Thermal conductivity of GaN single crystals: Influence of impurities incorporated in different growth processes
Abstract
The thermal conductivity of GaN crystals grown by different techniques is analyzed using the 3ω method in the temperature range of 30 K to 295 K. GaN wafers grown by the ammonothermal method show a significant variation in thermal conductivity at room temperature with values ranging between 164 W m-1 K-1 and 196 W m-1 K-1. GaN crystals produced with the sodium flux and hydride vapor phase epitaxy methods show results of 211 W m-1 K-1 and 224 W m-1 K-1, respectively, at room temperature. Analysis using secondary ion mass spectrometry indicates varying amounts of impurities between the respective crystals and explains the behavior of thermal conductivity trends in the samples. The observed difference between thermal conductivity curves suggests that scattering of phonons at point defects dominates the thermal conductivity of GaN within the investigated temperature range. Finally, deviations of model curves from thermal conductivity measurements and disparities between modelled characteristic lengths and actual sample thicknesses indicate that phonon resonances are active in GaN.
- Authors:
-
[1];
- North Carolina State Univ., Raleigh, NC (United States). Dept. of Materials Science and Engineering
- Polish Academy of Sciences, Warsaw (Poland). Inst. of High Pressure Physics
- Osaka Univ., Suita, Osaka (Japan). Graduate School of Engineering, Division of Electrical, Electronic, and Information Engineering
- Publication Date:
- Research Org.:
- Adroit Materials, Cary, NC (United States)
- Sponsoring Org.:
- USDOE Office of Science (SC)
- OSTI Identifier:
- 1540253
- Alternate Identifier(s):
- OSTI ID: 1469744
- Grant/Contract Number:
- SC0011883
- Resource Type:
- Accepted Manuscript
- Journal Name:
- Journal of Applied Physics
- Additional Journal Information:
- Journal Volume: 124; Journal Issue: 10; Journal ID: ISSN 0021-8979
- Publisher:
- American Institute of Physics (AIP)
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE; physics
Citation Formats
Rounds, Robert, Sarkar, Biplab, Sochacki, Tomasz, Bockowski, Michal, Imanishi, Masayuki, Mori, Yusuke, Kirste, Ronny, Collazo, Ramón, and Sitar, Zlatko. Thermal conductivity of GaN single crystals: Influence of impurities incorporated in different growth processes. United States: N. p., 2018.
Web. doi:10.1063/1.5047531.
Rounds, Robert, Sarkar, Biplab, Sochacki, Tomasz, Bockowski, Michal, Imanishi, Masayuki, Mori, Yusuke, Kirste, Ronny, Collazo, Ramón, & Sitar, Zlatko. Thermal conductivity of GaN single crystals: Influence of impurities incorporated in different growth processes. United States. https://doi.org/10.1063/1.5047531
Rounds, Robert, Sarkar, Biplab, Sochacki, Tomasz, Bockowski, Michal, Imanishi, Masayuki, Mori, Yusuke, Kirste, Ronny, Collazo, Ramón, and Sitar, Zlatko. Wed .
"Thermal conductivity of GaN single crystals: Influence of impurities incorporated in different growth processes". United States. https://doi.org/10.1063/1.5047531. https://www.osti.gov/servlets/purl/1540253.
@article{osti_1540253,
title = {Thermal conductivity of GaN single crystals: Influence of impurities incorporated in different growth processes},
author = {Rounds, Robert and Sarkar, Biplab and Sochacki, Tomasz and Bockowski, Michal and Imanishi, Masayuki and Mori, Yusuke and Kirste, Ronny and Collazo, Ramón and Sitar, Zlatko},
abstractNote = {The thermal conductivity of GaN crystals grown by different techniques is analyzed using the 3ω method in the temperature range of 30 K to 295 K. GaN wafers grown by the ammonothermal method show a significant variation in thermal conductivity at room temperature with values ranging between 164 W m-1 K-1 and 196 W m-1 K-1. GaN crystals produced with the sodium flux and hydride vapor phase epitaxy methods show results of 211 W m-1 K-1 and 224 W m-1 K-1, respectively, at room temperature. Analysis using secondary ion mass spectrometry indicates varying amounts of impurities between the respective crystals and explains the behavior of thermal conductivity trends in the samples. The observed difference between thermal conductivity curves suggests that scattering of phonons at point defects dominates the thermal conductivity of GaN within the investigated temperature range. Finally, deviations of model curves from thermal conductivity measurements and disparities between modelled characteristic lengths and actual sample thicknesses indicate that phonon resonances are active in GaN.},
doi = {10.1063/1.5047531},
journal = {Journal of Applied Physics},
number = 10,
volume = 124,
place = {United States},
year = {Wed Sep 12 00:00:00 EDT 2018},
month = {Wed Sep 12 00:00:00 EDT 2018}
}
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Works referencing / citing this record:
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