Uncovering edge states and electrical inhomogeneity in MoS2 field-effect transistors

Wu, Di; Li, Xiao; Luan, Lan; Wu, Xiaoyu; Li, Wei; Yogeesh, Maruthi N.; Ghosh, Rudresh; Chu, Zhaodong; Akinwande, Deji; Niu, Qian; Lai, Keji

doi:10.1073/pnas.1605982113

Title: Uncovering edge states and electrical inhomogeneity in MoS₂ field-effect transistors

Abstract

The performances of devices based on transition metal dichalcogenides (TMDs) are far from their intrinsic limits, presumably due to various disorders in these 2D crystals. To date, little is known about the magnitude and characteristic length scale of electrical inhomogeneity induced by the disorders in TMDs. In this paper, strong mesoscopic (submicrometer) electrical inhomogeneity in MoS₂ flakes, which reveals the potential fluctuations, was observed by a unique technique termed microwave impedance microscopy. The local conductance of edge states and its contribution to the transport were also resolved and analyzed experimentally for the first time, to our knowledge. Furthermore, the results provide a comprehensive understanding of the potential landscape in TMDs, which is very important for the improvement of device performance.

Authors:

^[1]; Li, Xiao ^[1]; Luan, Lan ^[1]; Wu, Xiaoyu ^[1]; Li, Wei ^[1]; Yogeesh, Maruthi N. ^[1]; Ghosh, Rudresh ^[1]; Chu, Zhaodong ^[1]; Akinwande, Deji ^[1]; Niu, Qian ^[1]; Lai, Keji ^[1]

Univ. of Texas, Austin, TX (United States)

Publication Date:: Thu Jul 21 00:00:00 EDT 2016

Research Org.:: Univ. of Texas, Austin, TX (United States)

Sponsoring Org.:: USDOE Office of Science (SC), Basic Energy Sciences (BES)

OSTI Identifier:: 1469663

Grant/Contract Number:: SC0010308

Resource Type:: Accepted Manuscript

Journal Name:: Proceedings of the National Academy of Sciences of the United States of America

Additional Journal Information:: Journal Volume: 113; Journal Issue: 31; Journal ID: ISSN 0027-8424

Publisher:: National Academy of Sciences, Washington, DC (United States)

Country of Publication:: United States

Language:: English

Subject:: 36 MATERIALS SCIENCE; MoS2; microwave impedance microscopy; edge states; electrical inhomogeneity; metal-insulator transition

Citation Formats


                    Wu, Di, Li, Xiao, Luan, Lan, Wu, Xiaoyu, Li, Wei, Yogeesh, Maruthi N., Ghosh, Rudresh, Chu, Zhaodong, Akinwande, Deji, Niu, Qian, and Lai, Keji. Uncovering edge states and electrical inhomogeneity in MoS2 field-effect transistors.  United States: N. p., 2016. 
Web.  doi:10.1073/pnas.1605982113.

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                    Wu, Di, Li, Xiao, Luan, Lan, Wu, Xiaoyu, Li, Wei, Yogeesh, Maruthi N., Ghosh, Rudresh, Chu, Zhaodong, Akinwande, Deji, Niu, Qian, & Lai, Keji. Uncovering edge states and electrical inhomogeneity in MoS2 field-effect transistors.  United States.  https://doi.org/10.1073/pnas.1605982113

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                    Wu, Di, Li, Xiao, Luan, Lan, Wu, Xiaoyu, Li, Wei, Yogeesh, Maruthi N., Ghosh, Rudresh, Chu, Zhaodong, Akinwande, Deji, Niu, Qian, and Lai, Keji. Thu .  
"Uncovering edge states and electrical inhomogeneity in MoS2 field-effect transistors".  United States.  https://doi.org/10.1073/pnas.1605982113.  https://www.osti.gov/servlets/purl/1469663.

