Influence of partial charge on the material removal rate during chemical polishing
Abstract
A partial charge-based chemical polishing model has been developed, which can serve as metric for describing the relative polishing material removal rate for different combinations of slurries and workpieces. A series of controlled polishing experiments utilizing a variety of colloidal polishing slurries (SiO2, CeO2, ZrO2, MgO, Sb2O5) and optical materials [single crystals of Al2O3 (sapphire), SiC, Y3Al5O12 (YAG), CaF2, and LiB3O5 (LBO); a SiO2-Al2O3-P2O5-Li2O glass ceramic (Zerodur); and glasses of SiO2:TiO2 (ULE), SiO2 (fused silica), and P2O5-Al2O3-K2O-BaO (Phosphate)] was performed and its material removal rate was measured. As previously proposed by Cook (J Non-Cryst Solids. 1990;120:152), for many polishing systems, the removal rate is governed by a series of chemical reactions which include the formation of a surface hydroxide, followed by condensation of that hydroxyl moiety with the polishing particle, and a subsequent hydrolysis reaction. The rate of condensation can often be the rate limiting step, thus it can determine the polishing material removal rate. By largely keeping the numerous other factors that influence material removal rate fixed (such as due to particle size distributions, interface interactions, pad topography, kinematics, and applied pressure), the material removal rate is shown to scale exponentially with the partial charge difference (δwp-s) between themore »
- Authors:
-
- Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States)
- Creighton Univ., Omaha, NE (United States)
- Publication Date:
- Research Org.:
- Lawrence Livermore National Laboratory (LLNL), Livermore, CA (United States)
- Sponsoring Org.:
- USDOE National Nuclear Security Administration (NNSA)
- OSTI Identifier:
- 1755833
- Alternate Identifier(s):
- OSTI ID: 1468661
- Report Number(s):
- LLNL-JRNL-746065
Journal ID: ISSN 0002-7820; 900931
- Grant/Contract Number:
- AC52-07NA27344
- Resource Type:
- Accepted Manuscript
- Journal Name:
- Journal of the American Ceramic Society
- Additional Journal Information:
- Journal Volume: 102; Journal Issue: 4; Journal ID: ISSN 0002-7820
- Publisher:
- American Ceramic Society
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE; materials science; lasers
Citation Formats
Suratwala, Tayyab, Steele, Rusty, Miller, Philip E., Wong, Lana, Destino, Joel F., Feigenbaum, Eyal, Shen, Nan, and Feit, Michael. Influence of partial charge on the material removal rate during chemical polishing. United States: N. p., 2018.
Web. doi:10.1111/jace.15995.
Suratwala, Tayyab, Steele, Rusty, Miller, Philip E., Wong, Lana, Destino, Joel F., Feigenbaum, Eyal, Shen, Nan, & Feit, Michael. Influence of partial charge on the material removal rate during chemical polishing. United States. https://doi.org/10.1111/jace.15995
Suratwala, Tayyab, Steele, Rusty, Miller, Philip E., Wong, Lana, Destino, Joel F., Feigenbaum, Eyal, Shen, Nan, and Feit, Michael. Wed .
"Influence of partial charge on the material removal rate during chemical polishing". United States. https://doi.org/10.1111/jace.15995. https://www.osti.gov/servlets/purl/1755833.
@article{osti_1755833,
title = {Influence of partial charge on the material removal rate during chemical polishing},
author = {Suratwala, Tayyab and Steele, Rusty and Miller, Philip E. and Wong, Lana and Destino, Joel F. and Feigenbaum, Eyal and Shen, Nan and Feit, Michael},
abstractNote = {A partial charge-based chemical polishing model has been developed, which can serve as metric for describing the relative polishing material removal rate for different combinations of slurries and workpieces. A series of controlled polishing experiments utilizing a variety of colloidal polishing slurries (SiO2, CeO2, ZrO2, MgO, Sb2O5) and optical materials [single crystals of Al2O3 (sapphire), SiC, Y3Al5O12 (YAG), CaF2, and LiB3O5 (LBO); a SiO2-Al2O3-P2O5-Li2O glass ceramic (Zerodur); and glasses of SiO2:TiO2 (ULE), SiO2 (fused silica), and P2O5-Al2O3-K2O-BaO (Phosphate)] was performed and its material removal rate was measured. As previously proposed by Cook (J Non-Cryst Solids. 1990;120:152), for many polishing systems, the removal rate is governed by a series of chemical reactions which include the formation of a surface hydroxide, followed by condensation of that hydroxyl moiety with the polishing particle, and a subsequent hydrolysis reaction. The rate of condensation can often be the rate limiting step, thus it can determine the polishing material removal rate. By largely keeping the numerous other factors that influence material removal rate fixed (such as due to particle size distributions, interface interactions, pad topography, kinematics, and applied pressure), the material removal rate is shown to scale exponentially with the partial charge difference (δwp-s) between the workpiece and polishing slurry particle for many of the slurry-workpiece combinations indicating that condensation rate is the rate limiting step. The partial charge (δ) describes the equilibrium distribution of electron density between chemically bonded atoms and is related to the electronegativity of the atoms chemically bonded to one another. This partial charge model also explains the age-old experimental finding of why cerium oxide is the most effective polishing slurry for chemical removal of many workpieces. Finally, some of the slurry-workpiece combinations that did not follow the partial charge dependence offer insight to other removal mechanisms or rate limiting reaction pathways.},
doi = {10.1111/jace.15995},
journal = {Journal of the American Ceramic Society},
number = 4,
volume = 102,
place = {United States},
year = {Wed Sep 05 00:00:00 EDT 2018},
month = {Wed Sep 05 00:00:00 EDT 2018}
}
Web of Science
Works referenced in this record:
Adsorption of silica colloids onto like-charged silica surfaces of different roughness
journal, May 2017
- Dylla-Spears, R.; Wong, L.; Shen, N.
