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Title: Switchable photovoltaic and polarization modulated rectification in Si-integrated Pt/(Bi 0.9Sm 0.1)(Fe 0.97Hf 0.03)O 3/LaNiO 3 heterostructures

In this paper, we studied switchable photovoltaic and photo-diode characteristics of Pt/(Bi 0.9Sm 0.1)(Fe 0.97Hf 0.03)O 3/ LaNiO 3 (Pt/BSFHO/LNO) heterostructures integrated on Si (100). The directions of photocurrent (J SC) and rectification are found to be reversibly switchable after applying external poling voltages. In pristine state, metal-ferroelectric-metal capacitor Pt/BSFHO/LNO shows J SC ~ 32 μA/cm 2 and V OC ~ 0.04 V, which increase to maximum value of J SC ~ 303 (-206) μA/cm 2 and V OC ~ -0.32 (0.26) V after upward (downward) poling at ±8 V. Finally, we believe that Schottky barrier modulation by polarization flipping at Pt/BSFHO interface could be a main driving force behind switchable photovoltaic and rectifying diode characteristics of Pt/BSFHO/LNO heterostructures.
Authors:
 [1] ; ORCiD logo [1] ;  [1]
  1. Univ. of Puerto Rico, San Juan, PR (United States). Dept. of Physics. Inst. for Functional Nanomaterials
Publication Date:
Grant/Contract Number:
FG02-08ER46526; 1002410
Type:
Accepted Manuscript
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 107; Journal Issue: 16; Journal ID: ISSN 0003-6951
Publisher:
American Institute of Physics (AIP)
Research Org:
Univ. of Puerto Rico, San Juan, PR (United States)
Sponsoring Org:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22); National Science Foundation (NSF)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; heterostructures; ferroelectric materials; photoconductivity; thin films; electronic bandstructure; photovoltaics; Schottky barriers; crystallographic defects; electrical properties and parameters; magnetic hysteresis
OSTI Identifier:
1469589
Alternate Identifier(s):
OSTI ID: 1224326