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Title: Control of excitons in multi-layer van der Waals heterostructures

Abstract

Here, we report an experimental study of excitons in a double quantum well van der Waals heterostructure made of atomically thin layers of MoS2 and hexagonal boron nitride. The emission of neutral and charged excitons is controlled by gate voltage, temperature, and both the helicity and the power of optical excitation. Van der Waals heterostructures composed of ultrathin layers of transition metal dichalcogenides (TMD), such as MoS2, WSe2, etc., offer an opportunity to realize artificial materials with designable properties, forming a new platform for studying basic phenomena and developing optoelectronic devices. In the TMD structures, excitons have high binding energies and are prominent in the optical response. The energy, intensity, and polarization of exciton emission give information about the electronic, spin, and valley properties of TMD materials.

Authors:
 [1];  [1];  [1];  [1];  [2];  [2];  [2]
  1. Univ. of California at San Diego, La Jolla, CA (United States)
  2. Univ. of Manchester, Manchester (United Kingdom)
Publication Date:
Research Org.:
Univ. of California, San Diego, CA (United States)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
OSTI Identifier:
1470317
Alternate Identifier(s):
OSTI ID: 1240472
Grant/Contract Number:  
FG02-07ER46449
Resource Type:
Accepted Manuscript
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 108; Journal Issue: 10; Journal ID: ISSN 0003-6951
Publisher:
American Institute of Physics (AIP)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS

Citation Formats

Calman, E. V., Dorow, C. J., Fogler, M. M., Butov, L. V., Hu, S., Mishchenko, A., and Geim, A. K. Control of excitons in multi-layer van der Waals heterostructures. United States: N. p., 2016. Web. doi:10.1063/1.4943204.
Calman, E. V., Dorow, C. J., Fogler, M. M., Butov, L. V., Hu, S., Mishchenko, A., & Geim, A. K. Control of excitons in multi-layer van der Waals heterostructures. United States. doi:10.1063/1.4943204.
Calman, E. V., Dorow, C. J., Fogler, M. M., Butov, L. V., Hu, S., Mishchenko, A., and Geim, A. K. Mon . "Control of excitons in multi-layer van der Waals heterostructures". United States. doi:10.1063/1.4943204. https://www.osti.gov/servlets/purl/1470317.
@article{osti_1470317,
title = {Control of excitons in multi-layer van der Waals heterostructures},
author = {Calman, E. V. and Dorow, C. J. and Fogler, M. M. and Butov, L. V. and Hu, S. and Mishchenko, A. and Geim, A. K.},
abstractNote = {Here, we report an experimental study of excitons in a double quantum well van der Waals heterostructure made of atomically thin layers of MoS2 and hexagonal boron nitride. The emission of neutral and charged excitons is controlled by gate voltage, temperature, and both the helicity and the power of optical excitation. Van der Waals heterostructures composed of ultrathin layers of transition metal dichalcogenides (TMD), such as MoS2, WSe2, etc., offer an opportunity to realize artificial materials with designable properties, forming a new platform for studying basic phenomena and developing optoelectronic devices. In the TMD structures, excitons have high binding energies and are prominent in the optical response. The energy, intensity, and polarization of exciton emission give information about the electronic, spin, and valley properties of TMD materials.},
doi = {10.1063/1.4943204},
journal = {Applied Physics Letters},
number = 10,
volume = 108,
place = {United States},
year = {2016},
month = {3}
}

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Cited by: 22 works
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    Works referencing / citing this record:

    Electronic and optical excitations of two-dimensional ZrS 2 and HfS 2 and their heterostructure
    journal, July 2019


    Exciton-exciton interaction in transition-metal dichalcogenide monolayers
    journal, September 2017


    Electronic and optical excitations of two-dimensional ZrS 2 and HfS 2 and their heterostructure
    journal, July 2019