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@article{osti_1469663,

  title        = {Uncovering edge states and electrical inhomogeneity in MoS2 field-effect transistors},

  author       = {Wu, Di and Li, Xiao and Luan, Lan and Wu, Xiaoyu and Li, Wei and Yogeesh, Maruthi N. and Ghosh, Rudresh and Chu, Zhaodong and Akinwande, Deji and Niu, Qian and Lai, Keji},

  abstractNote = {The performances of devices based on transition metal dichalcogenides (TMDs) are far from their intrinsic limits, presumably due to various disorders in these 2D crystals. To date, little is known about the magnitude and characteristic length scale of electrical inhomogeneity induced by the disorders in TMDs. In this paper, strong mesoscopic (submicrometer) electrical inhomogeneity in MoS2 flakes, which reveals the potential fluctuations, was observed by a unique technique termed microwave impedance microscopy. The local conductance of edge states and its contribution to the transport were also resolved and analyzed experimentally for the first time, to our knowledge. Furthermore, the results provide a comprehensive understanding of the potential landscape in TMDs, which is very important for the improvement of device performance.},

  doi          = {10.1073/pnas.1605982113},

  journal      = {Proceedings of the National Academy of Sciences of the United States of America},

  number       = 31,

  volume       = 113,

  place        = {United States},

  year         = {Thu Jul 21 00:00:00 EDT 2016},

  month        = {Thu Jul 21 00:00:00 EDT 2016}

}

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Title: Uncovering edge states and electrical inhomogeneity in MoS2 field-effect transistors

Abstract

Citation Formats

Generalized Gradient Approximation Made Simple journal, October 1996

Phonons in single-layer and few-layer MoS 2 and WS 2 journal, October 2011

Two-Dimensional Transition Metal Dichalcogenides under Electron Irradiation: Defect Production and Doping journal, July 2012

Electrical control of the valley Hall effect in bilayer MoS2 transistors journal, January 2016

Large-Area Monolayer MoS 2 for Flexible Low-Power RF Nanoelectronics in the GHz Regime journal, December 2015

One-Dimensional Metallic Edge States in MoS 2 journal, October 2001

Emerging Photoluminescence in Monolayer MoS2 journal, April 2010

Electrical tuning of valley magnetic moment through symmetry control in bilayer MoS2 journal, January 2013

Z2 Topological Order and the Quantum Spin Hall Effect journal, September 2005

Direct Imaging of Nanoscale Conductance Evolution in Ion-Gel-Gated Oxide Transistors journal, June 2015

Electronics and optoelectronics of two-dimensional transition metal dichalcogenides journal, November 2012

Carrier mobility of MoS 2 nanoribbons with edge chemical modification journal, January 2015

Efficient iterative schemes for ab initio total-energy calculations using a plane-wave basis set journal, October 1996

From ultrasoft pseudopotentials to the projector augmented-wave method journal, January 1999

Generation and electric control of spin–valley-coupled circular photogalvanic current in WSe2 journal, September 2014

Superconducting Dome in a Gate-Tuned Band Insulator journal, November 2012

Intrinsic Electronic Transport Properties of High-Quality Monolayer and Bilayer MoS 2 journal, August 2013

Direct Imaging of Band Profile in Single Layer MoS 2 on Graphite: Quasiparticle Energy Gap, Metallic Edge States, and Edge Band Bending journal, April 2014

Batch-fabricated cantilever probes with electrical shielding for nanoscale dielectric and conductivity imaging journal, October 2012

Phonon-limited mobility in n -type single-layer MoS 2 from first principles journal, March 2012

Quantized Hall conductance, current-carrying edge states, and the existence of extended states in a two-dimensional disordered potential journal, February 1982

Giant spin-orbit-induced spin splitting in two-dimensional transition-metal dichalcogenide semiconductors journal, October 2011

Quantum Spin Hall Effect journal, March 2006

Mobility engineering and a metal–insulator transition in monolayer MoS2 journal, June 2013

Electrically Switchable Chiral Light-Emitting Transistor journal, April 2014

Semiempirical GGA-type density functional constructed with a long-range dispersion correction journal, January 2006

MoS 2 Nanoribbons: High Stability and Unusual Electronic and Magnetic Properties journal, December 2008

