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Title: Investigation of cadmium telluride grown by molecular-beam epitaxy using micro-Raman spectroscopy below and above the laser damage threshold

Abstract

The effects of visible laser light on cadmium telluride (CdTe), grown by molecular beam epitaxy, are studied at low (48 μW/μm2) and high (480 μW/μm2) laser power densities using micro-Raman spectroscopy. The Raman spectrum of CdTe shows no notable change at low power density ~48 μW/μm2 for prolonged laser exposure. At higher power density ~480 μW/μm2, the Raman spectrum is significantly changed and strong Te-related peaks appear in the spectrum, even for short laser exposure times suggesting that photo-induced Te enrichment happens at the CdTe surface at high laser power density. The temperature rise is estimated from observed shifts in the Te and CdTe optical phonon peaks and modeled using finite-element simulations. At laser power 480 μW/μm2, the CdTe exhibits a rise of ~44 °C above room temperature while the observed change in Te temperature is significantly higher, ~179 °C. Furthermore, the approach illustrates steps needed to establish the laser damage threshold for CdTe.

Authors:
 [1];  [1];  [1];  [1]
  1. Texas State Univ., San Marcos, TX (United States)
Publication Date:
Research Org.:
Texas State Univ., San Marcos, TX (United States)
Sponsoring Org.:
USDOE Office of Energy Efficiency and Renewable Energy (EERE), Renewable Power Office. Solar Energy Technologies Office
OSTI Identifier:
1579312
Alternate Identifier(s):
OSTI ID: 1469728
Grant/Contract Number:  
EE0007541
Resource Type:
Accepted Manuscript
Journal Name:
Journal of Vacuum Science and Technology. B, Nanotechnology and Microelectronics
Additional Journal Information:
Journal Volume: 36; Journal Issue: 5; Journal ID: ISSN 2166-2746
Publisher:
American Vacuum Society/AIP
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE

Citation Formats

Sohal, Sandeep, Edirisooriya, Madhavie, Myers, Thomas, and Holtz, Mark. Investigation of cadmium telluride grown by molecular-beam epitaxy using micro-Raman spectroscopy below and above the laser damage threshold. United States: N. p., 2018. Web. doi:10.1116/1.5048526.
Sohal, Sandeep, Edirisooriya, Madhavie, Myers, Thomas, & Holtz, Mark. Investigation of cadmium telluride grown by molecular-beam epitaxy using micro-Raman spectroscopy below and above the laser damage threshold. United States. https://doi.org/10.1116/1.5048526
Sohal, Sandeep, Edirisooriya, Madhavie, Myers, Thomas, and Holtz, Mark. Wed . "Investigation of cadmium telluride grown by molecular-beam epitaxy using micro-Raman spectroscopy below and above the laser damage threshold". United States. https://doi.org/10.1116/1.5048526. https://www.osti.gov/servlets/purl/1579312.
@article{osti_1579312,
title = {Investigation of cadmium telluride grown by molecular-beam epitaxy using micro-Raman spectroscopy below and above the laser damage threshold},
author = {Sohal, Sandeep and Edirisooriya, Madhavie and Myers, Thomas and Holtz, Mark},
abstractNote = {The effects of visible laser light on cadmium telluride (CdTe), grown by molecular beam epitaxy, are studied at low (48 μW/μm2) and high (480 μW/μm2) laser power densities using micro-Raman spectroscopy. The Raman spectrum of CdTe shows no notable change at low power density ~48 μW/μm2 for prolonged laser exposure. At higher power density ~480 μW/μm2, the Raman spectrum is significantly changed and strong Te-related peaks appear in the spectrum, even for short laser exposure times suggesting that photo-induced Te enrichment happens at the CdTe surface at high laser power density. The temperature rise is estimated from observed shifts in the Te and CdTe optical phonon peaks and modeled using finite-element simulations. At laser power 480 μW/μm2, the CdTe exhibits a rise of ~44 °C above room temperature while the observed change in Te temperature is significantly higher, ~179 °C. Furthermore, the approach illustrates steps needed to establish the laser damage threshold for CdTe.},
doi = {10.1116/1.5048526},
journal = {Journal of Vacuum Science and Technology. B, Nanotechnology and Microelectronics},
number = 5,
volume = 36,
place = {United States},
year = {Wed Sep 12 00:00:00 EDT 2018},
month = {Wed Sep 12 00:00:00 EDT 2018}
}

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