absorption of InGaAsP/InGaP SBMQWs is discussed and analyzed.},
doi = {10.1063/1.4943366},
journal = {Journal of Applied Physics},
number = 9,
volume = 119,
place = {United States},
year = {2016},
month = {3}
}

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