Plasmon-mediated energy relaxation in graphene

Journal Article · 27 December 2015 · Applied Physics Letters

DOI: https://doi.org/10.1063/1.4938760 · OSTI ID:1468794

Ferry, D. K.  ^[1]; Somphonsane, R. ^[2]; Ramamoorthy, H. ^[3]; Bird, J. P. ^[3]

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1. Arizona State Univ., Tempe, AZ (United States). School of Electrical, Computer, and Energy Engineering; None
2. King Mongkut’s Inst. of Technology, Bangkok (Thailand). Dept. of Physics
3. State Univ. of New York (SUNY), Buffalo, NY (United States). Dept. of Electrical Engineering

Energy relaxation of hot carriers in graphene is studied at low temperatures, where the loss rate may differ significantly from that predicted for electron-phonon interactions. We show here that plasmons, important in the relaxation of energetic carriers in bulk semiconductors, can also provide a pathway for energy relaxation in transport experiments in graphene. We obtain a total loss rate to plasmons that results in energy relaxation times whose dependence on temperature and density closely matches that found experimentally.

• Research Organization: State Univ. of New York, Buffalo, NY (United States)
• Sponsoring Organization: Thailand Research Fund; USDOE
• Grant/Contract Number: FG02-04ER46180
• OSTI ID: 1468794
• Journal Information: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 26 Vol. 107; ISSN APPLAB; ISSN 0003-6951
• Publisher: American Institute of Physics (AIP)Copyright Statement
• Country of Publication: United States
• Language: English