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Title: Metal-to-Semiconductor Transition and Electronic Dimensionality Reduction of Ca 2 N Electride under Pressure

Authors:
ORCiD logo [1] ;  [1] ;  [2] ;  [3] ;  [2] ;  [2] ;  [4] ;  [2] ;  [5] ;  [4] ;  [4] ;  [2] ; ORCiD logo [6] ;  [7] ;  [8] ;  [3]
  1. Center for High Pressure Science and Technology Advanced Research, Beijing 100094 China, Key Laboratory of Metastable Materials Science and Technology, College of Material Science and Engineering, Yanshan University, Qinhuangdao 066004 China
  2. Center for High Pressure Science and Technology Advanced Research, Beijing 100094 China
  3. Materials Research Center for Element Strategy, Tokyo Institute of Technology, 4259 Nagatsuta-cho, Midori-ku Yokohama Kanagawa 226-8503 Japan, Laboratory for Materials and Structures, Institute of Innovative Research, Tokyo Institute of Technology, Mailbox R3-4, 4259 Nagatsuta-cho, Midori-ku Yokohama 226-8503 Japan
  4. Key Laboratory of Metastable Materials Science and Technology, College of Material Science and Engineering, Yanshan University, Qinhuangdao 066004 China
  5. Hawai'i Institute of Geophysics and Planetology, School of Ocean and Earth Science and Technology, University of Hawai'i at Manoa, Honolulu Hawaii 96822 USA
  6. Center for High Pressure Science and Technology Advanced Research, Beijing 100094 China, Key Laboratory of Applied Chemistry, College of Environmental and Chemical Engineering, Yanshan University, Qinhuangdao 066004 China
  7. Key Laboratory of Applied Chemistry, College of Environmental and Chemical Engineering, Yanshan University, Qinhuangdao 066004 China
  8. Center for High Pressure Science and Technology Advanced Research, Beijing 100094 China, Geophysical Laboratory, Carnegie Institution of Washington, 5251 Broad Branch Road NW Washington DC 20015 USA
Publication Date:
Grant/Contract Number:
AC02-06CH11357
Type:
Published Article
Journal Name:
Advanced Science
Additional Journal Information:
Journal Name: Advanced Science Journal Volume: 5 Journal Issue: 11; Journal ID: ISSN 2198-3844
Publisher:
Wiley Blackwell (John Wiley & Sons)
Sponsoring Org:
USDOE
Country of Publication:
Germany
Language:
English
OSTI Identifier:
1468359
Alternate Identifier(s):
OSTI ID: 1468360

Tang, Hu, Wan, Biao, Gao, Bo, Muraba, Yoshinori, Qin, Qin, Yan, Bingmin, Chen, Peng, Hu, Qingyang, Zhang, Dongzhou, Wu, Lailei, Wang, Mingzhi, Xiao, Hong, Gou, Huiyang, Gao, Faming, Mao, Ho-kwang, and Hosono, Hideo. Metal-to-Semiconductor Transition and Electronic Dimensionality Reduction of Ca 2 N Electride under Pressure. Germany: N. p., Web. doi:10.1002/advs.201800666.
Tang, Hu, Wan, Biao, Gao, Bo, Muraba, Yoshinori, Qin, Qin, Yan, Bingmin, Chen, Peng, Hu, Qingyang, Zhang, Dongzhou, Wu, Lailei, Wang, Mingzhi, Xiao, Hong, Gou, Huiyang, Gao, Faming, Mao, Ho-kwang, & Hosono, Hideo. Metal-to-Semiconductor Transition and Electronic Dimensionality Reduction of Ca 2 N Electride under Pressure. Germany. doi:10.1002/advs.201800666.
Tang, Hu, Wan, Biao, Gao, Bo, Muraba, Yoshinori, Qin, Qin, Yan, Bingmin, Chen, Peng, Hu, Qingyang, Zhang, Dongzhou, Wu, Lailei, Wang, Mingzhi, Xiao, Hong, Gou, Huiyang, Gao, Faming, Mao, Ho-kwang, and Hosono, Hideo. 2018. "Metal-to-Semiconductor Transition and Electronic Dimensionality Reduction of Ca 2 N Electride under Pressure". Germany. doi:10.1002/advs.201800666.
@article{osti_1468359,
title = {Metal-to-Semiconductor Transition and Electronic Dimensionality Reduction of Ca 2 N Electride under Pressure},
author = {Tang, Hu and Wan, Biao and Gao, Bo and Muraba, Yoshinori and Qin, Qin and Yan, Bingmin and Chen, Peng and Hu, Qingyang and Zhang, Dongzhou and Wu, Lailei and Wang, Mingzhi and Xiao, Hong and Gou, Huiyang and Gao, Faming and Mao, Ho-kwang and Hosono, Hideo},
abstractNote = {},
doi = {10.1002/advs.201800666},
journal = {Advanced Science},
number = 11,
volume = 5,
place = {Germany},
year = {2018},
month = {9}
}

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Efficient iterative schemes for ab initio total-energy calculations using a plane-wave basis set
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