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Title: Incorporation of indium on cubic GaN epitaxially induced on a nanofaceted Si(001) substrate by phase transition

Here, the incorporation of In on the non-polar, piezoelectric-free (001) facet of cubic (c-) GaN epitaxially grown over a Si(001) substrate by metal-organic vapor phase epitaxy is reported. Relying on a hexagonal (h-) to c-phase transformation during epitaxy on an 800 nm-wide, Si(111)-faceted v-groove patterned into the substrate, the GaN epilayer at cross sectional view retains a triangular c-phase inside a chevron-shaped h-phase that results in a top surface bounded by a (001) facet parallel to Si(001) at the center and (11¯01) facets at both edges. A stack of five, ~3 nm-thick, In xGa 1–xN/GaN quantum wells (QWs) was deposited on the double-phased top surface. The c-phase region up to the QWs keeps extremely small misfit (~0.002) to the fully relaxed h-GaN underneath it and is in tensile stress implying undefected by the h-c phase interface. Lastly, the In incorporation on a strained non-polar (001) of c-GaN is comparable with that on totally relaxed semi-polar (11¯01) of h-GaN without noticeable adatom migration across the phase boundary, and sufficient to provide the room-temperature green emission at 496 nm from the c-In xGa 1–xN/GaN QWs on Si(001) in photoluminescence.
Authors:
 [1] ;  [1] ;  [1] ;  [1] ;  [2] ;  [2] ; ORCiD logo [2] ;  [1]
  1. Univ. of New Mexico, Albuquerque, NM (United States)
  2. Rensselaer Polytechnic Inst., Troy, NY (United States)
Publication Date:
Grant/Contract Number:
EE0000627
Type:
Accepted Manuscript
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 107; Journal Issue: 23; Journal ID: ISSN 0003-6951
Publisher:
American Institute of Physics (AIP)
Research Org:
Rensselaer Polytechnic Inst., Troy, NY (United States)
Sponsoring Org:
USDOE Office of Energy Efficiency and Renewable Energy (EERE)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE
OSTI Identifier:
1468467
Alternate Identifier(s):
OSTI ID: 1228438

Lee, S. C., Youngblood, N., Jiang, Y. B., Peterson, E. J., Stark, C. J. M., Detchprohm, T., Wetzel, C., and Brueck, S. R. J.. Incorporation of indium on cubic GaN epitaxially induced on a nanofaceted Si(001) substrate by phase transition. United States: N. p., Web. doi:10.1063/1.4936772.
Lee, S. C., Youngblood, N., Jiang, Y. B., Peterson, E. J., Stark, C. J. M., Detchprohm, T., Wetzel, C., & Brueck, S. R. J.. Incorporation of indium on cubic GaN epitaxially induced on a nanofaceted Si(001) substrate by phase transition. United States. doi:10.1063/1.4936772.
Lee, S. C., Youngblood, N., Jiang, Y. B., Peterson, E. J., Stark, C. J. M., Detchprohm, T., Wetzel, C., and Brueck, S. R. J.. 2015. "Incorporation of indium on cubic GaN epitaxially induced on a nanofaceted Si(001) substrate by phase transition". United States. doi:10.1063/1.4936772. https://www.osti.gov/servlets/purl/1468467.
@article{osti_1468467,
title = {Incorporation of indium on cubic GaN epitaxially induced on a nanofaceted Si(001) substrate by phase transition},
author = {Lee, S. C. and Youngblood, N. and Jiang, Y. B. and Peterson, E. J. and Stark, C. J. M. and Detchprohm, T. and Wetzel, C. and Brueck, S. R. J.},
abstractNote = {Here, the incorporation of In on the non-polar, piezoelectric-free (001) facet of cubic (c-) GaN epitaxially grown over a Si(001) substrate by metal-organic vapor phase epitaxy is reported. Relying on a hexagonal (h-) to c-phase transformation during epitaxy on an 800 nm-wide, Si(111)-faceted v-groove patterned into the substrate, the GaN epilayer at cross sectional view retains a triangular c-phase inside a chevron-shaped h-phase that results in a top surface bounded by a (001) facet parallel to Si(001) at the center and (11¯01) facets at both edges. A stack of five, ~3 nm-thick, InxGa1–xN/GaN quantum wells (QWs) was deposited on the double-phased top surface. The c-phase region up to the QWs keeps extremely small misfit (~0.002) to the fully relaxed h-GaN underneath it and is in tensile stress implying undefected by the h-c phase interface. Lastly, the In incorporation on a strained non-polar (001) of c-GaN is comparable with that on totally relaxed semi-polar (11¯01) of h-GaN without noticeable adatom migration across the phase boundary, and sufficient to provide the room-temperature green emission at 496 nm from the c-InxGa1–xN/GaN QWs on Si(001) in photoluminescence.},
doi = {10.1063/1.4936772},
journal = {Applied Physics Letters},
number = 23,
volume = 107,
place = {United States},
year = {2015},
month = {12}
}