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Title: Plasmon-mediated energy relaxation in graphene

Energy relaxation of hot carriers in graphene is studied at low temperatures, where the loss rate may differ significantly from that predicted for electron-phonon interactions. We show here that plasmons, important in the relaxation of energetic carriers in bulk semiconductors, can also provide a pathway for energy relaxation in transport experiments in graphene. We obtain a total loss rate to plasmons that results in energy relaxation times whose dependence on temperature and density closely matches that found experimentally.
Authors:
ORCiD logo [1] ;  [2] ;  [3] ;  [3]
  1. Arizona State Univ., Tempe, AZ (United States). School of Electrical, Computer, and Energy Engineering
  2. King Mongkut’s Inst. of Technology, Bangkok (Thailand). Dept. of Physics
  3. State Univ. of New York (SUNY), Buffalo, NY (United States). Dept. of Electrical Engineering
Publication Date:
Grant/Contract Number:
FG02-04ER46180
Type:
Accepted Manuscript
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 107; Journal Issue: 26; Journal ID: ISSN 0003-6951
Publisher:
American Institute of Physics (AIP)
Research Org:
State Univ. of New York, Buffalo, NY (United States)
Sponsoring Org:
USDOE; Thailand Research Fund
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE
OSTI Identifier:
1468794
Alternate Identifier(s):
OSTI ID: 1234026

Ferry, D. K., Somphonsane, R., Ramamoorthy, H., and Bird, J. P.. Plasmon-mediated energy relaxation in graphene. United States: N. p., Web. doi:10.1063/1.4938760.
Ferry, D. K., Somphonsane, R., Ramamoorthy, H., & Bird, J. P.. Plasmon-mediated energy relaxation in graphene. United States. doi:10.1063/1.4938760.
Ferry, D. K., Somphonsane, R., Ramamoorthy, H., and Bird, J. P.. 2015. "Plasmon-mediated energy relaxation in graphene". United States. doi:10.1063/1.4938760. https://www.osti.gov/servlets/purl/1468794.
@article{osti_1468794,
title = {Plasmon-mediated energy relaxation in graphene},
author = {Ferry, D. K. and Somphonsane, R. and Ramamoorthy, H. and Bird, J. P.},
abstractNote = {Energy relaxation of hot carriers in graphene is studied at low temperatures, where the loss rate may differ significantly from that predicted for electron-phonon interactions. We show here that plasmons, important in the relaxation of energetic carriers in bulk semiconductors, can also provide a pathway for energy relaxation in transport experiments in graphene. We obtain a total loss rate to plasmons that results in energy relaxation times whose dependence on temperature and density closely matches that found experimentally.},
doi = {10.1063/1.4938760},
journal = {Applied Physics Letters},
number = 26,
volume = 107,
place = {United States},
year = {2015},
month = {12}
}