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Title: Effect of thickness on dielectric, ferroelectric, and optical properties of Ni substituted Pb(Zr0.2Ti0.8)O3 thin films

Abstract

We report thickness dependent dielectric, ferroelectric, and optical properties of Ni substituted Pb(Zr0.2Ti0.8)O3 thin films. The Pb(Zr0.2Ti0.8)0.70Ni0.30O3-δ (PZTNi30) thin films for various thicknesses, ranging from 5 nm to 400 nm, were fabricated by pulsed laser deposition technique. Giant dielectric dispersion, low dielectric loss, large dielectric constant ~1000–1500 from 100 Hz to 100 kHz, and diffused dielectric anomaly near 570–630 K were observed in PZTNi30 thin films. These films show well saturated ferroelectric hysteresis, with large remanent polarization. It also illustrated excellent optical transparency which decreased from 82 to 72% with increasing film thickness from 5 nm to 400 nm for the probe wavelengths ranging from 200 to 1100 nm. A decrease in direct bandgap (Eg) values from 4 eV to 3.4 eV and indirect-Eg values from 3.5 eV to 2.9 eV were observed for PZTNi30 thin films with increase in film thickness from 5 nm to 400 nm, respectively. The direct and indirect bandgaps were discussed in context of film thickness and grain size effects. Our investigations on optical properties of PZTNi30 thin films suggest that bandgap can be modified as a function of film thickness which may be useful for readers working to develop novel candidates for ferroelectric photovoltaic.

Authors:
ORCiD logo [1];  [1];  [1];  [2];  [3];  [1]
  1. Univ. of Puerto Rico, San Juan, PR (United States)
  2. National Physical Laboratory (CSIR), Delhi, India
  3. Univ. of St. Andrews, Scotland (United Kingdom)
Publication Date:
Research Org.:
Univ. of Puerto Rico, San Juan, PR (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1469649
Alternate Identifier(s):
OSTI ID: 1225989
Grant/Contract Number:  
FG02-08ER46526
Resource Type:
Accepted Manuscript
Journal Name:
Journal of Applied Physics
Additional Journal Information:
Journal Volume: 118; Journal Issue: 18; Journal ID: ISSN 0021-8979
Publisher:
American Institute of Physics (AIP)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE

Citation Formats

Kumari, Shalini, Ortega, Nora, Pradhan, Dhiren K., Kumar, Ashok, Scott, J. F., and Katiyar, Ram S. Effect of thickness on dielectric, ferroelectric, and optical properties of Ni substituted Pb(Zr0.2Ti0.8)O3 thin films. United States: N. p., 2015. Web. doi:10.1063/1.4935481.
Kumari, Shalini, Ortega, Nora, Pradhan, Dhiren K., Kumar, Ashok, Scott, J. F., & Katiyar, Ram S. Effect of thickness on dielectric, ferroelectric, and optical properties of Ni substituted Pb(Zr0.2Ti0.8)O3 thin films. United States. doi:10.1063/1.4935481.
Kumari, Shalini, Ortega, Nora, Pradhan, Dhiren K., Kumar, Ashok, Scott, J. F., and Katiyar, Ram S. Fri . "Effect of thickness on dielectric, ferroelectric, and optical properties of Ni substituted Pb(Zr0.2Ti0.8)O3 thin films". United States. doi:10.1063/1.4935481. https://www.osti.gov/servlets/purl/1469649.
@article{osti_1469649,
title = {Effect of thickness on dielectric, ferroelectric, and optical properties of Ni substituted Pb(Zr0.2Ti0.8)O3 thin films},
author = {Kumari, Shalini and Ortega, Nora and Pradhan, Dhiren K. and Kumar, Ashok and Scott, J. F. and Katiyar, Ram S.},
abstractNote = {We report thickness dependent dielectric, ferroelectric, and optical properties of Ni substituted Pb(Zr0.2Ti0.8)O3 thin films. The Pb(Zr0.2Ti0.8)0.70Ni0.30O3-δ (PZTNi30) thin films for various thicknesses, ranging from 5 nm to 400 nm, were fabricated by pulsed laser deposition technique. Giant dielectric dispersion, low dielectric loss, large dielectric constant ~1000–1500 from 100 Hz to 100 kHz, and diffused dielectric anomaly near 570–630 K were observed in PZTNi30 thin films. These films show well saturated ferroelectric hysteresis, with large remanent polarization. It also illustrated excellent optical transparency which decreased from 82 to 72% with increasing film thickness from 5 nm to 400 nm for the probe wavelengths ranging from 200 to 1100 nm. A decrease in direct bandgap (Eg) values from 4 eV to 3.4 eV and indirect-Eg values from 3.5 eV to 2.9 eV were observed for PZTNi30 thin films with increase in film thickness from 5 nm to 400 nm, respectively. The direct and indirect bandgaps were discussed in context of film thickness and grain size effects. Our investigations on optical properties of PZTNi30 thin films suggest that bandgap can be modified as a function of film thickness which may be useful for readers working to develop novel candidates for ferroelectric photovoltaic.},
doi = {10.1063/1.4935481},
journal = {Journal of Applied Physics},
number = 18,
volume = 118,
place = {United States},
year = {2015},
month = {11}
}

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Cited by: 9 works
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