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Title: Accessing a growth window for SrVO 3 thin films

Stoichiometric SrVO 3 thin films were grown over a range of cation fluxes on (001) (La 0.3Sr 0.7)(Al 0.65Ta 0.35)O 3 substrates using hybrid molecular beam epitaxy, where a thermal effusion cell was employed to generate a Sr flux and V was supplied using the metal-organic precursor vanadium oxytriisopropoxide (VTIP). By systematically varying the VTIP flux while keeping the Sr flux constant, a range of flux ratios were discovered in which the structural and electronic properties of the SrVO 3 films remained unaltered. The intrinsic film lattice parameter and residual resistivity were found to be the smallest inside the growth window, indicating the lowest defect concentration of the films, and rapidly increased for cation flux ratios deviating from ideal growth condition. Reflection high-energy electron diffraction showed that films grown within this range had smooth surfaces and diffraction patterns were free of additional spots, while otherwise the growing surface was rough and contained additional crystalline phases. Here, results show the existence of a SrVO 3 growth window at sufficiently high growth temperature, in which high-quality, stoichiometric films can be grown in a robust, highly reproducible manner that is invulnerable to unintentional flux variation.
Authors:
 [1] ; ORCiD logo [1] ;  [1] ; ORCiD logo [1] ;  [1]
  1. Pennsylvania State Univ., University Park, PA (United States)
Publication Date:
Grant/Contract Number:
SC0012375
Type:
Accepted Manuscript
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 107; Journal Issue: 14; Journal ID: ISSN 0003-6951
Publisher:
American Institute of Physics (AIP)
Research Org:
Pennsylvania State Univ., University Park, PA (United States)
Sponsoring Org:
USDOE Office of Science (SC)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS
OSTI Identifier:
1469382
Alternate Identifier(s):
OSTI ID: 1223041

Brahlek, Matthew, Zhang, Lei, Eaton, Craig, Zhang, Hai -Tian, and Engel-Herbert, Roman. Accessing a growth window for SrVO3 thin films. United States: N. p., Web. doi:10.1063/1.4932198.
Brahlek, Matthew, Zhang, Lei, Eaton, Craig, Zhang, Hai -Tian, & Engel-Herbert, Roman. Accessing a growth window for SrVO3 thin films. United States. doi:10.1063/1.4932198.
Brahlek, Matthew, Zhang, Lei, Eaton, Craig, Zhang, Hai -Tian, and Engel-Herbert, Roman. 2015. "Accessing a growth window for SrVO3 thin films". United States. doi:10.1063/1.4932198. https://www.osti.gov/servlets/purl/1469382.
@article{osti_1469382,
title = {Accessing a growth window for SrVO3 thin films},
author = {Brahlek, Matthew and Zhang, Lei and Eaton, Craig and Zhang, Hai -Tian and Engel-Herbert, Roman},
abstractNote = {Stoichiometric SrVO3 thin films were grown over a range of cation fluxes on (001) (La0.3Sr0.7)(Al0.65Ta0.35)O3 substrates using hybrid molecular beam epitaxy, where a thermal effusion cell was employed to generate a Sr flux and V was supplied using the metal-organic precursor vanadium oxytriisopropoxide (VTIP). By systematically varying the VTIP flux while keeping the Sr flux constant, a range of flux ratios were discovered in which the structural and electronic properties of the SrVO3 films remained unaltered. The intrinsic film lattice parameter and residual resistivity were found to be the smallest inside the growth window, indicating the lowest defect concentration of the films, and rapidly increased for cation flux ratios deviating from ideal growth condition. Reflection high-energy electron diffraction showed that films grown within this range had smooth surfaces and diffraction patterns were free of additional spots, while otherwise the growing surface was rough and contained additional crystalline phases. Here, results show the existence of a SrVO3 growth window at sufficiently high growth temperature, in which high-quality, stoichiometric films can be grown in a robust, highly reproducible manner that is invulnerable to unintentional flux variation.},
doi = {10.1063/1.4932198},
journal = {Applied Physics Letters},
number = 14,
volume = 107,
place = {United States},
year = {2015},
month = {10}
}