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Title: Two-stage proximity-induced gap opening in topological-insulator–insulating-ferromagnet ( Bi x Sb 1 - x ) 2 Te 3 EuS bilayers

Abstract

To further investigate the interplay between ferromagnetism and topological insulators, thin films of the low-carrier topological insulator (Bix Sb1 - x)2 Te3 were deposited on the insulating ferromagnet EuS (100) in situ. AC susceptibility indicates magnetic anomalies between T ≈ 30 K and T ≈ 60 K , well above the Curie temperature TC ≈ 15 K of EuS. When the Fermi level is close to the Dirac point and the surface state dominates the electric conduction, sharp increases in resistance with decreasing temperatures were observed concurrently with the magnetic anomalies. Positive-negative magnetoresistance crossovers were observed at the Curie temperature, which seem only to appear when the sheet resistance exceeds the Mott-Ioffe-Regel limit h/e2. Finally, a two-stage gap-opening process due to magnetic proximity is proposed.

Authors:
 [1];  [2]
  1. Stanford Univ., CA (United States). Dept. of Physics; Stanford Univ., CA (United States). Geballe Lab. for Advanced Materials; SLAC National Accelerator Lab., Menlo Park, CA (United States). Stanford Institute for Materials and Energy Science (SIMES)
  2. Stanford Univ., CA (United States). Dept. of Physics and Dept. of Applied Physics; Stanford Univ., CA (United States). Geballe Lab. for Advanced Materials
Publication Date:
Research Org.:
SLAC National Accelerator Lab., Menlo Park, CA (United States)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES)
OSTI Identifier:
1468727
Alternate Identifier(s):
OSTI ID: 1463762
Grant/Contract Number:  
ECCS-1542152; AC02-76SF00515; N66001-11-1-4105
Resource Type:
Accepted Manuscript
Journal Name:
Physical Review B
Additional Journal Information:
Journal Volume: 98; Journal Issue: 8; Journal ID: ISSN 2469-9950
Publisher:
American Physical Society (APS)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY

Citation Formats

Yang, Qi I., and Kapitulnik, Aharon. Two-stage proximity-induced gap opening in topological-insulator–insulating-ferromagnet (BixSb1-x)2Te3 – EuS bilayers. United States: N. p., 2018. Web. doi:10.1103/physrevb.98.081403.
Yang, Qi I., & Kapitulnik, Aharon. Two-stage proximity-induced gap opening in topological-insulator–insulating-ferromagnet (BixSb1-x)2Te3 – EuS bilayers. United States. https://doi.org/10.1103/physrevb.98.081403
Yang, Qi I., and Kapitulnik, Aharon. Thu . "Two-stage proximity-induced gap opening in topological-insulator–insulating-ferromagnet (BixSb1-x)2Te3 – EuS bilayers". United States. https://doi.org/10.1103/physrevb.98.081403. https://www.osti.gov/servlets/purl/1468727.
@article{osti_1468727,
title = {Two-stage proximity-induced gap opening in topological-insulator–insulating-ferromagnet (BixSb1-x)2Te3 – EuS bilayers},
author = {Yang, Qi I. and Kapitulnik, Aharon},
abstractNote = {To further investigate the interplay between ferromagnetism and topological insulators, thin films of the low-carrier topological insulator (Bix Sb1 - x)2 Te3 were deposited on the insulating ferromagnet EuS (100) in situ. AC susceptibility indicates magnetic anomalies between T ≈ 30 K and T ≈ 60 K , well above the Curie temperature TC ≈ 15 K of EuS. When the Fermi level is close to the Dirac point and the surface state dominates the electric conduction, sharp increases in resistance with decreasing temperatures were observed concurrently with the magnetic anomalies. Positive-negative magnetoresistance crossovers were observed at the Curie temperature, which seem only to appear when the sheet resistance exceeds the Mott-Ioffe-Regel limit h/e2. Finally, a two-stage gap-opening process due to magnetic proximity is proposed.},
doi = {10.1103/physrevb.98.081403},
journal = {Physical Review B},
number = 8,
volume = 98,
place = {United States},
year = {Thu Aug 09 00:00:00 EDT 2018},
month = {Thu Aug 09 00:00:00 EDT 2018}
}

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Works referencing / citing this record:

Evidence for exchange Dirac gap in magnetotransport of topological insulator–magnetic insulator heterostructures
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