Atomic-force-microscope-compatible near-field scanning microwave microscope with separated excitation and sensing probes journal, June 2007

Nanoscale microwave microscopy using shielded cantilever probes journal, April 2011

Raman Shifts in Electron-Irradiated Monolayer MoS 2 journal, March 2016

The valley Hall effect in MoS2 transistors journal, June 2014

Modeling and characterization of a cantilever-based near-field scanning microwave impedance microscope journal, June 2008

Hopping transport through defect-induced localized states in molybdenum disulphide journal, October 2013

Influence of Metal–MoS 2 Interface on MoS 2 Transistor Performance: Comparison of Ag and Ti Contacts journal, January 2015

Electric-field-induced superconductivity at 9.4 K in a layered transition metal disulphide MoS 2 journal, July 2012

Ambipolar MoS 2 Thin Flake Transistors journal, February 2012

Single-layer MoS2 transistors journal, January 2011

High Performance Multilayer MoS2Transistors with Scandium Contacts journal, December 2012

Mesoscale Imperfections in MoS 2 Atomic Layers Grown by a Vapor Transport Technique journal, July 2014

Superconductivity protected by spin–valley locking in ion-gated MoS2 journal, December 2015

Probing the electron states and metal-insulator transition mechanisms in molybdenum disulphide vertical heterostructures journal, January 2015

Zeeman-type spin splitting controlled by an electric field journal, July 2013

Nature of Electronic States in Atomically Thin MoS2 Field-Effect Transistors journal, October 2011

Unexpected edge conduction in mercury telluride quantum wells under broken time-reversal symmetry journal, May 2015

Microwave Near-Field Imaging of Two-Dimensional Semiconductors journal, January 2015

Reducing Dzyaloshinskii-Moriya interaction and field-free spin-orbit torque switching in synthetic antiferromagnets journal, May 2021

One-Dimensional Metallic Edge States in MoS2 text, January 2001

Imaging of the Coulomb driven quantum Hall edge states text, January 2011

The Nature of Electronic States in Atomically Thin MoS2 Field-Effect Transistors text, January 2012

Two-dimensional transition metal dichalcogenides under electron irradiation: defect production and doping text, January 2012

Mobility engineering and metal-insulator transition in monolayer MoS2 text, January 2013

Direct imaging of the band profile in single layer ${\small MoS_2}$ on graphite: quasiparticle energy gap, metallic edge states and edge band bending text, January 2014

Electrical control of the valley Hall effect in bilayer MoS2 transistors text, January 2015

Quantum Spin Hall Effect text, January 2005

Probing of Local Multifield Coupling Phenomena of Advanced Materials by Scanning Probe Microscopy Techniques journal, October 2018

The Holy Grail in Platinum‐Free Electrocatalytic Hydrogen Evolution: Molybdenum‐Based Catalysts and Recent Advances journal, June 2019

Environmental engineering of transition metal dichalcogenide optoelectronics journal, June 2018

Local electrical characterization of two-dimensional materials with functional atomic force microscopy journal, January 2019

Possible Luttinger liquid behavior of edge transport in monolayer transition metal dichalcogenide crystals journal, January 2020

Linear and nonlinear magneto-optical properties of monolayer MoS 2 journal, January 2018

Optically coupled methods for microwave impedance microscopy journal, April 2018

Quantitative measurements of nanoscale permittivity and conductivity using tuning-fork-based microwave impedance microscopy journal, April 2018

Impact of edge roughness on the electron transport properties of MoS 2 ribbons journal, December 2018

Phase transition and field effect topological quantum transistor made of monolayer MoS 2 journal, May 2018

Flexible modulation of electronic and magnetic properties of zigzag H-MoS 2 nanoribbons by crack defects journal, June 2018

One dimensional metallic edges in atomically thin WSe 2 induced by air exposure journal, March 2018

Local characterization of mobile charge carriers by two electrical AFM modes: multi-harmonic EFM versus sMIM journal, February 2018

Nondestructive imaging of atomically thin nanostructures buried in silicon journal, June 2017

