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Title: Modeling the effects of molecular disorder on the properties of Frenkel excitons in organic molecular semiconductors

Authors:
 [1] ; ORCiD logo [1]
  1. Department of Chemistry, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, USA
Publication Date:
Grant/Contract Number:
AC02-05CH11231; SC0001088
Type:
Publisher's Accepted Manuscript
Journal Name:
Journal of Chemical Physics
Additional Journal Information:
Journal Name: Journal of Chemical Physics Journal Volume: 149 Journal Issue: 9; Journal ID: ISSN 0021-9606
Publisher:
American Institute of Physics
Sponsoring Org:
USDOE
Country of Publication:
United States
Language:
English
OSTI Identifier:
1469046

Shi, Liang, and Willard, Adam P. Modeling the effects of molecular disorder on the properties of Frenkel excitons in organic molecular semiconductors. United States: N. p., Web. doi:10.1063/1.5044553.
Shi, Liang, & Willard, Adam P. Modeling the effects of molecular disorder on the properties of Frenkel excitons in organic molecular semiconductors. United States. doi:10.1063/1.5044553.
Shi, Liang, and Willard, Adam P. 2018. "Modeling the effects of molecular disorder on the properties of Frenkel excitons in organic molecular semiconductors". United States. doi:10.1063/1.5044553.
@article{osti_1469046,
title = {Modeling the effects of molecular disorder on the properties of Frenkel excitons in organic molecular semiconductors},
author = {Shi, Liang and Willard, Adam P.},
abstractNote = {},
doi = {10.1063/1.5044553},
journal = {Journal of Chemical Physics},
number = 9,
volume = 149,
place = {United States},
year = {2018},
month = {9}
}

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