Gallium vacancy complexes as a cause of Shockley-Read-Hall recombination in III-nitride light emitters
Abstract
In this paper, we describe a mechanism by which complexes between gallium vacancies and oxygen and/or hydrogen act as efficient channels for nonradiative recombination in InGaN alloys. Our identification is based on first-principles calculations of defect formation energies, charge-state transition levels, and nonradiative capture coefficients for electrons and holes. The dependence of these quantities on alloy composition is analyzed. We find that modest concentrations of the proposed defect complexes (~1016 cm-3) can give rise to Shockley-Read-Hall coefficients s-1. Finally, the resulting nonradiative recombination would significantly reduce the internal quantum efficiency of optoelectronic devices.
- Authors:
-
- Univ. of California, Santa Barbara, CA (United States). Materials Dept.
- Center for Physical Sciences and Technology (FTMC), Vilnius (Lithuania); Kaunas Univ. of Technology (Lithuania). Dept. of Physics
- Publication Date:
- Research Org.:
- Univ. of California, Santa Barbara, CA (United States); Center for Physical Sciences and Technology (FTMC), Vilnius (Lithuania); Kaunas Univ. of Technology (Lithuania)
- Sponsoring Org.:
- USDOE Office of Science (SC), Basic Energy Sciences (BES); European Union (EU)
- OSTI Identifier:
- 1470095
- Alternate Identifier(s):
- OSTI ID: 1245489
- Grant/Contract Number:
- SC0010689; AC02-05CH11231; 657054
- Resource Type:
- Accepted Manuscript
- Journal Name:
- Applied Physics Letters
- Additional Journal Information:
- Journal Volume: 108; Journal Issue: 14; Journal ID: ISSN 0003-6951
- Publisher:
- American Institute of Physics (AIP)
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 74 ATOMIC AND MOLECULAR PHYSICS; internal quantum efficiency; recombination reactions; semiconductors; optoelectronic devices; nitrides; Hall effect; first-principle calculations; chemical elements; electron capture; leptons
Citation Formats
Dreyer, Cyrus E., Alkauskas, Audrius, Lyons, John L., Speck, James S., and Van de Walle, Chris G. Gallium vacancy complexes as a cause of Shockley-Read-Hall recombination in III-nitride light emitters. United States: N. p., 2016.
Web. doi:10.1063/1.4942674.
Dreyer, Cyrus E., Alkauskas, Audrius, Lyons, John L., Speck, James S., & Van de Walle, Chris G. Gallium vacancy complexes as a cause of Shockley-Read-Hall recombination in III-nitride light emitters. United States. https://doi.org/10.1063/1.4942674
Dreyer, Cyrus E., Alkauskas, Audrius, Lyons, John L., Speck, James S., and Van de Walle, Chris G. Mon .
"Gallium vacancy complexes as a cause of Shockley-Read-Hall recombination in III-nitride light emitters". United States. https://doi.org/10.1063/1.4942674. https://www.osti.gov/servlets/purl/1470095.
@article{osti_1470095,
title = {Gallium vacancy complexes as a cause of Shockley-Read-Hall recombination in III-nitride light emitters},
author = {Dreyer, Cyrus E. and Alkauskas, Audrius and Lyons, John L. and Speck, James S. and Van de Walle, Chris G.},
abstractNote = {In this paper, we describe a mechanism by which complexes between gallium vacancies and oxygen and/or hydrogen act as efficient channels for nonradiative recombination in InGaN alloys. Our identification is based on first-principles calculations of defect formation energies, charge-state transition levels, and nonradiative capture coefficients for electrons and holes. The dependence of these quantities on alloy composition is analyzed. We find that modest concentrations of the proposed defect complexes (~1016 cm-3) can give rise to Shockley-Read-Hall coefficients A=(107-109) s-1. Finally, the resulting nonradiative recombination would significantly reduce the internal quantum efficiency of optoelectronic devices.},
doi = {10.1063/1.4942674},
journal = {Applied Physics Letters},
number = 14,
volume = 108,
place = {United States},
year = {Mon Apr 04 00:00:00 EDT 2016},
month = {Mon Apr 04 00:00:00 EDT 2016}
}
Web of Science
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