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Title: Effect of the SiO 2 interlayer properties with solid-source hydrogenation on passivated contact performance and surface passivation

We investigate how SiO x oxide interlayers prepared by different techniques (chemical, thermal) in combination with hydrogen released from an ALD Al 2O 3 source layer govern passivation in 1) passivated contacts based on doped poly-Si layers and tunneling SiO 2, and 2) wafer surface passivation by Al 2O 3. Profiles of O and H in these structures with engineered, buried SiOx interlayers were measured by Time-of-Flight SIMS (TOF-SIMS) at nanometer resolution. Passivated contacts perform best with thermally oxidized SiOx, while chemical SiO x causes poly-Si film blistering and performance degradation. ALD Al 2O 3 acts as passivating H source, significantly improving B-doped and intrinsic poly-Si contacts for IBC cells. Fast-diffusing hydrogen from the Al 2O 3 source layer appears to penetrate Si wafer thickness, improving the passivation of structures at the opposite side. In contrast to the passivated contacts, chemical SiOx interlayer promotes wafer surface passivation by ALD Al 2O 3, while similarly thin thermal SiO 2 suppresses passivation and built-in charge.
Authors:
 [1] ; ORCiD logo [1] ;  [2] ;  [1] ;  [3] ;  [1] ;  [1] ;  [1] ;  [1]
  1. National Renewable Energy Laboratory (NREL), Golden, CO (United States)
  2. Texas State Univ., San marcos, TX (United States)
  3. Georgia Inst. of Technology, Atlanta, GA (United States)
Publication Date:
Report Number(s):
NREL/JA-5J00-68706
Journal ID: ISSN 1876-6102
Grant/Contract Number:
AC36-08GO28308
Type:
Accepted Manuscript
Journal Name:
Energy Procedia
Additional Journal Information:
Journal Volume: 124; Journal Issue: C; Journal ID: ISSN 1876-6102
Publisher:
Elsevier
Research Org:
National Renewable Energy Lab. (NREL), Golden, CO (United States)
Sponsoring Org:
USDOE Office of Energy Efficiency and Renewable Energy (EERE), Solar Energy Technologies Office (EE-4S)
Country of Publication:
United States
Language:
English
Subject:
14 SOLAR ENERGY; 36 MATERIALS SCIENCE; 25 ENERGY STORAGE; silicon; passivation; passivated contact; polysilicon; Al2O3
OSTI Identifier:
1468739

Nemeth, William M., Harvey, Steven P., Li, Jian V., Young, David L., Upadhyaya, Ajay, LaSalvia, Vincenzo A., Lee, Benjamin G., Page, Matthew, and Stradins, Paul. Effect of the SiO2 interlayer properties with solid-source hydrogenation on passivated contact performance and surface passivation. United States: N. p., Web. doi:10.1016/j.egypro.2017.09.302.
Nemeth, William M., Harvey, Steven P., Li, Jian V., Young, David L., Upadhyaya, Ajay, LaSalvia, Vincenzo A., Lee, Benjamin G., Page, Matthew, & Stradins, Paul. Effect of the SiO2 interlayer properties with solid-source hydrogenation on passivated contact performance and surface passivation. United States. doi:10.1016/j.egypro.2017.09.302.
Nemeth, William M., Harvey, Steven P., Li, Jian V., Young, David L., Upadhyaya, Ajay, LaSalvia, Vincenzo A., Lee, Benjamin G., Page, Matthew, and Stradins, Paul. 2017. "Effect of the SiO2 interlayer properties with solid-source hydrogenation on passivated contact performance and surface passivation". United States. doi:10.1016/j.egypro.2017.09.302. https://www.osti.gov/servlets/purl/1468739.
@article{osti_1468739,
title = {Effect of the SiO2 interlayer properties with solid-source hydrogenation on passivated contact performance and surface passivation},
author = {Nemeth, William M. and Harvey, Steven P. and Li, Jian V. and Young, David L. and Upadhyaya, Ajay and LaSalvia, Vincenzo A. and Lee, Benjamin G. and Page, Matthew and Stradins, Paul},
abstractNote = {We investigate how SiOx oxide interlayers prepared by different techniques (chemical, thermal) in combination with hydrogen released from an ALD Al2O3 source layer govern passivation in 1) passivated contacts based on doped poly-Si layers and tunneling SiO2, and 2) wafer surface passivation by Al2O3. Profiles of O and H in these structures with engineered, buried SiOx interlayers were measured by Time-of-Flight SIMS (TOF-SIMS) at nanometer resolution. Passivated contacts perform best with thermally oxidized SiOx, while chemical SiOx causes poly-Si film blistering and performance degradation. ALD Al2O3 acts as passivating H source, significantly improving B-doped and intrinsic poly-Si contacts for IBC cells. Fast-diffusing hydrogen from the Al2O3 source layer appears to penetrate Si wafer thickness, improving the passivation of structures at the opposite side. In contrast to the passivated contacts, chemical SiOx interlayer promotes wafer surface passivation by ALD Al2O3, while similarly thin thermal SiO2 suppresses passivation and built-in charge.},
doi = {10.1016/j.egypro.2017.09.302},
journal = {Energy Procedia},
number = C,
volume = 124,
place = {United States},
year = {2017},
month = {9}
}