- Colloids and Surfaces A: Physicochemical and Engineering Aspects, Vol. 520
The structure of abraded glass surfaces
journal, February 1922
- Preston, F. W.
- Transactions of the Optical Society, Vol. 23, Issue 3
Chemical processes in glass polishing
journal, April 1990
- Cook, Lee M.
- Journal of Non-Crystalline Solids, Vol. 120, Issue 1-3
Surface Chemical Processes in Chemical Mechanical Polishing
journal, January 2002
- Osseo-Asare, K.
- Journal of The Electrochemical Society, Vol. 149, Issue 12
Effect of rogue particles on the sub-surface damage of fused silica during grinding/polishing
journal, April 2008
- Suratwala, T.; Steele, R.; Feit, M. D.
- Journal of Non-Crystalline Solids, Vol. 354, Issue 18
A model for lapping of glass
journal, January 1993
- Buijs, M.; Korpel-van Houten, K.
- Journal of Materials Science, Vol. 28, Issue 11
Feature-Scale Fluid-Based Erosion Modeling for Chemical-Mechanical Polishing
journal, January 1994
- Runnels, Scott R.
- Journal of The Electrochemical Society, Vol. 141, Issue 7
Effects of abrasive size distribution in chemical mechanical planarization: Modeling and verification
journal, August 2003
- Jianfeng Luo, ; Dornfeld, D. A.
- IEEE Transactions on Semiconductor Manufacturing, Vol. 16, Issue 3
Microscopic Removal Function and the Relationship Between Slurry Particle Size Distribution and Workpiece Roughness During Pad Polishing
journal, November 2013
- Suratwala, Tayyab; Feit, Michael; Steele, William
- Journal of the American Ceramic Society, Vol. 97, Issue 1
A fundamental model proposed for material removal in chemical–mechanical polishing
journal, February 2010
- Xin, J.; Cai, W.; Tichy, J. A.
- Wear, Vol. 268, Issue 5-6
Chemical-Mechanical Polishing for Fabricating Patterned W Metal Features as Chip Interconnects
journal, January 1991
- Kaufman, F. B.
- Journal of The Electrochemical Society, Vol. 138, Issue 11
Mechanism and Simulation of Removal Rate and Surface Roughness During Optical Polishing of Glasses
journal, March 2016
- Suratwala, Tayyab; Steele, William; Feit, Michael
- Journal of the American Ceramic Society, Vol. 99, Issue 6
Material removal mechanism in chemical mechanical polishing: theory and modeling
journal, May 2001
- Jianfeng Luo, ; Dornfeld, D. A.
- IEEE Transactions on Semiconductor Manufacturing, Vol. 14, Issue 2
The Basic Mechanism of Glass Polishing
journal, January 2000
- Kaller, A.
- Naturwissenschaften, Vol. 87, Issue 1
Nanoscratching of Optical Glass Surfaces Near the Elastic–Plastic Load Boundary to Mimic the Mechanics of Polishing Particles
journal, January 2016
- Shen, Nan; Suratwala, Tayyab; Steele, William
- Journal of the American Ceramic Society, Vol. 99, Issue 5
Simultaneous Temperature Measurement of Wafers in Chemical Mechanical Polishing of Silicon Dioxide Layer
journal, December 1995
- Sugimoto, Fumitoshi; Arimoto, Yoshihiro; Ito, Takashi
- Japanese Journal of Applied Physics, Vol. 34, Issue Part 1, No. 12A
Thermodynamic evaluation of a partial charge model assumptionfor the dissolved silica system
journal, February 2007
- Reynolds, Jacob G.
- Silicon Chemistry, Vol. 3, Issue 5
Mechanism of polishing of SiO2 films by CeO2 particles
journal, May 2001
- Hoshino, Tetsuya; Kurata, Yasushi; Terasaki, Yuuki
- Journal of Non-Crystalline Solids, Vol. 283, Issue 1-3
A chemical mechanical polishing model based on the viscous flow of the amorphous layer
journal, September 2008
- Jiang, Jian-Zhong; Zhao, Yong-Wu; Wang, Yong-Guang
- Wear, Vol. 265, Issue 7-8
Relationship between surface μ‐roughness and interface slurry particle spatial distribution during glass polishing
journal, April 2017
- Suratwala, Tayyab; Steele, William; Feit, Michael
- Journal of the American Ceramic Society, Vol. 100, Issue 7
Kinematic Analysis and Measurement of Temperature Rise on a Pad in Chemical Mechanical Planarization
journal, January 1999
- Hocheng, Hong
- Journal of The Electrochemical Society, Vol. 146, Issue 11
Convergent Pad Polishing of Amorphous Silica
journal, February 2012
- Suratwala, Tayyab; Steele, Rusty; Feit, Michael
- International Journal of Applied Glass Science, Vol. 3, Issue 1
Sol-gel chemistry of transition metal oxides
journal, January 1988
- Livage, J.; Henry, M.; Sanchez, C.
- Progress in Solid State Chemistry, Vol. 18, Issue 4
Effect of Rogue Particles on the Sub-Surface Damage of Fused Silica during Grinding/Polishing
conference, January 2006
- Suratwala, Tayyab; Steele, R.; Feit, M. D.
- Optical Fabrication and Testing, Frontiers in Optics