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Title: Direct-to-indirect electronic state transition in dynamically compressed GaAs quantum wells

Journal Article · · Applied Physics Letters
DOI: https://doi.org/10.1063/1.5038723 · OSTI ID:1468524
 [1];  [2]; ORCiD logo [1]
  1. Institute for Shock Physics and Department of Physics, Washington State University, Pullman, Washington 99164, USA
  2. National Renewable Energy Laboratory, 1617 Cole Blvd., Golden, Colorado 80401, USA
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Dynamic compression of GaAs quantum wells was achieved to examine the direct-to-indirect transition in a reduced dimension semiconductor structure under uniaxial strain conditions. Our results show that the transformation deviates significantly from the electronic structure predictions using bulk deformation potentials. This finding is attributed to the suppression of real-space type-II transitions by quantum state interactions due to the presence of large anisotropic strains.

Research Organization:
National Renewable Energy Laboratory (NREL), Golden, CO (United States)
Sponsoring Organization:
USDOE Office of Energy Efficiency and Renewable Energy (EERE), Solar Energy Technologies Office (EE-4S)
Grant/Contract Number:
AC36-08GO28308
OSTI ID:
1468524
Alternate ID(s):
OSTI ID: 1512622; OSTI ID: 1464316; OSTI ID: 1476907; OSTI ID: 1476912
Report Number(s):
NREL/JA-5J00-71420
Journal Information:
Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 7 Vol. 113; ISSN 0003-6951
Publisher:
American Institute of Physics (AIP)Copyright Statement
Country of Publication:
United States
Language:
English

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71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
electronic structure
gallium arsenide
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quantum theory
semiconducting gallium
semiconducting gallium arsenide
strain