Imaging quantum spin Hall edges in monolayer WTe 2 journal, February 2019

Nondestructive imaging of atomically thin nanostructures buried in silicon text, January 2017

Optically Coupled Methods for Microwave Impedance Microscopy text, January 2017

Phase Transition and Field Effect Topological Quantum Transistor made of monolayer MoS2 text, January 2018

Quantitative Measurements of Nanoscale Permittivity and Conductivity Using Tuning-fork-based Microwave Impedance Microscopy text, January 2018

Title: Uncovering edge states and electrical inhomogeneity in MoS₂ field-effect transistors

Generalized Gradient Approximation Made Simple
journal, October 1996

Phonons in single-layer and few-layer MoS $_{2}$ and WS $_{2}$
journal, October 2011

Two-Dimensional Transition Metal Dichalcogenides under Electron Irradiation: Defect Production and Doping
journal, July 2012

Electrical control of the valley Hall effect in bilayer MoS2 transistors
journal, January 2016

Large-Area Monolayer MoS ₂ for Flexible Low-Power RF Nanoelectronics in the GHz Regime
journal, December 2015

One-Dimensional Metallic Edge States in ${MoS}_{2}$
journal, October 2001

Emerging Photoluminescence in Monolayer MoS₂
journal, April 2010

Electrical tuning of valley magnetic moment through symmetry control in bilayer MoS2
journal, January 2013

$Z_{2}$ Topological Order and the Quantum Spin Hall Effect
journal, September 2005

Direct Imaging of Nanoscale Conductance Evolution in Ion-Gel-Gated Oxide Transistors
journal, June 2015

Electronics and optoelectronics of two-dimensional transition metal dichalcogenides
journal, November 2012

Carrier mobility of MoS ₂ nanoribbons with edge chemical modification
journal, January 2015

Efficient iterative schemes for ab initio total-energy calculations using a plane-wave basis set
journal, October 1996

From ultrasoft pseudopotentials to the projector augmented-wave method
journal, January 1999

Generation and electric control of spin–valley-coupled circular photogalvanic current in WSe2
journal, September 2014

Superconducting Dome in a Gate-Tuned Band Insulator
journal, November 2012

Intrinsic Electronic Transport Properties of High-Quality Monolayer and Bilayer MoS ₂
journal, August 2013

Direct Imaging of Band Profile in Single Layer MoS ₂ on Graphite: Quasiparticle Energy Gap, Metallic Edge States, and Edge Band Bending
journal, April 2014

Batch-fabricated cantilever probes with electrical shielding for nanoscale dielectric and conductivity imaging
journal, October 2012

Phonon-limited mobility in $n$ -type single-layer MoS $_{2}$ from first principles
journal, March 2012

Quantized Hall conductance, current-carrying edge states, and the existence of extended states in a two-dimensional disordered potential
journal, February 1982

Giant spin-orbit-induced spin splitting in two-dimensional transition-metal dichalcogenide semiconductors
journal, October 2011

Quantum Spin Hall Effect
journal, March 2006

Mobility engineering and a metal–insulator transition in monolayer MoS2
journal, June 2013

Electrically Switchable Chiral Light-Emitting Transistor
journal, April 2014

Semiempirical GGA-type density functional constructed with a long-range dispersion correction
journal, January 2006

MoS ₂ Nanoribbons: High Stability and Unusual Electronic and Magnetic Properties
journal, December 2008

Atomic-force-microscope-compatible near-field scanning microwave microscope with separated excitation and sensing probes
journal, June 2007

Nanoscale microwave microscopy using shielded cantilever probes
journal, April 2011

Raman Shifts in Electron-Irradiated Monolayer MoS ₂
journal, March 2016

The valley Hall effect in MoS2 transistors
journal, June 2014

Modeling and characterization of a cantilever-based near-field scanning microwave impedance microscope
journal, June 2008

Hopping transport through defect-induced localized states in molybdenum disulphide
journal, October 2013

Influence of Metal–MoS ₂ Interface on MoS ₂ Transistor Performance: Comparison of Ag and Ti Contacts
journal, January 2015

