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Title: High performance mid-temperature selective absorber based on titanium oxides cermet deposited by direct current reactive sputtering of a single titanium target

This paper reports the design and fabrication of a new double cermet-based low-mid temperature solar selective absorber based on TiO x cermet layers, which were deposited with a single Ti target by varying O 2 partial pressure in sputtering chamber as reactive gas. High metal volume fraction cermet 1 and low metal volume fraction cermet 2 were deposited with O 2 partial pressure of 0.15 mTorr and 0.25 mTorr, respectively, with direct current power density of 6.58 W cm -2. The complex refractive indices from ellipsometry were used to design solar selective absorber. The reflectance, thermal stability, and morphology were studied in absorbers on Cu and stainless steel. The effect of TiO 2 and SiO 2 as anti-reflective coating layers was investigated. Finally, the absorber on Cu substrate has high absorptance of 90.8% and low emittance of 4.9% (100 °C), and changed to 96.0% and 6.6%, respectively, after annealing at 300 °C for 4 days.
Authors:
ORCiD logo [1] ;  [1] ;  [2] ;  [2] ;  [1]
  1. Univ. of Houston, TX (United States). Dept. of Physics. Texas Center for Superconductivity (TcSUH)
  2. Univ. of Houston, TX (United States). Dept. of Electrical and Computer Engineering
Publication Date:
Grant/Contract Number:
SC0001299; E-1728; ECCS-1240510
Type:
Accepted Manuscript
Journal Name:
Journal of Applied Physics
Additional Journal Information:
Journal Volume: 119; Journal Issue: 4; Journal ID: ISSN 0021-8979
Publisher:
American Institute of Physics (AIP)
Research Org:
Univ. of Houston, TX (United States)
Sponsoring Org:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22); Robert A. Welch Foundation (United States); National Science Foundation (NSF)
Country of Publication:
United States
Language:
English
Subject:
42 ENGINEERING; optical instruments; solar energy; metal oxides; sputter deposition; transition metals; thin films; chemical elements; solar architecture; optical properties; thermodynamic states and processes
OSTI Identifier:
1469184
Alternate Identifier(s):
OSTI ID: 1235798

Tang, Lu, Cao, Feng, Li, Yang, Bao, Jiming, and Ren, Zhifeng. High performance mid-temperature selective absorber based on titanium oxides cermet deposited by direct current reactive sputtering of a single titanium target. United States: N. p., Web. doi:10.1063/1.4940386.
Tang, Lu, Cao, Feng, Li, Yang, Bao, Jiming, & Ren, Zhifeng. High performance mid-temperature selective absorber based on titanium oxides cermet deposited by direct current reactive sputtering of a single titanium target. United States. doi:10.1063/1.4940386.
Tang, Lu, Cao, Feng, Li, Yang, Bao, Jiming, and Ren, Zhifeng. 2016. "High performance mid-temperature selective absorber based on titanium oxides cermet deposited by direct current reactive sputtering of a single titanium target". United States. doi:10.1063/1.4940386. https://www.osti.gov/servlets/purl/1469184.
@article{osti_1469184,
title = {High performance mid-temperature selective absorber based on titanium oxides cermet deposited by direct current reactive sputtering of a single titanium target},
author = {Tang, Lu and Cao, Feng and Li, Yang and Bao, Jiming and Ren, Zhifeng},
abstractNote = {This paper reports the design and fabrication of a new double cermet-based low-mid temperature solar selective absorber based on TiOx cermet layers, which were deposited with a single Ti target by varying O2 partial pressure in sputtering chamber as reactive gas. High metal volume fraction cermet 1 and low metal volume fraction cermet 2 were deposited with O2 partial pressure of 0.15 mTorr and 0.25 mTorr, respectively, with direct current power density of 6.58 W cm-2. The complex refractive indices from ellipsometry were used to design solar selective absorber. The reflectance, thermal stability, and morphology were studied in absorbers on Cu and stainless steel. The effect of TiO2 and SiO2 as anti-reflective coating layers was investigated. Finally, the absorber on Cu substrate has high absorptance of 90.8% and low emittance of 4.9% (100 °C), and changed to 96.0% and 6.6%, respectively, after annealing at 300 °C for 4 days.},
doi = {10.1063/1.4940386},
journal = {Journal of Applied Physics},
number = 4,
volume = 119,
place = {United States},
year = {2016},
month = {1}
}