Balance Between Light Absorption and Recombination Losses in Solution‐Processed Small Molecule Solar Cells with Normal or Inverted Structures
Abstract
Abstract Comparison of the photovoltaic properties of F3:fullerene bulk heterojunction solar cells (where F3 is a donor molecule of intermediate dimensions) with normal and inverted structures as a function of photoactive layer thickness is carried out by using optical modeling and light‐dependent photoelectrical characterization. The larger short circuit current of inverted devices can be explained by higher light absorption in the active layer, relative to normal devices. However, worse charge extraction conditions and trap‐assisted recombination, in the bulk heterojunction blend in inverted devices, give rise to larger nongeminate recombination losses and an opposite thickness dependence of the short circuit current and fill factor than what is observed in counterparts with the conventional device architecture.
- Authors:
-
- Center for Polymers and Organic Solids Department of Chemistry and Biochemistry University of California at Santa Barbara Santa Barbara CA 93106 USA
- Center for Polymers and Organic Solids Department of Chemistry and Biochemistry University of California at Santa Barbara Santa Barbara CA 93106 USA, Future Technology Research Center Corporate R&,D, LG Chem Research Park, 188, Moonji‐ro Yuseong‐gu Daejeon 34122 Republic of Korea, Center for Energy Materials Korea Research Institute of Chemical Technology, (KRICT) 141 Gajeongro Yuseong Daejeon 34114 Republic of Korea
- Future Technology Research Center Corporate R&,D, LG Chem Research Park, 188, Moonji‐ro Yuseong‐gu Daejeon 34122 Republic of Korea
- Publication Date:
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 1469242
- Resource Type:
- Publisher's Accepted Manuscript
- Journal Name:
- Advanced Energy Materials
- Additional Journal Information:
- Journal Name: Advanced Energy Materials Journal Volume: 8 Journal Issue: 29; Journal ID: ISSN 1614-6832
- Publisher:
- Wiley Blackwell (John Wiley & Sons)
- Country of Publication:
- Germany
- Language:
- English
Citation Formats
Brus, Viktor V., Lee, Hang Ken, Proctor, Christopher M., Ford, Michael, Liu, Xiaofeng, Burgers, Mark A., Lee, Jaechol, Bazan, Guillermo C., and Nguyen, Thuc‐Quyen. Balance Between Light Absorption and Recombination Losses in Solution‐Processed Small Molecule Solar Cells with Normal or Inverted Structures. Germany: N. p., 2018.
Web. doi:10.1002/aenm.201801807.
Brus, Viktor V., Lee, Hang Ken, Proctor, Christopher M., Ford, Michael, Liu, Xiaofeng, Burgers, Mark A., Lee, Jaechol, Bazan, Guillermo C., & Nguyen, Thuc‐Quyen. Balance Between Light Absorption and Recombination Losses in Solution‐Processed Small Molecule Solar Cells with Normal or Inverted Structures. Germany. https://doi.org/10.1002/aenm.201801807
Brus, Viktor V., Lee, Hang Ken, Proctor, Christopher M., Ford, Michael, Liu, Xiaofeng, Burgers, Mark A., Lee, Jaechol, Bazan, Guillermo C., and Nguyen, Thuc‐Quyen. Mon .
"Balance Between Light Absorption and Recombination Losses in Solution‐Processed Small Molecule Solar Cells with Normal or Inverted Structures". Germany. https://doi.org/10.1002/aenm.201801807.
@article{osti_1469242,
title = {Balance Between Light Absorption and Recombination Losses in Solution‐Processed Small Molecule Solar Cells with Normal or Inverted Structures},
author = {Brus, Viktor V. and Lee, Hang Ken and Proctor, Christopher M. and Ford, Michael and Liu, Xiaofeng and Burgers, Mark A. and Lee, Jaechol and Bazan, Guillermo C. and Nguyen, Thuc‐Quyen},
abstractNote = {Abstract Comparison of the photovoltaic properties of F3:fullerene bulk heterojunction solar cells (where F3 is a donor molecule of intermediate dimensions) with normal and inverted structures as a function of photoactive layer thickness is carried out by using optical modeling and light‐dependent photoelectrical characterization. The larger short circuit current of inverted devices can be explained by higher light absorption in the active layer, relative to normal devices. However, worse charge extraction conditions and trap‐assisted recombination, in the bulk heterojunction blend in inverted devices, give rise to larger nongeminate recombination losses and an opposite thickness dependence of the short circuit current and fill factor than what is observed in counterparts with the conventional device architecture.},
doi = {10.1002/aenm.201801807},
journal = {Advanced Energy Materials},
number = 29,
volume = 8,
place = {Germany},
year = {Mon Sep 10 00:00:00 EDT 2018},
month = {Mon Sep 10 00:00:00 EDT 2018}
}
https://doi.org/10.1002/aenm.201801807
Web of Science
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