Electric-field-induced superconductivity at 9.4 K in a layered transition metal disulphide MoS ₂
journal, July 2012

Ambipolar MoS ₂ Thin Flake Transistors
journal, February 2012

Single-layer MoS₂ transistors
journal, January 2011

High Performance Multilayer MoS₂Transistors with Scandium Contacts
journal, December 2012

Mesoscale Imperfections in MoS ₂ Atomic Layers Grown by a Vapor Transport Technique
journal, July 2014

Superconductivity protected by spin–valley locking in ion-gated MoS2
journal, December 2015

Probing the electron states and metal-insulator transition mechanisms in molybdenum disulphide vertical heterostructures
journal, January 2015

Zeeman-type spin splitting controlled by an electric field
journal, July 2013

Nature of Electronic States in Atomically Thin MoS₂ Field-Effect Transistors
journal, October 2011

Unexpected edge conduction in mercury telluride quantum wells under broken time-reversal symmetry
journal, May 2015

Microwave Near-Field Imaging of Two-Dimensional Semiconductors
journal, January 2015

Reducing Dzyaloshinskii-Moriya interaction and field-free spin-orbit torque switching in synthetic antiferromagnets
journal, May 2021

One-Dimensional Metallic Edge States in MoS2
text, January 2001

Imaging of the Coulomb driven quantum Hall edge states
text, January 2011

The Nature of Electronic States in Atomically Thin MoS2 Field-Effect Transistors
text, January 2012

Two-dimensional transition metal dichalcogenides under electron irradiation: defect production and doping
text, January 2012

Mobility engineering and metal-insulator transition in monolayer MoS2
text, January 2013

Direct imaging of the band profile in single layer ${\small MoS_2}$ on graphite: quasiparticle energy gap, metallic edge states and edge band bending
text, January 2014

Electrical control of the valley Hall effect in bilayer MoS2 transistors
text, January 2015

Quantum Spin Hall Effect
text, January 2005

Probing of Local Multifield Coupling Phenomena of Advanced Materials by Scanning Probe Microscopy Techniques
journal, October 2018

The Holy Grail in Platinum‐Free Electrocatalytic Hydrogen Evolution: Molybdenum‐Based Catalysts and Recent Advances
journal, June 2019

Environmental engineering of transition metal dichalcogenide optoelectronics
journal, June 2018

Local electrical characterization of two-dimensional materials with functional atomic force microscopy
journal, January 2019

Possible Luttinger liquid behavior of edge transport in monolayer transition metal dichalcogenide crystals
journal, January 2020

Linear and nonlinear magneto-optical properties of monolayer MoS ₂
journal, January 2018

Optically coupled methods for microwave impedance microscopy
journal, April 2018

Quantitative measurements of nanoscale permittivity and conductivity using tuning-fork-based microwave impedance microscopy
journal, April 2018

Impact of edge roughness on the electron transport properties of MoS ₂ ribbons
journal, December 2018

Phase transition and field effect topological quantum transistor made of monolayer MoS ₂
journal, May 2018

Flexible modulation of electronic and magnetic properties of zigzag H-MoS ₂ nanoribbons by crack defects
journal, June 2018

One dimensional metallic edges in atomically thin WSe ₂ induced by air exposure
journal, March 2018

Local characterization of mobile charge carriers by two electrical AFM modes: multi-harmonic EFM versus sMIM
journal, February 2018

Nondestructive imaging of atomically thin nanostructures buried in silicon
journal, June 2017

Imaging quantum spin Hall edges in monolayer WTe ₂
journal, February 2019

Nondestructive imaging of atomically thin nanostructures buried in silicon
text, January 2017

Optically Coupled Methods for Microwave Impedance Microscopy
text, January 2017

Phase Transition and Field Effect Topological Quantum Transistor made of monolayer MoS2
text, January 2018

Quantitative Measurements of Nanoscale Permittivity and Conductivity Using Tuning-fork-based Microwave Impedance Microscopy
text, January 2018