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Title: Switchable photovoltaic and polarization modulated rectification in Si-integrated Pt/(Bi 0.9Sm 0.1)(Fe 0.97Hf 0.03)O 3/LaNiO 3 heterostructures

Abstract

In this paper, we studied switchable photovoltaic and photo-diode characteristics of Pt/(Bi 0.9Sm 0.1)(Fe 0.97Hf 0.03)O 3/ LaNiO 3 (Pt/BSFHO/LNO) heterostructures integrated on Si (100). The directions of photocurrent (J SC) and rectification are found to be reversibly switchable after applying external poling voltages. In pristine state, metal-ferroelectric-metal capacitor Pt/BSFHO/LNO shows J SC ~ 32 μA/cm 2 and V OC ~ 0.04 V, which increase to maximum value of J SC ~ 303 (-206) μA/cm 2 and V OC ~ -0.32 (0.26) V after upward (downward) poling at ±8 V. Finally, we believe that Schottky barrier modulation by polarization flipping at Pt/BSFHO interface could be a main driving force behind switchable photovoltaic and rectifying diode characteristics of Pt/BSFHO/LNO heterostructures.

Authors:
 [1]; ORCiD logo [1];  [1]
  1. Univ. of Puerto Rico, San Juan, PR (United States). Dept. of Physics. Inst. for Functional Nanomaterials
Publication Date:
Research Org.:
Univ. of Puerto Rico, San Juan, PR (United States)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22); National Science Foundation (NSF)
OSTI Identifier:
1469589
Alternate Identifier(s):
OSTI ID: 1224326
Grant/Contract Number:  
FG02-08ER46526; 1002410
Resource Type:
Accepted Manuscript
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 107; Journal Issue: 16; Journal ID: ISSN 0003-6951
Publisher:
American Institute of Physics (AIP)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; heterostructures; ferroelectric materials; photoconductivity; thin films; electronic bandstructure; photovoltaics; Schottky barriers; crystallographic defects; electrical properties and parameters; magnetic hysteresis

Citation Formats

Agarwal, Radhe, Sharma, Yogesh, and Katiyar, Ram S. Switchable photovoltaic and polarization modulated rectification in Si-integrated Pt/(Bi0.9Sm0.1)(Fe0.97Hf0.03)O3/LaNiO3 heterostructures. United States: N. p., 2015. Web. doi:10.1063/1.4934665.
Agarwal, Radhe, Sharma, Yogesh, & Katiyar, Ram S. Switchable photovoltaic and polarization modulated rectification in Si-integrated Pt/(Bi0.9Sm0.1)(Fe0.97Hf0.03)O3/LaNiO3 heterostructures. United States. doi:10.1063/1.4934665.
Agarwal, Radhe, Sharma, Yogesh, and Katiyar, Ram S. Fri . "Switchable photovoltaic and polarization modulated rectification in Si-integrated Pt/(Bi0.9Sm0.1)(Fe0.97Hf0.03)O3/LaNiO3 heterostructures". United States. doi:10.1063/1.4934665. https://www.osti.gov/servlets/purl/1469589.
@article{osti_1469589,
title = {Switchable photovoltaic and polarization modulated rectification in Si-integrated Pt/(Bi0.9Sm0.1)(Fe0.97Hf0.03)O3/LaNiO3 heterostructures},
author = {Agarwal, Radhe and Sharma, Yogesh and Katiyar, Ram S.},
abstractNote = {In this paper, we studied switchable photovoltaic and photo-diode characteristics of Pt/(Bi0.9Sm0.1)(Fe0.97Hf0.03)O3/ LaNiO3 (Pt/BSFHO/LNO) heterostructures integrated on Si (100). The directions of photocurrent (JSC) and rectification are found to be reversibly switchable after applying external poling voltages. In pristine state, metal-ferroelectric-metal capacitor Pt/BSFHO/LNO shows JSC ~ 32 μA/cm2 and VOC ~ 0.04 V, which increase to maximum value of JSC ~ 303 (-206) μA/cm2 and VOC ~ -0.32 (0.26) V after upward (downward) poling at ±8 V. Finally, we believe that Schottky barrier modulation by polarization flipping at Pt/BSFHO interface could be a main driving force behind switchable photovoltaic and rectifying diode characteristics of Pt/BSFHO/LNO heterostructures.},
doi = {10.1063/1.4934665},
journal = {Applied Physics Letters},
number = 16,
volume = 107,
place = {United States},
year = {2015},
month = {10}
}

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