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Title: Gallium vacancy complexes as a cause of Shockley-Read-Hall recombination in III-nitride light emitters

In this paper, we describe a mechanism by which complexes between gallium vacancies and oxygen and/or hydrogen act as efficient channels for nonradiative recombination in InGaN alloys. Our identification is based on first-principles calculations of defect formation energies, charge-state transition levels, and nonradiative capture coefficients for electrons and holes. The dependence of these quantities on alloy composition is analyzed. We find that modest concentrations of the proposed defect complexes (~10 16 cm -3) can give rise to Shockley-Read-Hall coefficients A = ( 10 7 - 10 9 ) s -1. Finally, the resulting nonradiative recombination would significantly reduce the internal quantum efficiency of optoelectronic devices.
Authors:
 [1] ;  [2] ; ORCiD logo [1] ;  [1] ; ORCiD logo [1]
  1. Univ. of California, Santa Barbara, CA (United States). Materials Dept.
  2. Center for Physical Sciences and Technology (FTMC), Vilnius (Lithuania); Kaunas Univ. of Technology (Lithuania). Dept. of Physics
Publication Date:
Grant/Contract Number:
SC0010689; AC02-05CH11231; 657054
Type:
Accepted Manuscript
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 108; Journal Issue: 14; Journal ID: ISSN 0003-6951
Publisher:
American Institute of Physics (AIP)
Research Org:
Univ. of California, Santa Barbara, CA (United States); Center for Physical Sciences and Technology (FTMC), Vilnius (Lithuania); Kaunas Univ. of Technology (Lithuania)
Sponsoring Org:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22); European Union (EU)
Country of Publication:
United States
Language:
English
Subject:
74 ATOMIC AND MOLECULAR PHYSICS; internal quantum efficiency; recombination reactions; semiconductors; optoelectronic devices; nitrides; Hall effect; first-principle calculations; chemical elements; electron capture; leptons
OSTI Identifier:
1470095
Alternate Identifier(s):
OSTI ID: 1245489

Dreyer, Cyrus E., Alkauskas, Audrius, Lyons, John L., Speck, James S., and Van de Walle, Chris G.. Gallium vacancy complexes as a cause of Shockley-Read-Hall recombination in III-nitride light emitters. United States: N. p., Web. doi:10.1063/1.4942674.
Dreyer, Cyrus E., Alkauskas, Audrius, Lyons, John L., Speck, James S., & Van de Walle, Chris G.. Gallium vacancy complexes as a cause of Shockley-Read-Hall recombination in III-nitride light emitters. United States. doi:10.1063/1.4942674.
Dreyer, Cyrus E., Alkauskas, Audrius, Lyons, John L., Speck, James S., and Van de Walle, Chris G.. 2016. "Gallium vacancy complexes as a cause of Shockley-Read-Hall recombination in III-nitride light emitters". United States. doi:10.1063/1.4942674. https://www.osti.gov/servlets/purl/1470095.
@article{osti_1470095,
title = {Gallium vacancy complexes as a cause of Shockley-Read-Hall recombination in III-nitride light emitters},
author = {Dreyer, Cyrus E. and Alkauskas, Audrius and Lyons, John L. and Speck, James S. and Van de Walle, Chris G.},
abstractNote = {In this paper, we describe a mechanism by which complexes between gallium vacancies and oxygen and/or hydrogen act as efficient channels for nonradiative recombination in InGaN alloys. Our identification is based on first-principles calculations of defect formation energies, charge-state transition levels, and nonradiative capture coefficients for electrons and holes. The dependence of these quantities on alloy composition is analyzed. We find that modest concentrations of the proposed defect complexes (~1016 cm-3) can give rise to Shockley-Read-Hall coefficients A=(107-109) s-1. Finally, the resulting nonradiative recombination would significantly reduce the internal quantum efficiency of optoelectronic devices.},
doi = {10.1063/1.4942674},
journal = {Applied Physics Letters},
number = 14,
volume = 108,
place = {United States},
year = {2016},
month = {4}
}