Direct observation of a two-dimensional hole gas at oxide interfaces
- Univ. of Wisconsin, Madison, WI (United States). Dept. of Materials Science and Engineering
- Univ. of Wisconsin, Madison, WI (United States). Dept. of Physics
- Sungkyunkwan Univ., Suwon (Republic of Korea). Dept. of Energy Science
- The Ohio State Univ., Columbus, OH (United States). Dept. of Physics
- Univ. of Nebraska, Lincoln, NE (United States). Nebraska Center for Materials and Nanoscience, Dept. of Physics and Astronomy
- Argonne National Lab. (ANL), Argonne, IL (United States). Advanced Photon Source (APS), X-Ray Science Division
- Sungkyunkwan Univ., Suwon (Republic of Korea). Dept. of Energy Science; Pohang Univ. of Science and Technology (POSTECH) (Korea, Republic of). Dept. of Materials Science and Engineering
- The Ohio State Univ., Columbus, OH (United States). Dept. of Physics; The Ohio State Univ., Columbus, OH (United States). Dept. of Electrical and Computer Engineering
The discovery of a two-dimensional electron gas (2DEG) at the LaAlO3/SrTiO3 interface has resulted in the observation of many properties not present in conventional semiconductor heterostructures, and so become a focal point for device applications. Its counterpart, the two-dimensional hole gas (2DHG), is expected to complement the 2DEG. However, although the 2DEG has been widely observed, the 2DHG has proved elusive. Here in this paper we demonstrate a highly mobile 2DHG in epitaxially grown SrTiO3/LaAlO3/SrTiO3 heterostructures. Using electrical transport measurements and in-line electron holography, we provide direct evidence of a 2DHG that coexists with a 2DEG at complementary heterointerfaces in the same structure. First-principles calculations, coherent Bragg rod analysis and depth-resolved cathodoluminescence spectroscopy consistently support our finding that to eliminate ionic point defects is key to realizing a 2DHG. Lastly, the coexistence of a 2DEG and a 2DHG in a single oxide heterostructure provides a platform for the exciting physics of confined electron-hole systems and for developing applications.
- Research Organization:
- Argonne National Laboratory (ANL), Argonne, IL (United States)
- Sponsoring Organization:
- National Science Foundation (NSF); USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
- Grant/Contract Number:
- AC02-06CH11357; FG02-06ER46327
- OSTI ID:
- 1469800
- Journal Information:
- Nature Materials, Journal Name: Nature Materials Journal Issue: 3 Vol. 17; ISSN 1476-1122
- Publisher:
- Nature Publishing GroupCopyright Statement
- Country of Publication:
- United States
- Language:
- English
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